Semiconductor structure and manufacturing method thereof

Abstract

The embodiment of the invention provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises a substrate, a bonding pad which is disposed on the substrate and whose surface is exposed out of the substrate, a bonding column which is located on the surface, away from the substrate, of the bonding pad and makes contact with the bonding pad; a first device which is located on the substrate and spaced apart from the bonding column, a welding pad which is located on the surface of the first device away from the substrate, a lead which connects the bonding pad and the bonding column, and a protective dielectric layer which extends along the side wall of the bonding column. According to the embodiment of the invention, the connection strength between the lead and the bonding column and the bonding pad is improved, and the protection effect on the bonding column is enhanced, so that the stability of the semiconductor structure is improved.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] With the advancement of technology, the degree of integration and integration of semiconductor packaging is gradually enhanced, and electronic equipment is developing in the direction of miniaturization, high speed, high reliability, low cost and low power consumption. Connections in semiconductor packages are usually made by wire bonding. Wire bonding (Wire Bonding) is to use wires to interconnect the I / O terminals of the chip with the corresponding package pins or pads on the substrate. In the solid-phase welding process, heating, pressure and ultrasonic energy are used to destroy the surface oxide layer and pollution, produce plastic deformation, and electron sharing and atomic diffusion occur in the intimate contact of the interface to form solder joints. [00...

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Problems solved by technology

[0003] However, with the improvement of package integration, the distance between the I / O terminal of the chip and the package pin or the pad on the substrate is further reduced, because the I / O terminal of the chip is higher than the package pin or the pad on the substrate. , when the wire forms the first bonding point on the I / O terminal of the chip and the second bonding point on the package pin or the pad of the substrate, the height difference between the first bonding point and the second bonding point is relatively small Large and the distance between the first bonding point and the second bonding point is small, so that the bending degree of the metal wire is relatively large, and the first bonding point and the second bonding point are easy to crack, which affects the stability of the semiconductor structure

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