Low-delay semi-dynamic trigger based on tunneling field effect transistor hybrid integration

Abstract

The invention discloses a low-delay semi-dynamic flip-flop based on tunneling field effect transistor hybrid integration. The flip-flop comprises a dynamic front-end circuit and a static rear-end circuit, the dynamic front-end circuit is composed of a pull-up circuit, a pull-down circuit and a latch, the pull-up circuit is a P-type metal insulated gate transistor. The pull-down circuit comprises three N-type TFET transistors, two TFET phase inverters and a TFET NAND gate; the static output circuit uses a pull-up P-type TFET and two pull-down N-type TFETs and then is connected with a CMOS latch. Under the working voltages of 0.55 V, 0.5 V, 0.45 V and 0.4 V, the clock output (C2q) delay and retention time are remarkably reduced compared with a full MOSFET circuit, the clock output (C2q) delay and retention time are most remarkable under the voltage of 0.4 V and are reduced by 90% and 147% respectively, and the power delay product is reduced compared with a full TFET circuit.

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to a semi-dynamic flip-flop circuit structure based on tunneling field effect transistor (TFET) hybrid integration. Background technique [0002] As a basic component of a sequential circuit, a flip-flop is one of the essential components in electronic products. A basic flip-flop consists of two latches connected end to end. In order to optimize the performance of the flip-flop, the flip-flop has various structures, such as figure 1 The semi-dynamic flip-flop structure (Semi-Dynamic Flip-Flop) composed of P-type metal insulated gate transistors (MOSFETs) is shown, which consists of two parts: a dynamic front end and a static back end. This structure has low delay, high stability, There are many advantages such as small clock load. [0003] In recent years, with the rapid development of embedded devices and wearable devices, the size of electronic products required by the industr...

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Problems solved by technology

[0005] However, if the TFET circuit is fully used, due to the influence of the TFET Miller effect, it will increase unnecessary switching activities in the circuit and increase dynamic power consumption. Therefore, it is necessary to partially replace the MOSFET, and use TFET to replace the MOSFET on the critical path to reduce delay. At the same time, the MOSFETs on the remaining paths are reserved to reduce power consumption and optimize the overall performance of the semi-dynamic flip-flop

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