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Gallium-oxide-based high-power light-operated microwave device

A microwave device and gallium oxide technology, applied in the field of microelectronics, can solve the problems of small device size and power that cannot meet the needs of high-power devices, and achieve the effects of cost saving, high power, and overcoming the high background carrier concentration

Pending Publication Date: 2021-08-06
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Existing optically controlled microwave devices are generally made of gallium nitride and silicon carbide. The size of the device is small, and its power cannot meet the existing demand for high-power devices.

Method used

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  • Gallium-oxide-based high-power light-operated microwave device
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  • Gallium-oxide-based high-power light-operated microwave device

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Embodiment 1

[0029] See figure 1 , figure 1 It is a schematic cross-sectional structure diagram of a gallium oxide-based high-power optically controlled microwave device provided by an embodiment of the present invention. As shown in the figure, the gallium oxide-based high-power optically controlled microwave device of this embodiment includes: a substrate layer 1 and an anode 2 and a cathode 3 correspondingly arranged on the upper and lower surfaces of the substrate layer 1, wherein the substrate layer 1 is doped + Gallium oxide material with divalent ions.

[0030] Specifically, the substrate layer 1 is Fe-doped gallium oxide material or Mg-doped gallium oxide material. In this embodiment, effective compensation is achieved by doping +2 valent ions (Fe or Mg) in gallium oxide, which overcomes the defect of high carrier concentration in the background of gallium oxide material. Due to Ga 2 o 3 Defects such as oxygen ion vacancies, Ga vacancies, or interstitial atoms are easily gener...

Embodiment 2

[0038] This embodiment specifically introduces the preparation method of the gallium oxide-based high-power optically controlled microwave device in the first embodiment.

[0039] Such as figure 1 The preparation process of the gallium oxide-based high-power optically controlled microwave device with both the anode 2 and the cathode 3 having a ring structure is as follows, wherein the ring structure electrodes of the anode 2 and the cathode 3 have an outer diameter of 8mm and an inner diameter of 5mm, The thickness of the electrode is 100nm, and the size of the substrate layer 1 is 14mm×14mm×0.5mm.

[0040] Step 1: polishing the substrate layer 1;

[0041] The doping concentration of Fe is 1.6×10 17 cm -3 The gallium oxide wafer was chemically and mechanically polished on both sides to obtain a gallium oxide crystal with a flat and smooth surface and a size of 14mm×14mm×0.5mm.

[0042] The polished gallium oxide wafer surface can form good contact with the electrodes (cath...

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Abstract

The invention relates to a gallium-oxide-based high-power light-operated microwave device which comprises a substrate layer, an anode and a cathode, wherein the anode and the cathode are correspondingly arranged on the upper surface and the lower surface of the substrate layer, and the substrate layer is made of a gallium oxide material doped with +2 valence ions. According to the gallium-oxide-based high-power light-operated microwave device, microwave output is achieved through the light-operated gallium oxide photoconductive switch, the huge switch ratio of light current to dark current of the device is achieved, the power can be improved by three orders of magnitude and reaches the megawatt magnitude, and high-power light-operated microwave output is achieved.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a gallium oxide-based high-power light-controlled microwave device. Background technique [0002] The solid-state microwave source uses the gate-controlled switch of the field-effect transistor FET to realize the microwave output. The output power is limited by the size of the FET, and the power can reach the kilowatt level at the highest level, and the switching response frequency is low. Therefore, an optical control microwave devices. [0003] Light-controlled microwave device is a new type of semiconductor light-controlled switch electronic device. It is a more in-depth study of photoconductive switches. Its development background is the rapid development of microelectronics technology and microwave technology. The photoconductive switch uses the photoelectric effect of the semiconductor to control the on-off function of the circuit. When the light irrad...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L31/0224H01L31/09
CPCH01L31/0321H01L31/0224H01L31/09
Inventor 陆小力马晓华侯斌王志成郑雪峰何云龙郝跃
Owner XIDIAN UNIV
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