Immersion type phosphide synthesis and growth device under magnetic field

A growth device and immersion technology, which is applied in the field of semiconductor material preparation, can solve the problems of high equipment and process requirements, and achieve the effects of inhibiting melt convection, inhibiting the floating rate of bubbles, and stabilizing the synthesis process

Active Publication Date: 2021-10-19
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The above method has higher requirements on equipment and process

Method used

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  • Immersion type phosphide synthesis and growth device under magnetic field
  • Immersion type phosphide synthesis and growth device under magnetic field
  • Immersion type phosphide synthesis and growth device under magnetic field

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Embodiment Construction

[0020] The present invention will be further described through the embodiments below in conjunction with the accompanying drawings.

[0021] see figure 1 , an immersion-type phosphide synthesis and growth device under a magnetic field, a main furnace body 1, an upper furnace cover 2, and a furnace chassis 3 form a crystal growth space, and a crucible 7 is provided in the space, supporting a crucible support 19, a lower insulation layer 14, and a crucible rod 20 and crucible rod drive 21. A heater and an insulating layer are arranged on the periphery of the crucible 7 .

[0022] see figure 2 , the injection synthesis system 5 in the main furnace body 1 has a synthesis body rod 5-1, and 3-5 disc-shaped shielding layers are arranged at the upper end of the synthesis body rod 5-1. The closer the edge of the shielding layer is to the inner wall of the crucible, the better. In order not to affect the up and down movement of the injection synthesis system 5 in the crucible, in th...

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Abstract

The invention discloses an immersion type phosphide synthesis and growth device under a magnetic field, belongs to the field of semiconductor material preparation, and particularly relates to a device for synthesizing and growing a semiconductor phosphide in a mode of immersing phosphorus into a metal melt under the action of a static magnetic field. The device comprises a main furnace body, a crucible in the main furnace body, a heater on the periphery of the crucible and a heat preservation layer, and further comprises an injection synthesis system connected with a driving device, wherein the injection synthesis system bears red phosphorus and sinks into the crucible under the action of a driving device. According to the invention, By adopting the device provided by the invention, red phosphorus sinks into a melt in a solid form and floats upwards from the bottom of a crucible after being gasified, so that the problems of suck-back and the like caused by phosphorus bubbles are solved; and a transverse static magnetic field inhibits the floating speed of bubbles and also inhibits melt convection in the temperature gradient direction, so that the synthesis process is more stable and rapid.

Description

technical field [0001] The invention belongs to the field of semiconductor material preparation, in particular to a device for synthesizing and growing semiconductor phosphide by means of phosphorus immersion into metal melt under the action of a static magnetic field. Background technique [0002] Semiconductor phosphides include indium phosphide, gallium phosphide, phosphorus germanium zinc, etc., which are widely used in microelectronics, optoelectronics, acousto-optic and other fields. The synthesis of these phosphides is mainly through injection synthesis technique and diffusion synthesis technique. [0003] The diffusion synthesis method has long diffusion time, low efficiency, and low purity of synthetic materials. Injection synthesis technology is to directly inject phosphorus gas into the melt, a large number of bubbles accompany the flow of the melt, and the synthesis efficiency is very high. The injection synthesis technique is the most efficient method for the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00C30B15/00C30B28/06C30B28/10C30B29/40C30B29/42
CPCC30B11/006C30B28/06C30B29/42C30B15/00C30B28/10C30B29/40
Inventor 孙聂枫王书杰徐森锋史艳磊邵会民付莉杰卜爱民李晓岚王阳
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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