Si-based double-sided double-junction AlGaAs solar cell and preparation method thereof

A solar cell, double-sided technology, applied in the field of solar photovoltaic, can solve the problems of high cost, complicated preparation process, unsuitable for large-scale industrial production, etc., to reduce the preparation cost, the preparation process is simple, and it is beneficial to the popularization and popularization of large-scale industrialization Effect

Pending Publication Date: 2022-01-11
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the existing solar cell preparation technologies are mainly through metal-organic chemical vapor deposition (MOCVD) and molecul

Method used

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  • Si-based double-sided double-junction AlGaAs solar cell and preparation method thereof
  • Si-based double-sided double-junction AlGaAs solar cell and preparation method thereof
  • Si-based double-sided double-junction AlGaAs solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0055] Example 1:

[0056] like figure 1 As shown, the present invention provides a Si-based double-sided double-noded AlGaAs solar cell, including: n-type Si substrate 1 and an N-type AlGaAs functional layer 5;

[0057] The n-type Si substrate 1 is double-sided polished, and the upper and lower surfaces are doped to form P. + -Si layers 2 and N + -Si layer 3; the upper and lower surfaces of the n-type AlGaAs function layer 5 are doped to form n + -Algaas layer 6 and P + -Algaas layer 7, N + -AlgaAs layer 6 forms AlGaas tunnel knot 4, ALGAAS tunnel 4 nuts in P + -SI layer 2; p + -AlgaAs layer 7 is formed with a reflective film 10, an ohmic contact layer 11 and a front electrode 12, N + The Decimensional Film 10, the ohmic contact layer 11, and the back electrode 13 are formed on the -Si layer 3.

[0058] Among them, n-type AlGaAs functional layers 5, N + -Algaas layer 6, P + -Algaas layer 7 and AlGaas tunnel knots 4 is Al 0.10 GA 0.90 AS.

[0059] This preparation method includes:...

Example Embodiment

[0065] Example 2:

[0066] like figure 2 As shown, the present invention provides a Si-based double-sided double-noded AlGaAs solar cell, including: N-type Si substrate 1, N-type AlGaAs functional layer 5, and P-type AlgaaS functional layer 8;

[0067] The n-type Si substrate 1 is double-sided polished, and the upper and lower surfaces are doped to form P. + -Si layers 2 and N + -SI layer 3; P + -Si layer 2 sequentially grows there is a GaAs buffer layer 9, AlGaAs tunnel knot 4, N + -Algaas layer 6, N-type AlGaAs functional layer 5, P-type AlgaaS function layer 8, P + -Algaas layer 7; P + -AlgaAs layer 7 is formed with a reflective film 10, an ohmic contact layer 11 and a front electrode 12, N + The Decimensional Film 10, the ohmic contact layer 11, and the back electrode 13 are formed on the -Si layer 3.

[0068] Among them, n-type AlGaAs functional layers 5, N + -Algaas layer 6 and AlgaaS tunnel knots 4 is Al 0.20 GA 0.80 AS, P + -Algaas layer 7 and p-type AlgaaS function layer ...

Example Embodiment

[0078] Example 3:

[0079] like image 3 As shown, the present invention provides a Si-based double-sided double-noded AlGaAs solar cell, including: N-type Si substrate 1, N-type AlGaAs functional layer 5, and P-type AlgaaS functional layer 8;

[0080] The n-type Si substrate 1 is double-sided polished, and the upper and lower surfaces are doped to form P. + -Si layers 2 and N + -Si layer 3; the lower surface of the n-type AlGaAs function layer 5 is doped to form N, respectively. + -Algaas layer 6 and AlgaaS tunnel 4, Algaas tunnel 4 junction in P + -Si layer 2 ;; P-type AlGaAs function layer 8 is bonded to the upper surface of the n-type AlGaAs functional layer 5, and the upper surface doping form of the P-type AlGaAs functional layer 8 forms P + -Algaas layer 7; P + -AlgaAs layer 7 is formed with a reflective film 10, an ohmic contact layer 11 and a front electrode 12, N + The Decimensional Film 10, the ohmic contact layer 11, and the back electrode 13 are formed on the -Si layer...

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Abstract

The invention discloses a Si-based double-sided double-junction AlGaAs solar cell and a preparation method thereof. The Si-based double-sided double-junction AlGaAs solar cell comprises an N-type Si substrate and an N-type AlGaAs functional layer; the upper surface and the lower surface of the N-type Si substrate are doped to form a P +-Si layer and an N +-Si layer respectively; the upper surface and the lower surface of the N-type AlGaAs functional layer are doped to form an N +-AlGaAs layer and a P +-AlGaAs layer respectively, an AlGaAs tunnel junction is formed on the N +-AlGaAs layer, and the AlGaAs tunnel junction is bonded on the P +-Si layer; and an antireflection film, an ohmic contact layer and a front electrode are formed on the P < + >-AlGaAs layer, and an antireflection film, an ohmic contact layer and a back electrode are formed on the N < + >-Si layer. According to the invention, the double-sided Si-based solar cell is prepared through wafer bonding and impurity diffusion, so that the preparation cost of the solar cell can be reduced; and in addition, by adopting a wafer bonding mode, the problem of large lattice mismatch between AlGaAs and Si can be effectively solved, and the material performance of the device layer is improved.

Description

technical field [0001] The invention relates to the field of solar photovoltaic technology, in particular to a Si-based double-sided double-junction AlGaAs solar cell and a preparation method. Background technique [0002] Energy, from the industrial revolution to the modern information society, has always been the driving force for the progress and development of social civilization, driving the continuous development of the entire society. From the agricultural society to the industrial society, to today's information age, the development of energy is inseparable. The first energy used by human beings is wood that is easy to obtain on the ground. Further use of coal and oil, etc., the use of a large amount of coal, oil and other fossil fuels has brought a lot of carbon dioxide emissions, causing environmental pollution, greenhouse effect and sea level. A series of problems such as rising. At the same time, the total amount of non-renewable resources such as coal and oil ...

Claims

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Application Information

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IPC IPC(8): H01L31/068H01L31/0687H01L31/18
CPCH01L31/0684H01L31/0687H01L31/18Y02E10/544Y02E10/547Y02P70/50
Inventor 王智勇黄瑞兰天
Owner BEIJING UNIV OF TECH
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