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Semiconductor equipment and process chamber thereof

A process chamber and semiconductor technology, applied in semiconductor/solid-state device manufacturing, crystal growth, from chemically reactive gases, etc., can solve the problems of process chamber heat preservation and heating rate, so as to improve process speed and production capacity, and improve heat preservation effect , Improve the effect of process yield

Pending Publication Date: 2021-11-19
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the shortcomings of the existing methods, this application proposes a semiconductor device and its process chamber to solve the technical problems of how to keep the process chamber warm and increase the heating rate in the prior art

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  • Semiconductor equipment and process chamber thereof
  • Semiconductor equipment and process chamber thereof
  • Semiconductor equipment and process chamber thereof

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Embodiment Construction

[0035] The present application is described in detail below, and examples of embodiments of the present application are shown in the drawings, wherein the same or similar reference numerals denote the same or similar components or components having the same or similar functions throughout. Also, detailed descriptions of known technologies will be omitted if they are not necessary to illustrate the features of the present application. The embodiments described below by referring to the figures are exemplary only for explaining the present application, and are not construed as limiting the present application.

[0036] Those skilled in the art can understand that, unless otherwise defined, all terms (including technical terms and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which this application belongs. It should also be understood that terms, such as those defined in commonly used dictionaries, should be u...

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PUM

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Abstract

The embodiment of the invention provides semiconductor equipment and a process chamber thereof. The process chamber comprises a process pipe, an electromagnetic heating assembly and a heat preservation structure; the electromagnetic heating assembly comprises an electromagnetic coil and an induction heater, the electromagnetic coil is arranged on the periphery of the process pipe in a surrounding mode, a first preset interval is formed between the inner wall of the electromagnetic coil and the outer wall of the process pipe, and the turn interval of the electromagnetic coil is sequentially decreased from the middle to the two ends of the electromagnetic coil; the induction heater is arranged in the process pipe and corresponds to the electromagnetic coil, an accommodating space is formed in the induction heater, and the induction heater is used for inducing a magnetic field of the electromagnetic coil to generate heat; and the heat preservation structure wraps the induction heater, and a transmission opening is formed in the position, corresponding to the containing space, of the heat preservation structure. According to the embodiment of the invention, the thermal insulation effect and the heating efficiency of the process chamber are improved.

Description

[0001] This application is a divisional application with the application number 202010989779.X, the application date is September 18, 2020, and the invention name is "semiconductor equipment and its process chamber". technical field [0002] The present application relates to the technical field of semiconductor processing, and in particular, the present application relates to a semiconductor device and a process chamber thereof. Background technique [0003] At present, the epitaxial growth process refers to the growth of a single crystal layer with certain requirements and the same crystal orientation as the substrate on a single crystal substrate (wafer), as if the original crystal has extended outward. Compared with the growth environment of the silicon epitaxy process, the growth environment temperature of the silicon carbide epitaxy process is higher, usually reaching 1500 to 1800 degrees Celsius, and the growth cycle is longer. At present, chemical vapor deposition (C...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/10C30B25/08C30B29/36H01L21/67
CPCC30B25/10C30B25/08C30B29/36H01L21/67098H01L21/67109
Inventor 李世凯
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD