Gallium nitride-based light emitting diode epitaxial wafer and preparation method thereof

Abstract

The invention provides a gallium nitride-based light emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of semiconductors. The light emitting diode epitaxial wafer comprises a substrate, a buffer layer, an undoped gallium nitride layer, an N-type layer, an active layer, a composite P-type layer and a P-type contact layer, wherein the buffer layer, the undoped gallium nitride layer, the N-type layer, the active layer, the composite P-type layer and the P-type contact laye rare stacked on the substrate in sequence, the composite P-type layer comprises a first composite layer and a second composite layer which are stacked on the active layer in sequence, the first composite layer is a gallium nitride layer, the second composite layer is a P-type gallium nitride layer, a plurality of protrusions are arranged on the face, making contact with the first composite layer, of the active layer, and the protrusions penetrate through the first composite layer and are located in the second composite layer, the plurality of protrusions are made of gallium oxide materials. According to the light emitting diode epitaxial wafer, Mg doping can be reduced, hole expansion and effective injection under small current are improved, and the light-emitting efficiency of the epitaxial wafer is improved.

Description

technical field [0001] The disclosure relates to the technical field of semiconductors, in particular to a GaN-based light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) is a semiconductor diode that can convert electrical energy into light energy. LED has the advantages of high efficiency, energy saving, and environmental protection, and is widely used in traffic indication, outdoor full-color display and other fields. [0003] At present, gallium nitride-based LEDs have received more and more attention and research. The main body of its epitaxial structure is: substrate (sapphire substrate), gallium nitride or aluminum-doped gallium nitride buffer layer, undoped GaN layer, N Type layer, current active layer, P-type layer and P-type contact layer. Wherein, both the P-type layer and the P-type contact layer are Mg-doped GaN layers. When a current flows...

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Problems solved by technology

However, heavy doping of Mg will introduce additional defects and impurities, making it more difficult to inject holes with low mobility, especially in micro-display LEDs, where the operating current is small and the problem of low hole injection efficiency will be more prominent.

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