Printable p-type doping paste for solar cells or semiconductors and doping method

A technology for solar cells and semiconductors, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of high cost, long process, high energy consumption, etc. The effect of excellent stability

Pending Publication Date: 2021-08-27
TORAY ADVANCED MATERIALS RES LAB CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the disadvantages of long process, high energy consumption, high cost, and difficulty in achieving local heavy doping in the prior art, the present invention provides a doping slurry for diffusion that can reduce diffusion in the gas and process steps, and reduce energy consumption and cost material

Method used

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  • Printable p-type doping paste for solar cells or semiconductors and doping method
  • Printable p-type doping paste for solar cells or semiconductors and doping method
  • Printable p-type doping paste for solar cells or semiconductors and doping method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-1

[0114] Add 122.4g (0.90mol) of methyltrimethoxysilane, 46.5g (0.75mol) of boric acid, and 240g of diethylene glycol monomethyl ether into a 1000mL four-necked flask, and heat up to 70°C and stir After 1 hour, continue to heat up to 100 degrees and stir for 5 hours, and measure the weight average molecular weight (Mw) to be about 4500. The solid content in the polyborosiloxane solution was 42.9%.

Embodiment 1-2

[0116] Add 198.29g (1.00mol) of phenyltrimethoxysilane, 30.90g (0.5mol) of boric acid, 0.92g (0.02mol) of formic acid, 240g of diethylene glycol monomethyl ether into a 1000mL four-necked flask, and flow 1L of nitrogen gas / min, the temperature was raised to 70 degrees and stirred for 1 hour, and the temperature was continued to be raised to 100 degrees and stirred for 5 hours, and the weight average molecular weight (Mw) was measured to be about 7100. The solid content in the obtained polyborosiloxane solution was 47.8%.

Embodiment 1-3

[0118] Add 396.58g (2.00mol) of phenyltrimethoxysilane, 12.36g (0.2mol) of boric acid, 6.05g (0.1mol) of acetic acid, 240g of N-methylpyrrolidone into a 1000mL four-necked flask, and flow nitrogen at a rate of 1L / min , be warmed up to 70 degrees and stirred for 1 hour, continue to be heated to 100 degrees and stirred for 5 hours, and the weight average molecular weight (Mw) is measured to be about 53500. The solid content in the obtained polyborosiloxane solution was 63.1%.

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Abstract

The invention provides printable p-type doped paste for a solar cell or a semiconductor, and the paste is characterized by comprising a dopant A, a hydroxyl-containing polymer B, a thickening agent C and a solvent D. The dopant A contains polyborosiloxane and a small molecular boron compound, the polyborosiloxane is a polymer containing a structural unit as shown in the following formula 1, in the formula 1, R1 and R2 are respectively and independently hydrogen, hydroxyl, alkyl, aryl, alkoxy, aryloxy or acyloxy; R3 is hydrogen, an alkyl group, an aryl group, an acyl group, a silyl group, an alkylsilyl group or an arylsilyl group; R1, R2 and R3 can be the same or different. The p-type doped slurry provided by the invention has excellent stability, continuous printing property, high doping concentration and better barrier property.

Description

technical field [0001] The invention relates to a printing doping paste for solar cells and semiconductors. Specifically, it relates to the composition of doping paste for printing and the doping method of semiconductor unit using this material. Background technique [0002] In the conventional manufacture of semiconductors or solar cells, in the case of forming a p-type or n-type impurity diffusion layer or local doping in a semiconductor substrate, methods using gas dopants or doping pastes have been proposed. However, when using the aforementioned gas dopant or existing dopant paste for high-temperature thermal diffusion, patterning, local diffusion, or single-sided diffusion, in order to prevent contamination of the non-diffusion surface, it is necessary to pre-diffusion the non-diffusion surface. The diffusion area forms a mask, and the mask is removed after diffusion, resulting in a lengthy and complicated process (document [1]). Especially for the double-sided batte...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/48H01L51/42C09D11/03C09D11/102C09D11/106C09D11/30C09D11/38
CPCC09D11/102C09D11/106C09D11/03C09D11/30C09D11/38H10K71/135H10K71/15H10K30/10Y02E10/549
Inventor 李平徐芳荣池田武史
Owner TORAY ADVANCED MATERIALS RES LAB CHINA
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