Infrared detector sensitive element based on nanometer infrared absorption layer and preparation method thereof

An infrared absorbing layer and infrared detector technology, applied in the field of infrared detectors, can solve problems such as complex processing technology, high cost, and difficult control of crystal thickness, and achieve the effect of simple processing technology, low cost, and improved thermal response performance

Pending Publication Date: 2021-08-17
GRIMAT ENG INST CO LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

In recent years, the selected single crystal pyroelectric materials mostly adopt the hybrid integration method, the crystal thickness is not easy to control, the processing technology is complicated, and the cost is high

Method used

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  • Infrared detector sensitive element based on nanometer infrared absorption layer and preparation method thereof
  • Infrared detector sensitive element based on nanometer infrared absorption layer and preparation method thereof
  • Infrared detector sensitive element based on nanometer infrared absorption layer and preparation method thereof

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Embodiment

[0030] Such as figure 1 As shown, an infrared detector sensitive element based on a nano-absorbing layer, which includes an infrared-sensitive absorbing layer 1, an upper electrode layer 2, an upper electrode connecting layer 3, a pyroelectric thin layer 4, and a lower electrode connecting layer from top to bottom 5. The lower electrode layer 6 . The infrared sensitive absorbing layer 1 is a nanometer infrared absorbing layer with a small nano-cluster structure, and its thickness is 5 μm. The material of the upper electrode layer 2 is metal Cu film with a thickness of 300nm. The material of the upper electrode connection layer 3 is metal Ti thin film with a thickness of 15 nm. The pyroelectric thin layer 4 is a double-sided polished pyroelectric lithium tantalate crystal sheet with a thickness of 25 μm. The material of the lower electrode connecting layer 5 is Ti metal thin film with a thickness of 15nm. The material of the lower electrode layer 6 is metal A1 film with a t...

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Abstract

The invention discloses an infrared detector sensitive element based on a nanometer infrared absorption layer and a preparation method of the infrared detector sensitive element. The infrared detector sensitive element sequentially comprises an infrared sensitive absorption layer, an upper electrode layer, an upper electrode connecting layer, a pyroelectric thin layer, a lower electrode connecting layer and a lower electrode layer from top to bottom, wherein the infrared sensitive absorption layer is a nanometer infrared absorption layer with a nanometer cluster structure. The preparation method comprises the following steps: sequentially depositing the upper electrode connecting layer and the upper electrode layer on the pyroelectric sheet by adopting a direct current magnetron sputtering or thermal evaporation coating technology; sequentially depositing a lower electrode connecting layer and a lower electrode layer on the reverse side of the pyroelectric crystal sheet; adhering a pyroelectric crystal sheet to a substrate support, and patterning a nano infrared absorbing material by using a spin coating, silk-screen printing or spraying method to prepare an infrared sensitive absorbing layer; and scribing and segmenting the array device by using a mechanical scribing machine or a laser scribing technology to obtain a single infrared detector sensitive element finished product.

Description

technical field [0001] The invention relates to an infrared detector sensitive element based on a nanometer infrared absorption layer and a preparation method thereof, belonging to the technical field of infrared detectors. Background technique [0002] With the development of satellite infrared remote sensing technology, my country's pyroelectric infrared detectors have entered the development stage. Due to its advantages of low price, light weight, wide spectral response, fast response speed and high cost performance, it is widely used in military, industrial, security medical, scientific research and environmental monitoring and other fields, and has become one of the hot spots in the field of infrared technology research. . [0003] For example, in the field of gas detection, compared with traditional methods, infrared gas sensors have the characteristics of uninterrupted measurement, rapid response, no pollution, wide measurement range, detection of various gases, and ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L37/02G01J5/34B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00G01J5/34H10N15/15H10N15/10
Inventor 连紫薇明安杰赵永敏
Owner GRIMAT ENG INST CO LTD
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