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Ultraviolet positive photoresist based on hexaaryl biimidazole molecular switch and use method

A positive photoresist, molecular switch technology, applied in optics, opto-mechanical equipment, photoplate making process of patterned surface, etc., can solve the problems of high research and development cost, single photoresist structure, difficult to modify, etc. High-rate, light-responsive effect

Pending Publication Date: 2021-09-03
湖北高碳光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the defects of the prior art, the object of the present invention is to provide a UV positive photoresist based on a hexaarylbiimidazole molecular switch and its use method, aiming to solve the problem that the photoresist structure in the prior art is single and difficult to modify, and it is not easy to The problem of optimization and adjustment in the later stage and generally high R&D costs

Method used

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  • Ultraviolet positive photoresist based on hexaaryl biimidazole molecular switch and use method
  • Ultraviolet positive photoresist based on hexaaryl biimidazole molecular switch and use method
  • Ultraviolet positive photoresist based on hexaaryl biimidazole molecular switch and use method

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preparation example Construction

[0062] For oligomer diols that are liquid at room temperature, the preparation method of the corresponding glue A includes the following steps: under light-shielding conditions and an inert gas protection environment, combine a hexaarylbiimidazole molecular switch crosslinking agent with a free radical The organic solution of the quenching agent is mixed with the organic solution of oligomer glycol to obtain glue A. In some embodiments, the organic solvent used in the organic solution is anhydrous ethyl acetate.

[0063] For the oligomer glycol that is solid under normal temperature, the preparation method of its corresponding A glue comprises the steps:

[0064] S1: Under light-shielding conditions and an inert gas protection environment, heat, melt, and dehydrate the oligomer diol at a temperature not higher than 80°C, then add an organic solvent to dissolve and stir, and cool to room temperature for later use;

[0065] S2: Under light-shielding conditions and an inert gas ...

Embodiment 1

[0076] PTMG with a molecular weight of 1000 1000 It is an oligomer diol, HDI is a diisocyanate, and four-hydroxy functionalized hexaaryl biimidazole crosslinker molecule (4-diol-HABI) is used as a raw material to synthesize a positive-active polyurethane based on a hexaaryl biimidazole molecular switch. photoresist material. The molecular structure of the 4-diol-HABI crosslinking agent is shown in formula (eight).

[0077]

[0078] figure 1 It is a technical roadmap for synthesizing a polyurethane positive photoresist material based on a hexaarylbiimidazole molecular switch using 4-diol-HABI crosslinker molecules as photoresponsive units in Example 1.

[0079] Weigh PTMG 1000 (0.57g; 0.57mmol) was vacuum-dried at 70°C for about 1h until no bubbles were generated, then cooled to room temperature, and dissolved by adding 1mL of anhydrous ethyl acetate; weighed 4-diol-HABI molecule (156.4mg, 0.203mmol) and the free radical quenching substance hexaarylbiimidazole (HABI) (23...

Embodiment 2

[0082] PEG with a molecular weight of 400 400 It is an oligomer diol, MDI is a diisocyanate, and a trihydroxyl-functionalized hexaarylbiimidazole crosslinker molecule (3-diol-HABI) is used as a raw material to synthesize a positive-active polyurethane based on a hexaarylbiimidazole molecular switch. photoresist material. The molecular structure of the 3-diol-HABI crosslinking agent is shown in formula (9).

[0083]

[0084] Weigh PEG 400 (0.213g; 0.533mmol) was vacuum-dried at 70°C for about 1h until no bubbles were generated, then cooled to room temperature, and dissolved by adding 1mL of anhydrous ethyl acetate; weighed 3-diol-HABI molecule (150.3mg, 0.203mmol) and the free radical quenching substance hexaarylbiimidazole (HABI) (239.6mg, 0.406mmol) were dissolved with 4mL of anhydrous ethyl acetate, and then injected into the PEG dry spare double port with a 5mL syringe In the round bottom flask, continue to evacuate and stir evenly; obtain glue A; the above-mentioned ...

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Abstract

The invention belongs to the technical field of microelectronic processing materials, and more specifically relates to an ultraviolet positive photoresist based on a hexaaryl biimidazole molecular switch and a use method thereof. The ultraviolet positive photoresist comprises an adhesive A containing oligomer dihydric alcohol, a functionalized hexaaryl biimidazole molecular switch cross-linking agent and a free radical quenching agent, and an adhesive B containing a catalyst and diisocyanate. When the photoresist is used for photoetching, the photoresist polymer is exposed under ultraviolet irradiation, a dynamic C-N covalent bond between two imidazole rings in a hexaarylbiimidazole (HABI) unit is cracked in response to illumination, and a high-molecular polymer containing the dynamic HABI unit is depolymerized to form an oligomer; and the free radical quenching agent is used for ensuring that the photoresist cannot be spontaneously recovered after the photoresist is exposed and depolymerized to form the oligomer, so that the oligomer formed at the exposed part of the photoresist can be dissolved in a developing solution, the unexposed part cannot be dissolved by the developing solution, and a positive pattern with high resolution is obtained after developing.

Description

technical field [0001] The invention belongs to the technical field of microelectronic processing materials, and more specifically relates to an ultraviolet positive photoresist based on a hexaarylbiimidazole molecular switch and a use method thereof. Background technique [0002] Photoresist is the material with the highest technical barriers among electronic chemicals. It has the characteristics of high purity requirements, complex production process, large initial investment, and long technology accumulation period. It is a capital-technology intensive industry. Photoresist is mainly used in the processing and production of micro-graphic circuits in the optoelectronic information industry, and is a key upstream material for printed circuit boards (PCBs), liquid crystal displays (LCDs) and semiconductor industry chains. [0003] Photolithography has increased resolution by continually shortening the wavelength of the light source used. Currently, deep ultraviolet lithogra...

Claims

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Application Information

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IPC IPC(8): G03F7/039
CPCG03F7/039
Inventor 朱明强向诗力李冲
Owner 湖北高碳光电科技有限公司
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