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Perovskite-based X-ray detector with p-i-n structure and preparation method thereof

A p-i-n, photodetector technology, applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electric solid-state devices, etc., can solve problems such as high dark current, achieve high charge carrier mobility, optimize energy level matching relationship, The effect of high X-ray absorption efficiency

Pending Publication Date: 2021-12-21
SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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Problems solved by technology

[0005] The purpose of this application is to provide a p-i-n structure perovskite-based X-ray detector and its preparation method, aiming to solve the technical problem of high dark current of perovskite-based X-ray detectors to a certain extent

Method used

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  • Perovskite-based X-ray detector with p-i-n structure and preparation method thereof
  • Perovskite-based X-ray detector with p-i-n structure and preparation method thereof
  • Perovskite-based X-ray detector with p-i-n structure and preparation method thereof

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preparation example Construction

[0070] The second aspect of the embodiment of the present application provides a method for preparing a p-i-n structure perovskite-based X-ray detector, including the following steps:

[0071] S10. Obtain a conductive substrate, and prepare a first semiconductor layer on the conductive substrate;

[0072] S20. preparing a perovskite active layer on the surface of the first semiconductor layer away from the conductive substrate;

[0073] S30. Prepare a second semiconductor layer on the surface of the perovskite active layer away from the first semiconductor layer;

[0074] S40. Prepare a back electrode on the surface of the second semiconductor layer away from the perovskite active layer to obtain a p-i-n structure perovskite-based X-ray detector; wherein, the first semiconductor layer and the second semiconductor layer respectively contain p-type functional materials or n Type functional materials; the perovskite active layer contains a chemical formula of APbZ 3 A halide pe...

Embodiment 1

[0100] A p-i-n structure perovskite-based X-ray detector, the structure is as attached figure 2 Shown, its preparation comprises steps:

[0101] 1. Ni(NO 3 ) 2 ·6H 2 O (0.5mol) was dissolved in 100mL deionized water, by using NaOH solution (10molL -1 ) to adjust the pH of the solution system to 10 to obtain a colloidal precipitate; then, after washing twice with water, dry at 80° C. for 6 hours to obtain a green powder; and then calcinate at 270° C. for 2 hours to obtain a dark black nickel oxide nanocrystalline powder. Using water as a dispersant, configuring nickel oxide into a slurry with a mass fraction of 70% to obtain a nickel oxide slurry;

[0102] 2. On the conductive substrate of indium tin oxide ITO transparent glass, scrape-coat nickel oxide slurry, that is, the slurry of the p-type functional layer. The scraping speed is 10mm / s, and the height of the scraper is 30μm. The amount of scraping on the surface of the substrate is 100 μL / (1 inch×3 inch); then dry at...

Embodiment 2

[0107] A p-i-n structure perovskite-based X-ray detector, the difference between it and embodiment 1 is that the perovskite material used in step 3 is CH 2 (NH 3 ) 2 PB 3 .

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Abstract

The invention belongs to the technical field of photoelectricity, and particularly relates to a perovskite-based X-ray detector with a p-i-n structure and a preparation method thereof. The perovskite-based X-ray detector with the p-i-n structure comprises a p-type functional layer, a perovskite active layer and an n-type functional layer which are sequentially laminated and attached, wherein the perovskite active layer comprises halide perovskite with the chemical general formula of APbZ3, A comprises alkali metal ions or organic ammonium ions, and Z comprises at least one kind of halogen. According to the perovskite-based X-ray detector with the p-i-n structure, through the synergistic effect of the p-type functional layer, the perovskite active layer and the n-type functional layer, the dark current of a device can be effectively inhibited, the dark current density is smaller than or equal to 1 nA / cm < 2 >, and the perovskite-based X-ray detector has high detection sensitivity.

Description

technical field [0001] The application belongs to the field of optoelectronic technology, and in particular relates to a p-i-n structure perovskite-based X-ray detector and a preparation method thereof. Background technique [0002] An X-ray detector is a device that converts X-ray energy into electrical signals that can be recorded. In recent years, with the large-scale promotion and use of X-ray detectors, X-ray detectors have been used more and more in small security inspection equipment, industrial parts inspection, large container inspection, medical treatment and other fields. At present, X-ray detectors are mostly used as indirect conversion X-ray detectors using scintillators, which are usually composed of scintillators, detector chips, and substrates; the working principle is that X photons enter the scintillator and are converted into visible light The output enters the detector chip, and then the photoelectric conversion is performed by the detector chip to form ...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/48H01L51/46
CPCH10K71/10H10K85/00H10K30/10H10K2102/00Y02E10/549
Inventor 薛冬峰李云龙王晓明
Owner SHENZHEN INST OF ADVANCED TECH CHINESE ACAD OF SCI
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