Double-crucible evaporation source

Abstract

The invention discloses a double-crucible evaporation source, which is characterized in that the flange assembly of the double-crucible evaporation source comprises a vacuum flange and electrodes, the water cooling assembly comprises two water cooling pipes and a water cooling table fixedly connected to the top ends of the two water cooling pipes, the crucible assembly is fixedly installed on the top of the water cooling table and comprises a crucible partition plate fixedly connected to the water cooling table, crucible tables fixedly connected to the two sides of the crucible partition plate, crucible table caps fixedly installed on the crucible tables, crucibles arranged in the crucible tables and crucible covers fixedly connected to the crucible partition plate, the heating units of the crucibles are electrically connected with the electrodes, one heating unit is a resistance type heating unit, the other heating unit is an electron beam heating unit, and the shutter assembly comprises a magnetic coupling rotator, a long rod and a shutter. According to the double-crucible evaporation source, two heating modes of resistance type heating and electron beam heating can be set at the same time, and the evaporation source does not need to be replaced frequently.

Description

technical field [0001] The invention relates to the field of molecular beam epitaxy film formation, in particular to a double crucible evaporation source. Background technique [0002] Molecular beam epitaxy is a method of epitaxially growing single crystal thin films, specifically by sublimating a solid material source and depositing it on a target to form a single crystal thin film. This method is widely used in the manufacture of semiconductor devices and is considered to be the One of the fundamental tools for the development of nanotechnology. [0003] In the existing molecular beam epitaxy equipment, the evaporation sources of different materials are connected to the equipment through CF (Conflat Flang) flanges, and the interior is an ultra-high vacuum environment. The molecular beam epitaxy growth process needs to be carried out in high vacuum or even ultra-high vacuum, and the cost of maintaining vacuum is high, so installing as many material sources as possible can...

AI Technical Summary

Problems solved by technology

Resistive heating refers to passing current through the resistance wire to heat the material in the crucible and sublimate the material. The advantage of this heating method is that it is stable and easy to control. Refractory metals at 1000°C are impotent

Electron beam heating refers to the use of electron beams to directly heat the evaporation material. This method is suitable for high melting point materials. It has the advantages of high heating efficiency and high purity of the resulting film, but it is more difficult to control than resistive heating and the equipment is easily damaged.

When molecular beam epitaxy equipment is used in the actual production process, people will choose different heating methods according to the materials used, and the existing evaporation source only supports one heating method, which leads to the problem of frequent replacement of evaporation sources

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