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Near-infrared light-emitting material, preparation method and light-emitting device

A technology of light-emitting materials and light-emitting devices, applied in the directions of light-emitting materials, semiconductor devices, chemical instruments and methods, etc., can solve the problems of small spectral coverage, narrow half-peak width, etc., and achieve wide wavelength coverage, wide half-peak width, The effect of strong luminous intensity

Active Publication Date: 2022-07-19
深圳旭宇电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of this application is to provide a near-infrared luminescent material and its preparation method and light-emitting device, aiming to solve the technical problems of the existing infrared luminescent materials with small spectral coverage and narrow half-peak width

Method used

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  • Near-infrared light-emitting material, preparation method and light-emitting device
  • Near-infrared light-emitting material, preparation method and light-emitting device
  • Near-infrared light-emitting material, preparation method and light-emitting device

Examples

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preparation example Construction

[0049] A second aspect of the embodiments of the present application provides a method for preparing a near-infrared light-emitting material, and the preparation method includes the following steps:

[0050] S01: Chemical formula A of the above-mentioned near-infrared light-emitting material according to the embodiment of the present application x D y O 4 :R m The compound raw materials of each element are weighed in the stoichiometric ratio, and then ground to obtain the raw material mixture;

[0051] S02: sintering the raw material mixture to obtain a near-infrared light-emitting material.

[0052] The preparation method of the near-infrared light-emitting material provided by the embodiments of the present application is simple in process, easy to obtain raw materials, and the finally prepared near-infrared light-emitting material has a long fluorescence lifetime, and has the characteristics of wide wavelength coverage, wide half-peak width and strong luminous intensity ...

Embodiment 1

[0065] This embodiment provides a broadband emitting near-infrared light-emitting material, and the compound formula is Al 0.98 TaO 4 : 0.02Cr. The preparation method includes the following steps:

[0066] According to the chemical formula Al 0.98 TaO 4 : Stoichiometric ratio of 0.02Cr, accurate weighing of Al 2 O 3 , Ta 2 O 5 , Cr 2 O 3 The raw materials are placed in the grinding, and after grinding for 30 minutes, they are transferred into an alumina crucible, sintered at 1450 °C for 6 hours in a high-temperature furnace air atmosphere, and cooled to room temperature with the furnace. Finally, a broadband near-infrared luminescent material with relatively uniform particle size is obtained.

[0067] The luminescent material obtained in this example is characterized and analyzed by a fluorescence spectrometer, and its emission spectrum is obtained under excitation at 460 nm, such as figure 1 As shown, the peak wavelength of the emission spectrum is 810 nm, and the ...

Embodiment 2

[0069] This embodiment provides a broadband emitting near-infrared light-emitting material, and the compound formula is Al 0.992 NbO 4 : 0.008Cr. The preparation method includes the following steps:

[0070] According to the chemical formula Al 0.992 NbO 4 : Stoichiometric ratio of 0.008Cr, accurate weighing of Al 2 O 3 , Nb 2 O 5 , Cr 2 O 3 The raw materials are placed in the grinding, and after grinding for 30 minutes, they are transferred into an alumina crucible, sintered at 1400 °C for 6 hours in a high-temperature furnace air atmosphere, and cooled to room temperature with the furnace. Finally, a broadband near-infrared luminescent material with relatively uniform particle size is obtained.

[0071]The luminescent material obtained in this example was characterized and analyzed by a fluorescence spectrometer, and its emission spectrum was obtained under excitation at 460 nm, as shown in the following figure: image 3 As shown, the peak wavelength of the emissi...

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Abstract

The present application relates to the technical field of light-emitting materials, and in particular, to a near-infrared light-emitting material, a preparation method thereof, and a light-emitting device. The general chemical formula of the near-infrared light-emitting material is A x D y O 4 :R m wherein, A is selected from at least one of B, Al, Ga and In elements; D is selected from at least one of V, Nb and Ta elements; R is selected from at least one of Cr and Yb elements, and must be Contains Cr element; O is oxygen element; and, 0<x≤1.2, 0<y≤1.2, 0.0000001≤m≤0.2. The excitation spectrum of the near-infrared light-emitting material covers the blue-violet region and the red region, and is suitable for excitation of blue light and red light chips; the emission spectrum of the near-infrared light-emitting material after being excited covers the near-infrared band of 640-1000 nm, and has a wide wavelength coverage. , with wide peak width at half maximum and strong luminous intensity.

Description

technical field [0001] The present application belongs to the technical field of luminescent materials, and in particular relates to a near-infrared luminescent material, a preparation method thereof, and a luminescent device. Background technique [0002] Near Infrared (NIR) is an invisible light between visible light (VIS) and mid-infrared light (MIR). Near-infrared light analysis technology contains chemical bond information such as C-H, O-H and N-H. Therefore, the characteristic information of the above-mentioned hydrogen-containing groups in the sample can be obtained by scanning the near-infrared spectrum of the sample, thereby realizing the analysis of the material structure. In addition, based on the long wavelength of near-infrared light, it has the advantages of convenience, efficiency, accuracy, low cost, and non-destructive testing. It has great advantages in the analysis of biological tissues and organic materials. Imaging, facial recognition and other fields a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/67C09K11/69C09K11/62H01L33/50
CPCC09K11/685C09K11/681C09K11/691C09K11/7701C09K11/7708H01L33/502
Inventor 林金填杜甫陈磊赵文蔡瑜李金月
Owner 深圳旭宇电子有限公司
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