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Ultrahigh-transparency conductive ITO film and preparation method thereof

A transparent conductivity, thin film technology, applied in the direction of coating, can solve the problem of difficult to achieve ultra-high transparent conductivity, and achieve the effects of increased conductivity, improved mobility, and safe operation

Active Publication Date: 2021-12-21
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide an ultra-high transparent conductive ITO film, a tin-doped indium oxide film, which can solve the problem that the existing transparent conductive film is difficult to achieve ultra-high transparent conductivity

Method used

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  • Ultrahigh-transparency conductive ITO film and preparation method thereof

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preparation example Construction

[0031] The invention provides a method for preparing an ultra-high transparent conductive ITO film, such as figure 1 As shown, the specific steps are as follows:

[0032] Step 1, using benzoylacetone, ethylene glycol methyl ether, indium nitrate, tin tetrachloride and acetic anhydride as raw materials to prepare tin-doped indium oxide sol;

[0033] In step 1, the molar ratio of benzoylacetone, ethylene glycol methyl ether, indium nitrate, tin tetrachloride, and acetic anhydride used is 1:51:1:0.09˜0.11:11.

[0034] Step 1 is specifically implemented according to the following steps:

[0035] Step 1.1 Mix benzoylacetone and ethylene glycol methyl ether, stir at room temperature until it dissolves, then add indium nitrate, and stir on a magnetic stirrer for 1 to 2 hours;

[0036] Step 1.2, continue to add tin tetrachloride and stir for 1 to 2 hours;

[0037] In step 1.3, finally add acetic anhydride, stir for 2-3 hours, and age for 24-48 hours to obtain a light yellow transpa...

Embodiment 1

[0051] A kind of ultra-high transparent conductive ITO film is a tin-doped indium oxide (ITO) nano film, the film is processed through a hydrogen atmosphere, wherein the hydrogen volume concentration is 1%, and the specific steps are as follows:

[0052]Mix benzoylacetone and ethylene glycol methyl ether, stir at room temperature until it dissolves, then add indium nitrate, stir on a magnetic stirrer for 1 hour, continue to add tin tetrachloride, stir for 1 hour, finally add acetic anhydride, stir After 2 hours and aging for 24 hours, a pale yellow transparent tin-doped indium oxide sol was obtained. All operations were carried out in a tightly sealed glove box. The vacuum degree in the glove box was 0.9pa, the nitrogen flow rate was 4ml / min, and the humidity 5%. Wherein, the molar ratio of benzoylacetone, ethylene glycol methyl ether, indium nitrate, tin tetrachloride, and acetic anhydride used is 1:51:1:0.09:11.

[0053] Place the soda-lime glass in an ultrasonic cleaner an...

Embodiment 2

[0056] A kind of ultra-high transparent conductive ITO thin film is a tin-doped indium oxide (ITO) nano-thin film, the thin film is processed through a hydrogen atmosphere, wherein the hydrogen volume concentration is 2%, and the specific steps are as follows:

[0057] Mix benzoylacetone and ethylene glycol methyl ether, stir at room temperature until it dissolves, then add indium nitrate, stir on a magnetic stirrer for 1 hour, continue to add tin tetrachloride, stir for 1 hour, finally add acetic anhydride, stir After 2 hours and aging for 24 hours, a pale yellow transparent tin-doped indium oxide sol was obtained. All operations were carried out in a tightly sealed glove box. The vacuum degree in the glove box was 0.9pa, the nitrogen flow rate was 4ml / min, and the humidity 5%. Wherein, the molar ratio of benzoylacetone, ethylene glycol methyl ether, indium nitrate, tin tetrachloride, and acetic anhydride used is 1:51:1:0.10:11.

[0058] Place the soda-lime glass in an ultra...

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Abstract

The invention discloses a preparation method of an ultrahigh-transparency conductive ITO film. The preparation method comprises the following specific steps: step 1, preparing tin-doped indium oxide sol by taking benzoylacetone, ethylene glycol monomethyl ether, indium nitrate, tin tetrachloride and acetic anhydride as raw materials; step 2, preparing ITO coated glass by using a soda-lime glass sheet as a coated substrate and adopting a dip-coating method; and step 3, placing the ITO coated glass obtained in the step 2 in a tubular furnace, and carrying out final treatment in a hydrogen atmosphere at 500-550 DEG C to obtain the ITO nanocrystalline film, wherein the air pressure is 0.1 MPa, the flow rate is 4-10 mL / min, and the heat preservation time is 10-15 min. The method can be used for large-area film preparation, and is suitable for industrial mass production. The invention discloses the ultrahigh-transparency conductive ITO thin film prepared by the method.

Description

technical field [0001] The invention belongs to the technical field of preparation methods of ITO thin films, and in particular relates to an ultrahigh transparent conductive ITO thin film, and also relates to a preparation method of the ultrahigh transparent conductive ITO thin film. Background technique [0002] Tin-doped indium oxide (ITO), a highly degenerate n-type semiconductor material, is considered to be one of the most commonly used transparent conducting oxide (TCO) materials due to its excellent optical and electrical properties. Has been widely used in light-emitting diodes, liquid crystal displays, gas sensors and solar cells and other fields. Transparency and conductivity are key indicators for evaluating TCO performance, but they are contradictory. Generally, TCO materials with high transparency have low conductivity, and vice versa. In order to obtain a high-transparency TCO, people hope that the TCO grains should be as small as possible, but the small gra...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/23
CPCC03C17/23C03C2217/215C03C2217/24Y02P70/50
Inventor 任洋刘萍刘荣欣赵高扬
Owner XIAN UNIV OF TECH