43results about How to "Minimizing leakage current" patented technology

A gas sensor is provided which includes a sensor device, a plurality of contact springs, an insulator, a plurality of connecting terminals, and a lead cover. The insulator has an end surface which faces the connecting terminals and also includes as many protrusions as the contact springs. The insulator also has formed therein holding holes in which the contact springs are disposed. Each of the protrusions has formed therein a through-hole which communicates between an end surface of the protrusion and one of the holding holes. The through-holes are discrete from each other and formed one in each of the protrusions. This minimizes a risk of occurrence of leakage current between the contact springs or the connecting terminals arising from dew condensation and ensures a high degree of measurement accuracy of the gas sensor.

Provided are an embedded system and a method for relocating memory pages therefor. The embedded system includes a processor, a data relocating circuit for receiving a logical address from the processor, mapping the received logical address to a physical address to locate a valid page in a predetermined bank, and generating a bank power control signal according to whether or not a corresponding memory bank includes valid pages, and a memory including a plurality of memory banks addressed by a physical address outputted from the data relocating circuit and a plurality of switching means for selectively supplying a power voltage to each of memory banks in response to the bank power control signal.

A liquid crystal display for minimizing a leakage current to prevent brightness deterioration is disclosed. The liquid crystal display includes a backlight unit including a plurality of lamps, a plurality of lamp wires connected to the plurality lamps, and a bottom cover in which the lamps are received, the bottom cover having a plurality of holes through which the lamp wires are passed, an inverter circuit board generating a power to drive the lamps and a plurality of sockets connected to output terminals of the inverter circuit board and connecting to the lamp wires, wherein at least one socket among the sockets is inclined at a side of the inverter circuit board.

Disclosed is a secondary battery having a constant-voltage device for preventing the secondary battery from being excessively overcharged. The breakdown voltage of the constant-voltage device is lower than the explosion or ignition voltage of the secondary battery, so the discharge operation may occur before the secondary battery is exploded or ignited even if the voltage of the secondary battery rises above the overcharge voltage, thereby protecting the secondary battery from explosion or ignition. The leakage current value of the constant-voltage device is less than 0.05% of the capacity value of the secondary battery under the maximum charge voltage of the secondary battery, or the breakdown voltage of the constant-voltage device is higher than the maximum charge voltage of the secondary battery. Thus, the constant-voltage device rarely generates the leakage current even if the secondary battery has been charged with the maximum charge voltage.

This invention relates to a method of healing defects at junctions of a semiconductor device, which includes growing a p-Ge layer on a substrate, performing ion implantation on the p-Ge layer to form an n+ Ge region or performing in-situ doping on the p-Ge layer and then etching to form an n+ Ge region or depositing an oxide film on the p-Ge layer and performing patterning, etching and in-situ doping to form an n+ Ge layer, forming a capping oxide film, performing annealing at 600˜700° C. for 1˜3 hr, and depositing an electrode, and in which annealing enables Ge defects at n+ / p junctions to be healed and the depth of junctions to be comparatively reduced, thus minimizing leakage current, thereby improving properties of the semiconductor device and achieving high integration and fineness of the semiconductor device.