43results about How to "Minimizing leakage current" patented technology

The present invention relates to a mobile apparatus comprising an integrated circuit to operate predefined functions, which integrated circuit is susceptible to be set in a standby operating mode wherein which said circuit can resume operation within a predefined delay. The circuit comprises configuration sequential logic having defined states that need to be stored before the circuit enters in standby mode. The mobile apparatus further comprises a power down unit for storing the states of the configuration sequential logic into a low leakage storage area during standby mode that reduces standby current considerably.

A semiconductor device and related method of manufacture are disclosed. The device comprises; a trench having a corner portion formed in the semiconductor substrate, a first oxide film formed on an inner wall of the trench and having an upper end portion exposing the corner portion of the semiconductor substrate, a nitride liner formed on the first oxide film, a second oxide film formed in contact with the upper end of the first oxide film and on the exposed corner portion and an upper surface of the semiconductor substrate, a field insulating film formed on the nitride liner to substantially fill the trench, and a field protecting film formed in contact with the second oxide film and filling a trench edge recess formed between the field insulating film and the second oxide film.

A backlight assembly is provided. The backlight assembly includes a plurality of lamps and a plurality of holes in a cover bottom that correspond to the plurality of lamps. The backlight may be capable of improving luminous efficiency of a plurality of lamps is provided.

Disclosed herein is a pad controlling apparatus controlling current and voltage applied to a pad, the pad controlling apparatus including: a voltage drop unit dropping the voltage applied to the pad; a switching unit connected in parallel with the voltage drop unit; and a control unit comparing a level of the dropped voltage and first reference voltage with each other and turning on the switching unit on when the level of the dropped voltage is larger than the first reference voltage. According to the present invention, even though interrupt occurs from the outside, a chip may be normally operated.

An apparatus comprising a circuit configured to control anode voltages of one or more adjacent pixel rows, which are adjacent to an Nth pixel row, to achieve minimal voltage differences between said Nth pixel row and said adjacent pixel rows to suppress luminance drops in an OLED display by minimizing leakage currents being introduced from adjacent pixel rows.

A method for generating an input vector to reduce the leakage current in an integrated circuit by using heuristics includes transforming the integrated circuit to a logic representation with PMOS and NMOS parts and P and N devices of the integrated circuit into edges, selecting between PMOS and NMOS logic representations the one with deepest serial stack; and for the selected PMOS or NMOS logic representation, assigning weights to the edges, thereby generating a weighted graph. The assignment includes starting from the output terminal to the Power Vdd (for PMOS) or Ground Vss (for NMOS), and labeling edge weights in a descending order. The resulted cost function from the method of the present invention can be applied as heuristics in different algorithms, such as branch-and-bound, simulated annealing, or genetic algorithm.

A gas sensor is provided which includes a sensor device, a plurality of contact springs, an insulator, a plurality of connecting terminals, and a lead cover. The insulator has an end surface which faces the connecting terminals and also includes as many protrusions as the contact springs. The insulator also has formed therein holding holes in which the contact springs are disposed. Each of the protrusions has formed therein a through-hole which communicates between an end surface of the protrusion and one of the holding holes. The through-holes are discrete from each other and formed one in each of the protrusions. This minimizes a risk of occurrence of leakage current between the contact springs or the connecting terminals arising from dew condensation and ensures a high degree of measurement accuracy of the gas sensor.

Provided are an embedded system and a method for relocating memory pages therefor. The embedded system includes a processor, a data relocating circuit for receiving a logical address from the processor, mapping the received logical address to a physical address to locate a valid page in a predetermined bank, and generating a bank power control signal according to whether or not a corresponding memory bank includes valid pages, and a memory including a plurality of memory banks addressed by a physical address outputted from the data relocating circuit and a plurality of switching means for selectively supplying a power voltage to each of memory banks in response to the bank power control signal.

A liquid crystal display for minimizing a leakage current to prevent brightness deterioration is disclosed. The liquid crystal display includes a backlight unit including a plurality of lamps, a plurality of lamp wires connected to the plurality lamps, and a bottom cover in which the lamps are received, the bottom cover having a plurality of holes through which the lamp wires are passed, an inverter circuit board generating a power to drive the lamps and a plurality of sockets connected to output terminals of the inverter circuit board and connecting to the lamp wires, wherein at least one socket among the sockets is inclined at a side of the inverter circuit board.

Disclosed is a secondary battery having a constant-voltage device for preventing the secondary battery from being excessively overcharged. The breakdown voltage of the constant-voltage device is lower than the explosion or ignition voltage of the secondary battery, so the discharge operation may occur before the secondary battery is exploded or ignited even if the voltage of the secondary battery rises above the overcharge voltage, thereby protecting the secondary battery from explosion or ignition. The leakage current value of the constant-voltage device is less than 0.05% of the capacity value of the secondary battery under the maximum charge voltage of the secondary battery, or the breakdown voltage of the constant-voltage device is higher than the maximum charge voltage of the secondary battery. Thus, the constant-voltage device rarely generates the leakage current even if the secondary battery has been charged with the maximum charge voltage.

This invention relates to a method of healing defects at junctions of a semiconductor device, which includes growing a p-Ge layer on a substrate, performing ion implantation on the p-Ge layer to form an n+ Ge region or performing in-situ doping on the p-Ge layer and then etching to form an n+ Ge region or depositing an oxide film on the p-Ge layer and performing patterning, etching and in-situ doping to form an n+ Ge layer, forming a capping oxide film, performing annealing at 600˜700° C. for 1˜3 hr, and depositing an electrode, and in which annealing enables Ge defects at n+ / p junctions to be healed and the depth of junctions to be comparatively reduced, thus minimizing leakage current, thereby improving properties of the semiconductor device and achieving high integration and fineness of the semiconductor device.

A semiconductor device including a capacitor which includes a first electrode, a second electrode, and a dielectric layer disposed between the first electrode and the second electrode, the dielectric layer including: a first paraelectric film formed of a material containing a first metal element and at least one kind of second metal element; a second paraelectric film disposed between the first electrode and the first paraelectric film; and a third paraelectric film disposed between the second electrode and the first paraelectric film, wherein the second paraelectric film is formed of a material containing the first metal element but substantially not containing the second metal element, and the third paraelectric film is formed of a material containing the first metal element but substantially not containing the second metal element.

This specification relates to an active SONAR system comprising a transmitter, a transducer and an impedance matching circuit for expanding bandwidth and increasing a power factor value in sound and ultrasonic wave bands by mutually matching resonant frequencies of the transducer and the impedance matching circuit or a resonant frequency between the transducer and the impedance matching circuit using an electrical equivalent model corresponding to actual impedance data of the transducer and controlling the positions and the intervals of the frequencies at which reactance components of the transducer including the impedance matching circuit become zero, and an impedance matching method thereof. This allows for efficient driving in a broadband between the transmitter and the transducer in the active SONAR system, contributing to output power performance and detection performance of the active SONAR system.