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Anti-radiation SOI device and manufacturing method thereof

An anti-radiation and device technology, applied in the fields of semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of limiting the life and reliability of SOI integrated circuits, improve the anti-single event effect, and avoid the latch-up effect. , the effect of reducing the impact

Active Publication Date: 2021-08-17
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existence of the total dose effect severely limits the lifetime and reliability of SOI integrated circuits in radiation environments

Method used

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  • Anti-radiation SOI device and manufacturing method thereof
  • Anti-radiation SOI device and manufacturing method thereof
  • Anti-radiation SOI device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Such as figure 1 Shown is the radiation-resistant SOI device structure of Embodiment 1 of the present invention, including pLDMOS tube (101), nLDMOS tube (102), pMOS tube (103), nMOS tube (104), LIGBT tube (105); these 5 Devices are all formed on the same SOI substrate (comprising top layer silicon 16, buried oxide layer 8 and P-type substrate 9), and isolation is carried out between adjacent devices; 14) It is composed of polycrystalline (15) filled with the isolation groove, and the isolation groove and the buried oxide layer (8) work together to cut off the electrical connection between the devices and avoid the negative impact caused by the leakage between the devices;

[0044] The pLDMOS transistor (101) includes: a P-type well region (1), an N-type well region (2) and a P-type drift region (3) formed by ion implantation and diffusion on the top layer silicon (16), and the P-type well region ( 1) The surface has a heavily doped P-type contact region (12) formed b...

Embodiment 2

[0050] Such as figure 2 Shown is the radiation resistant SOI device structure of Embodiment 2 of the present invention. On the basis of the device of Embodiment 1, a drain (collector) field plate 18 is set in the pLDMOS tube (101), nLDMOS tube (102) and LIGBT tube (105), and the drain (collector) field plate 18 Contact with the pLDMOS drain electrode (32), nLDMOS drain electrode (35), LIGBT collector (44), the drain (collector) field plate 18 is away from the drain electrode (collector) side below the field oxide layer; the said The material of the drain (collector) field plate 18 is polysilicon.

Embodiment 3

[0052] Such as image 3 Shown is the radiation resistant SOI device structure of Embodiment 3 of the present invention. The thickness of the field oxide layer in the pLDMOS tube (101), nLDMOS tube (102) and LIGBT tube (105) is less than 500nm (such as 200nm, 300nm) or the quality is higher after radiation resistance reinforcement ("higher quality" means Due to the improvement of the manufacturing process, such as silicon injection into the oxide layer, nitrogen injection and other technologies, under the same radiation conditions, the positive charge density generated by the field oxide layer becomes smaller), the field oxide layer (7) can be extended to the drain electrode (Collector) is tangent and becomes a complete field oxygen.

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Abstract

The invention discloses an anti-radiation SOI device and a manufacturing method, and belongs to the technical field of semiconductor manufacturing. According to the anti-radiation SOI device, the structure of the buried oxide layer and the isolation groove is adopted, full isolation between devices is achieved, the latch-up effect caused by a parasitic P-N-P-N structure is avoided, and the single event effect and transient dose rate effect resisting capacity of a circuit is improved. The high-concentration buried layer is arranged at the bottom of the well region, so that the influence of the positive charges of the buried oxide layer on the back trench characteristics of the device is weakened, the opening of the back trench and the breakdown of the back gate can be inhibited, and the total dose effect resistance of the device is improved. The area of the field oxide layer is reduced by part of the field oxide structure, so that the total amount of positive charges generated by the total dose effect in the field oxide layer is reduced, and the influence of the total dose effect on the device is reduced.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a radiation-resistant SOI device and a manufacturing method. Background technique [0002] Compared with traditional bulk silicon integrated circuits, integrated circuits based on SOI (Silicon On Insulator, silicon on insulator) technology have lower power consumption and higher switching speed. After isolation, the junction capacitance between the source and drain of the device and the substrate is greatly reduced. The SOI integrated circuit can realize full isolation between devices, eliminating the latch-up effect (Latch-up Effect) in bulk silicon CMOS (Complementary Metal Oxide Semiconductor, Complementary Metal Oxide Semiconductor) devices. SOI integrated circuits use groove isolation, which is much smaller than the junction isolation in bulk silicon integrated circuits, and is very suitable for making highly integrated and miniaturized circu...

Claims

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Application Information

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IPC IPC(8): H01L27/12H01L23/552H01L21/84
CPCH01L27/1203H01L23/552H01L21/84
Inventor 乔明冯廓周锌贺雅娟张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA