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Gallium nitride-based light-emitting diode epitaxial wafer and preparation method thereof

A light-emitting diode, gallium nitride-based technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of low hole injection efficiency, small operating current, and difficult hole injection, so as to improve injection efficiency and reduce doping Miscellaneous, the effect of releasing lattice stress

Active Publication Date: 2022-06-17
HC SEMITEK ZHEJIANG CO LTD
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, heavy doping of Mg will introduce additional defects and impurities, making it more difficult to inject holes with low mobility, especially in micro-display LEDs, where the operating current is small and the problem of low hole injection efficiency will be more prominent.

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  • Gallium nitride-based light-emitting diode epitaxial wafer and preparation method thereof
  • Gallium nitride-based light-emitting diode epitaxial wafer and preparation method thereof
  • Gallium nitride-based light-emitting diode epitaxial wafer and preparation method thereof

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Embodiment Construction

[0036] In order to make the objectives, technical solutions and advantages of the present disclosure clearer, the embodiments of the present disclosure will be further described in detail below with reference to the accompanying drawings.

[0037] figure 1 It is a schematic structural diagram of a GaN-based light-emitting diode epitaxial wafer provided by the embodiment of the present disclosure, such as figure 1 As shown, the light-emitting diode epitaxial wafer includes a substrate 1, a buffer layer 2, an undoped gallium nitride layer 3, an N-type layer 4, an active layer 5, and a composite P-type layer stacked on the substrate 1 in sequence. 6 and P-type contact layer 7 .

[0038] The composite P-type layer 6 includes a first composite layer 61 and a second composite layer 62 sequentially stacked on the active layer. The first composite layer 61 is a gallium nitride layer, the second composite layer 62 is a P-type gallium nitride layer, and the side of the active layer 5 ...

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Abstract

The disclosure provides a GaN-based light-emitting diode epitaxial wafer and a preparation method thereof, belonging to the technical field of semiconductors. The light-emitting diode epitaxial wafer includes a substrate, a buffer layer, an undoped gallium nitride layer, an N-type layer, an active layer, a composite P-type layer, and a P-type contact layer sequentially stacked on the substrate; the composite P-type layer Including the first composite layer and the second composite layer stacked on the active layer in sequence, the first composite layer is a gallium nitride layer, the second composite layer is a P-type gallium nitride layer, the active layer and the first composite layer There are multiple protrusions on the contacting side, and the multiple protrusions pass through the first compound layer and are located in the second compound layer, and the multiple protrusions are made of gallium oxide material. The light-emitting diode epitaxial wafer can reduce Mg doping, improve hole expansion and effective injection under low current, and improve the luminous efficiency of the epitaxial wafer.

Description

technical field [0001] The present disclosure relates to the technical field of semiconductors, and in particular, to a gallium nitride-based light-emitting diode epitaxial wafer and a preparation method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, LED for short) is a semiconductor diode that can convert electrical energy into light energy. LED has the advantages of high efficiency, energy saving, green environmental protection, and has a wide range of applications in traffic indication, outdoor full-color display and other fields. [0003] At present, GaN-based LEDs have received more and more attention and research. The main body of the epitaxial structure is: substrate (sapphire substrate), GaN or Al-doped GaN buffer layer, undoped GaN layer, N type layer, current active layer, P-type layer and P-type contact layer. The P-type layer and the P-type contact layer are both Mg-doped gallium nitride layers. When a current passe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/24H01L33/32H01L33/00
CPCH01L33/24H01L33/32H01L33/0075H01L33/0066
Inventor 王群郭炳磊葛永晖王江波董彬忠李鹏
Owner HC SEMITEK ZHEJIANG CO LTD
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