Semiconductor device and manufacturing method thereof

Abstract

The invention discloses a semiconductor device and a manufacturing method thereof. The semiconductor device comprises an epitaxial substrate and a laminated passivation layer, the epitaxial substrate comprises a barrier layer, and the upper surface of the barrier layer is provided with a source electrode, a drain electrode and a gate electrode. The laminated passivation layer comprises a first passivation layer and a second passivation layer, the second passivation layer is located on the upper layer of the first passivation layer, the first passivation layer is made of a non-doped P-type material, the second passivation layer is made of any one of aluminum oxide, silicon nitride and silicon oxide, the laminated passivation layer is arranged between the source electrode and the drain electrode, and the gate electrode is arranged on the laminated passivation layer. According to the invention, the non-doped P-type material is used as the first layer of passivation material, a p-n junction is formed at the interface of the non-doped P-type material and GaN or AlGaN, an interface electric leakage channel can be effectively blocked, a field control effect is achieved, and the off-state electric leakage of the device is directly reduced. Meanwhile, the second passivation layer can effectively prevent water vapor, oxygen and the like from entering the surface interface of the barrier layer, so that the reliability of the device is improved.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of semiconductors, and in particular, to a semiconductor device and a manufacturing method thereof. Background technique [0002] With the development of science and technology towards high speed and high energy efficiency, the application of traditional silicon-based semiconductor devices in terms of high frequency and high energy efficiency is increasingly approaching the physical limit due to the limitations of large on-resistance and high-temperature performance degradation. Wide bandgap GaN semiconductors have the advantages of high critical breakdown field strength, high electron saturation drift rate, and high temperature resistance, especially AlGaN / GaN HEMTs have high mobility 2DEG (two-dimensional electron gas) channels, showing excellent frequency characteristics And power characteristics, it is considered to be the most competitive technology among high-speed, high-energy-ef...

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Problems solved by technology

However, since AlGaN / GaN materials are usually heteroepitaxially grown, the defect density caused by lattice mismatch and thermal mismatch at the surface interface is high, resulting in reliability problems such as current collapse, large off-state leakage, and early breakdown.

[0003] In related technologies, a single passivation layer is often used, and the passivation effect comes from two aspects: reducing the dangling bonds on the surface of AlGaN to reduce the surface state, increasing the barrier between the gate and the surface state to reduce electrons being captured by the surface state The probability of passivation material selection and ideas are relatively simple and there is no direct control or improvement of leakage

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