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PECVD process for reducing EL winding plating smudginess of crystalline silicon solar cell

A solar cell and process technology, applied in the field of PECVD process, can solve the problems of no PECVD process process optimization, the final effect is not obvious, etc., to achieve the effect of reducing EL winding and plating dirt, no need for equipment investment, and lower process temperature

Pending Publication Date: 2021-12-10
平煤隆基新能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] After investigation, it is found that most battery manufacturers solve the problem of ALD single-sided aluminum oxide winding and plating by adjusting the ALD process itself (because the winding and plating problem is inevitable, the final effect is not obvious), and there is no optimization of the front PECVD process. , by reducing pollution sources and improving the passivation effect of silicon nitride in the PECVD process to offset the EL contamination problem caused by aluminum oxide winding plating, the present invention proposes a new front PECVD process to improve EL winding plating contamination

Method used

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  • PECVD process for reducing EL winding plating smudginess of crystalline silicon solar cell
  • PECVD process for reducing EL winding plating smudginess of crystalline silicon solar cell
  • PECVD process for reducing EL winding plating smudginess of crystalline silicon solar cell

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Embodiment 1

[0034] A PECVD process for reducing EL coating contamination of crystalline silicon solar cells, the experimental group includes the following steps:

[0035] Step 1: Automatically load the silicon wafers after the back coating into the graphite boat in the front coating process;

[0036] Step 2: Enter the boat to open the furnace door, automatically transport the graphite boat full of silicon wafers to be processed into the process furnace tube, and close the furnace door. The speed of entering the boat is 3500cm / min, and the step time is 80s.

[0037] Step 3: The constant temperature furnace tube has a heating and temperature control system, which will automatically heat up to the process setting temperature: the furnace mouth is 530°C, and the furnace tail is 480°C. The reaction needs to be carried out under constant temperature conditions, and the time is 400s, so that the temperature in the reaction chamber reaches and Constantly set the temperature: 530°C at the furnace...

Embodiment 2

[0049] Embodiment 2: A kind of PECVD process that reduces crystalline silicon solar cell EL wraps around plating dirty, contrast group comprises the following steps:

[0050] Step 1: Automatically load the silicon wafers after the back coating into the graphite boat in the front coating process;

[0051] Step 2: Enter the boat to open the furnace door, automatically transport the graphite boat full of silicon wafers to be processed into the process furnace tube, and close the furnace door. The speed of entering the boat is 3500cm / min, and the step time is 80s.

[0052] Step 3: The constant temperature reaction needs to be carried out under constant temperature conditions, and the time is 350s, so that the temperature in the reaction chamber is kept constant at the set temperature: the furnace mouth is 560°C, and the furnace tail is 500°C.

[0053] Step 4: Vacuumize the furnace tube to achieve the vacuum conditions required for the film deposition reaction. At the same time, t...

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Abstract

The invention discloses a PECVD process for reducing EL winding plating smudginess of a crystalline silicon solar cell, and relates to the field of silicon solar cell manufacturing. The process comprises: S1,loading a wafer, and entering a boat; S2, carrying out primary heating and ventilation; S3, vacuumizing; S4, performing leak detection; S5, carrying out secondary constant-temperature ventilation; S6, performing constant-pressure ventilation; S7, carrying out multi-layer process deposition; S8, vacuumizing; S9, carrying out pressure returning; S10, discharging out of the boat; and S11, unloading the silicon wafer, automatically taking out the silicon wafer after the process from the graphite boat, inserting the silicon wafer into a flower basket, and transferring the silicon wafer to the next process. According to the invention, pollution sources are reduced and the passivation effect of silicon nitride is improved in the PECVD process, so that the problem of EL smudginess caused by aluminum oxide winding plating is counteracted.

Description

technical field [0001] The invention relates to the field of silicon solar cell manufacturing, and mainly relates to a PECVD process that can reduce the contamination of EL winding and plating. Background technique [0002] At present, the manufacturing process of crystalline silicon solar PERC cells mainly includes texturing, diffusion, SE, etching, annealing, back passivation, PECVD, screen printing + sintering, among which the back passivation dielectric film alumina is mostly completed by ALD process. At the beginning, the ALD process was completed by water process. In order to improve efficiency, output and reduce component power attenuation, the ozone process was used instead of water process to generate single-sided alumina to complete the back passivation process. Single-sided alumina strip The disadvantage is that there is front-side wrap-around plating. After front-side PECVD and printing and sintering, EL is prone to wrap-around plating contamination, which affect...

Claims

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Application Information

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IPC IPC(8): H01L31/18C23C16/02C23C16/34C23C16/44C23C16/505
CPCH01L31/1868H01L31/1804C23C16/345C23C16/4408C23C16/02C23C16/505Y02E10/547Y02P70/50
Inventor 段少雷彭平陈庆发郭飞陈磊夏中高李旭杰
Owner 平煤隆基新能源科技有限公司
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