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Ground substrate and method for producing same

A base substrate, sapphire substrate technology, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, crystal growth, etc., can solve problems such as crystal defects

Pending Publication Date: 2021-10-29
NGK INSULATORS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for GaN, α-Ga 2 o 3 , single-crystal substrates with fewer crystal defects have not been practically used, and are usually formed on sapphire substrates with different lattice constants from these materials by heteroepitaxial growth
Therefore, it is easy to generate crystal defects due to the difference in lattice constant with sapphire

Method used

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  • Ground substrate and method for producing same
  • Ground substrate and method for producing same
  • Ground substrate and method for producing same

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0078] (1) Fabrication of Composite Base Substrate

[0079] (1a) Fabrication of Alignment Precursor Layer

[0080] As raw material powder, commercially available Cr 2 o 3 Powder and commercially available Fe 2 o 3 The powder obtained by mixing the powder at a molar ratio of 72:28 is used as a substrate, using sapphire (diameter 50.8mm (2 inches), thickness 0.43mm, c-plane, off-angle 0.3°), using figure 1 The shown aerosol deposition (AD) device 20 is formed on the seed substrate (sapphire substrate) by Cr 2 o 3 Constituted AD film (alignment precursor layer). The configuration of the aerosol deposition (AD) device 20 is as described above.

[0081] AD film-forming conditions are as follows. That is, Ar was used as the carrier gas, and a nozzle made of ceramics having a slit of 5 mm on the long side and 0.3 mm on the short side was used. The scanning conditions of the nozzle are as follows: at a scanning speed of 0.5 mm / s, move 55 mm along the direction perpendicular t...

example 2

[0137] (1) Fabrication of Composite Base Substrate

[0138] As the raw material powder of the AD film, commercially available Cr 2 o 3 Powder, commercially available Fe 2 o 3 Powder and commercially available Al 2o 3 A composite base substrate was produced in the same manner as in Example 1 (1) except that the powders were mixed at a molar ratio of 45:45:10.

[0139] (2) Evaluation of alignment layer

[0140] (2a) Section EDX

[0141] Using an energy dispersive X-ray analyzer (EDX), a composition analysis of a cross section perpendicular to the main surface of the substrate was performed. As a result, only Cr, Fe, Al, and O were detected from the surface of the composite base substrate to a depth of 20 μm. The ratios of Cr, Fe, Al, and O hardly change up to a depth of 20 μm, and it can be seen that a Cr—Fe—Al oxide layer (composition stable region) having a thickness of 20 μm is formed. In addition, it was confirmed that Cr, Fe, O, and Al were also detected in the ran...

example 3

[0158] (1) Fabrication of the base substrate

[0159] (1a) Fabrication of Composite Base Substrate

[0160] In the same manner as in Example 1 (1), a composite base substrate was fabricated.

[0161] (1b) Thickening of the alignment layer

[0162] In order to thicken the alignment layer, an AD film (alignment precursor layer) was formed again on the alignment layer of the composite base substrate. use figure 1 The shown AD film-forming device 20 forms a layer composed of Cr on the alignment layer of the composite base substrate. 2 o 3 and Fe 2 o 3 Constituted AD film (alignment precursor layer).

[0163] AD film-forming conditions are as follows. That is, Ar was used as the carrier gas, and a nozzle made of ceramics having a slit of 5 mm on the long side and 0.3 mm on the short side was used. The scanning conditions of the nozzle are as follows: at a scanning speed of 0.5 mm / s, move 55 mm along the direction perpendicular to the long side of the slit and move forward,...

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Abstract

The invention provides a high-quality ground substrate comprising an orientation layer that is used for growing a crystal of a nitride or oxide of a group 13 element. The number of crystal defects (dislocations) in the orientation layer is significantly reduced. The ground substrate comprises an orientation layer that is used for growing a crystal of a nitride or oxide of a group 13 element. The orientation layer surface that is used for crystal growth is constituted from a material having a corundum type crystal structure having a larger a-axis length and / or c-axis length than sapphire. The orientation layer contains a solid solution containing two or more compounds selected from the group consisting of [alpha]-Al2O3, [alpha]-Cr2O3, [alpha]-Fe2O3, [alpha]-Ti2O3, [alpha]-V2O3 and [alpha]-Rh2O3.

Description

technical field [0001] The present invention relates to a base substrate for crystal growth of nitrides or oxides of Group 13 elements and a manufacturing method thereof. Background technique [0002] In recent years, semiconductor devices using gallium nitride (GaN) have been put into practical use. For example, a device formed by stacking n-type GaN layers, quantum well layers including InGaN layers, and barrier layers including GaN layers alternately on a sapphire substrate to form a multi-quantum well layer (MQW) and a p-type GaN layer is realized. mass production. [0003] In addition, the corundum phase type α-gallium oxide (α-Ga) having the same crystal structure as sapphire is actively being developed. 2 o 3 ) research and development. In fact, α-Ga 2 o 3 The band gap is as high as 5.3eV, and it is expected to be used as a material for power semiconductor devices. For example, Patent Document 1 (Japanese Unexamined Patent Publication No. 2014-72533) relates to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/16H01L21/365
CPCC30B29/16C30B1/04H01L21/0254H01L21/02565H01L21/02433H01L21/02658H01L21/0251H01L21/0242H01L21/02488H01L21/02439C30B25/18C30B29/403H01L29/24
Inventor 渡边守道吉川润
Owner NGK INSULATORS LTD
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