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Method for forming LaNiO3 thin film and method for manufacturing device

A thin film and device technology, applied in the field of LaNiO3 thin film, can solve the problems of increased film resistivity, etc., and achieve the effect of improved wettability and excellent film coating

Inactive Publication Date: 2021-11-05
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the film thickness becomes uneven due to the generation of voids, there will be problems such as an increase in the resistivity of the film

Method used

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  • Method for forming LaNiO3 thin film and method for manufacturing device
  • Method for forming LaNiO3 thin film and method for manufacturing device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] On a (100) plane-oriented Si substrate with a size of 17mm×17mm, SiO is sequentially stacked 2 layer, TiO 2 layer and Pt layer (top layer). The Pt layer was sputtered with a Pt source at room temperature under an argon atmosphere, and after film formation, no heat treatment was performed in an argon atmosphere. This substrate (hereinafter, referred to as a Pt plate.) was placed on a hot plate heated at 300° C. for 1 minute, and prebaked in the air. After the preliminary drying, the Pt substrate was cooled, and immediately the molecular species adsorbed on the surface of the Pt substrate was measured by thermal desorption gas analysis (Thermal Desorption Spectroscopy, hereinafter referred to as TDS method). On the other hand, the above-mentioned Pt substrate was pre-baked under the same conditions as above, and the Pt substrate was immediately moved to a spin coater without being placed in the atmosphere, and the composition No. shown in Table 1 was spin-coated on the ...

Embodiment 2

[0056] After pre-baking the same Pt ​​substrate as in Example 1 at 300° C. for 5 minutes using the same heating plate as in Example 1, the Pt substrate was cooled, and the molecular species adsorbed on the surface of the Pt substrate was immediately measured by the TDS method. On the other hand, the above-mentioned Pt substrate was pre-baked under the same conditions as above, and the Pt substrate was immediately moved to a spin coater without being placed in the atmosphere, and the composition No. shown in Table 1 was spin-coated on the Pt substrate. .2. Next, in the same manner as in Example 1, drying, temporary sintering, and firing are performed to form LaNiO 3 film.

Embodiment 3

[0058] After pre-baking the same Pt ​​substrate as in Example 1 at 200° C. for 1 minute using the same heating plate as in Example 1, the Pt substrate was cooled, and the molecular species adsorbed on the surface of the Pt substrate was immediately measured by the TDS method. On the other hand, the above-mentioned Pt substrate was pre-baked under the same conditions as above, and the Pt substrate was immediately moved to a spin coater without being placed in the atmosphere, and the composition No. shown in Table 1 was spin-coated on the Pt substrate. .3. Next, in the same manner as in Example 1, drying, temporary sintering, and firing are performed to form LaNiO 3 film.

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Abstract

The present invention relates to a method for forming a LaNiO3 thin film and a method for manufacturing a device, and the method for forming the LaNiO3 thin film according to the present invention comprises in a substrate covered with a Pt electrode, and in a state in which the amount of H2, the amount of H2O, and the amount of CO adsorbed on the surface of the substrate per 1 cm2 are 1.0*10-10 g or less, 2.7*10-10 g or less, and 4.2*10-10 g or less, respectively, coating a liquid composition for forming the LaNiO3 thin film to the surface of the substrate and drying to form a coating film; a step for temporarily sintering the coating film; and a step for forming the LaNiO3 thin film by firing the temporarily sintered coating film.

Description

[0001] This application is for the application date is March 18, 2015, the application number is 201580005883.8, and the invention name is "LaNiO 3 The divisional application of the invention patent application of "Formation method of thin film". technical field [0002] The present invention relates to a LaNiO for formation by chemical solution method (Chemical Solution Deposition, CSD method) 3 thin film approach, the LaNiO 3 Thin films are used in electrodes of film capacitors, capacitors for Ferroelectric Random Access Memory (FeRAM), piezoelectric elements, and pyroelectric infrared detection elements. [0003] This application claims priority based on Patent Application No. 2014-061622 filed in Japan on March 25, 2014, and Patent Application No. 2014-260010 filed in Japan on December 24, 2014, and the contents thereof are incorporated herein. Background technique [0004] In the past, LaNiO 3 In addition to forming thin films by vacuum evaporation methods such as sp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B05D3/02B05D7/24
CPCC04B2235/3227H01G4/10H01G4/33H01G4/1272C04B35/01C04B35/62218C04B2235/3279C04B2235/44C04B2235/441C04B2235/443H10N30/877H10N30/853H10N30/078H10N30/079H10N30/077B05D3/0209B05D3/0218B05D3/0413B05D5/00C01G53/70C01P2006/40H01G4/008
Inventor 藤井顺樱井英章曽山信幸
Owner MITSUBISHI MATERIALS CORP
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