Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Insulated gate bipolar transistor and preparation method thereof

A technology of bipolar transistors and insulated gates, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of device withstand voltage and conduction voltage drop, and achieve obvious blocking effect, blocking Effect of long distance and high pressure resistance

Pending Publication Date: 2021-09-28
GUANGDONG MIDEA WHITE HOME APPLIANCE TECH INNOVATION CENT CO LTD +1
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The application provides an insulated gate bipolar transistor and its preparation method to solve the technical problem of difficult compromise between device withstand voltage and conduction voltage drop

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Insulated gate bipolar transistor and preparation method thereof
  • Insulated gate bipolar transistor and preparation method thereof
  • Insulated gate bipolar transistor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] The following will clearly and completely describe the technical solutions in the embodiments of the present application with reference to the accompanying drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of them. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

[0029] see figure 1 , an embodiment of the present application discloses a method for manufacturing an insulated gate bipolar transistor, comprising the following steps:

[0030] S11: Provide a substrate single crystal.

[0031] A substrate single crystal is provided. The substrate single crystal is a common semiconductor material, which is periodically arranged in three-dimensional space, and the periodic arrangement of atoms in the crystal form...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an insulated gate bipolar transistor and a preparation method thereof. The preparation method of the insulated gate bipolar transistor comprises the steps that a substrate single crystal is provided; diffusion layers are formed on the two sides of the substrate single crystal respectively, impurity atoms are annealed and diffused into the substrate single crystal to form the diffusion layers, and the doping type of the substrate single crystal is the same as that of the diffusion layers; a body region is formed on the diffusion layer on one side, wherein the doping type of the body region is opposite to that of the diffusion layer; an emitter region is formed in the body region, the body region is located between the diffusion layer and the emitter region, and the doping type of the emitter region is the same as that of the diffusion layer. Impurity atoms are diffused into the single crystal substrate to form the diffusion layer by adopting an annealing diffusion method, the atom doping concentration of the diffusion layer is monotonically reduced and is slowly changed, the withstand voltage of a PN junction between the diffusion layer and a body region is suitable for an equation of a slowly changing junction, the withstand voltage of the device is effectively improved, and the conduction voltage drop is lower.

Description

technical field [0001] The application belongs to the technical field of semiconductors, and in particular relates to an insulated gate bipolar transistor and a preparation method thereof. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT for short) is a composite fully-controlled voltage-driven power semiconductor device composed of a bipolar transistor (BJT) and an insulated gate field effect transistor (MOSFET), and has a MOSFET The high input impedance of the device and the low turn-on voltage drop of the power transistor (ie giant transistor, referred to as GTR) are widely used in various fields. [0003] The withstand voltage of the device and the conduction voltage drop are important factors reflecting the performance of the IGBT, and there is a trade-off between the two. At present, in the existing manufacturing process technology, it is difficult for the device withstand voltage and conduction voltage drop of the IGBT to reach the optimal level ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/739H01L29/06H01L29/423H01L21/331
CPCH01L29/7397H01L29/0603H01L29/0684H01L29/66325H01L29/4236
Inventor 刘利书
Owner GUANGDONG MIDEA WHITE HOME APPLIANCE TECH INNOVATION CENT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com