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Composite structure for electrical connection of semiconductor element, manufacturing method thereof and semiconductor element

A composite structure, semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, semiconductor devices, etc., can solve problems such as spillover, decrease in bonding force between chips, affecting product reliability, etc., to avoid spillage. Effect

Pending Publication Date: 2022-01-11
POWERTECH TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the top surface of the conventional copper bumps is a flat surface, the solder balls in the slightly molten state tend to flow outward during the extrusion bonding process of the two copper bumps, resulting in overflow and short circuit, or Poor adhesion with solder paste leads to a decrease in the bonding force between chips, which affects the reliability of the product

Method used

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  • Composite structure for electrical connection of semiconductor element, manufacturing method thereof and semiconductor element
  • Composite structure for electrical connection of semiconductor element, manufacturing method thereof and semiconductor element
  • Composite structure for electrical connection of semiconductor element, manufacturing method thereof and semiconductor element

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Embodiment Construction

[0023] The present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.

[0024] The composite structure of the invention is suitable for the electrical connection between semiconductor elements, can prevent the solder from overflowing during the soldering process of the semiconductor elements, and can improve the adhesion of the joint.

[0025] refer to figure 1 An embodiment of the composite structure 20 for electrical connection of semiconductor elements of the present invention is formed on a semiconductor substrate 1 with a metal layer 121 on the surface, including bumps 2 , corrosion-resistant layer 3 , and patterned bonding layer 4 .

[0026] The semiconductor substrate 1 includes a substrate 11 having a conductive circuit 12 , and the metal layer 121 is formed on a surface of the conductive circuit 12 exposed on the substrate 11 and used for external electrical connection.

[0027] The bump 2 is disposed on the met...

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Abstract

A composite structure for electrical connection of semiconductor elements is disposed on a semiconductor substrate having a metal layer, and includes a bump formed on the metal layer, a corrosion resistant layer located on the top surface of the bump, and a patterned bonding layer formed on the corrosion resistant layer and having a plurality of regularly arranged protrusions and at least one groove, when the semiconductor substrate with the composite structure needs to be jointed with another semiconductor chip, a solder can be used as a bonding agent, and a part of the solder can enter the groove during jointing, so that the contact area of the solder and the composite structure can be increased to improve the bonding strength, the solder can be prevented from overflowing due to extrusion among the chips, and the reliability of the semiconductor chip is improved. And short circuit or damage of the semiconductor element is further caused. In addition, the invention also provides a manufacturing method of the composite structure and a semiconductor element using the composite structure as internal electrical connection.

Description

technical field [0001] The present invention relates to a composite structure for electrical connection of semiconductor elements and a manufacturing method thereof, and a semiconductor element containing the composite structure, in particular to a composite structure for electrical connection between semiconductor elements and a manufacturing method thereof, and a composite structure containing the same The semiconductor element of the composite structure. Background technique [0002] In today's semiconductor industry, three-dimensional integrated circuits (3D IC) are undergoing rapid development. Three-dimensional integrated circuits greatly reduce the lead connections between transistors by stacking chips. Among them, the bonding between chips or wafers has become a key technology. one. As the design of integrated circuits becomes more and more complex, metal bumps are often selected as components for bonding and electrical connection between chips. Among them, copper i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L23/488H01L21/60
CPCH01L24/13H01L24/11H01L24/16H01L2224/13006H01L2224/13015H01L2224/13023H01L2224/13083H01L2224/1161H01L2224/16148H01L25/0657H01L2225/06513H01L25/50H01L2224/13564H01L2224/13018H01L2224/1183H01L2224/14131H01L24/14H01L2224/16145H01L2224/81193H01L24/81H01L2224/0401H01L2224/13178H01L2224/13186H01L2224/13144H01L2224/13166H01L2224/05099H01L2224/1318H01L2224/13181H01L2224/13164H01L2224/13169H01L2224/13184H01L2224/056H01L2224/13155H01L2224/133H01L2224/13147H01L2924/05H01L2924/01046H01L2924/00013H01L2924/01028H01L2924/04941H01L2924/0132H01L2924/01022H01L2924/01074H01L2924/013H01L2924/0496H01L2924/01042H01L2924/0501H01L2924/01029H01L2924/04953H01L2924/01078H01L2924/00014H01L2924/014H01L2924/0103H01L2924/01047H01L2924/01051H01L2924/01083
Inventor 黄仕璋刘育成
Owner POWERTECH TECHNOLOGY
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