Novel cyclic amides containing
tin or lead are disclosed. These cyclic amides can be used for
atomic layer deposition or
chemical vapor deposition of
tin or lead as well as their oxides, sulfides, selenides, nitrides, phosphides, carbides, silicides or borides or other compounds.
Tin(IV)
oxide, SnO2, films were deposited by reaction of a cyclic
tin amide vapor and H2O2 or NO2 as
oxygen sources. The films have high purity, smoothness, transparency, electrical
conductivity, density, and uniform thickness even inside very narrow holes or trenches. Deposition temperatures are low enough for thermally sensitive substrates such as plastics. Suitable applications of these films include displays, light-emitting diodes, solar cells and gas sensors.
Doping SnO2 with aluminum was used to reduce its
conductivity, making material suitable as the active
semiconductor layer in
electron multipliers or transparent transistors. Deposition using the same tin precursor and H2S deposited tin monosulfide, SnS, a material suitable for solar cells.