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Core-shell structure quantum dot, preparation method thereof and display device comprising core-shell structure quantum dot

A core-shell structure, quantum dot technology, applied in the field of quantum dots, can solve the problems of poor blue light absorption, non-compliance with environmental protection requirements, poor stability, etc. of InP, and achieve improved light conversion efficiency, high production efficiency and low preparation cost. Effect

Pending Publication Date: 2022-01-21
SUZHOU XINGSHUO NANOTECH CO LTD
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  • Application Information

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Problems solved by technology

[0003] At present, cadmium-based quantum dots have gradually begun to be commercialized due to their advantages of high quantum efficiency, small half-peak width, strong blue light absorption, and good stability. Environmental protection requirements, so the development of new cadmium-free quantum dots is extremely urgent
However, compared with the commonly used cadmium-based quantum dots, InP in the prior art has many shortcomings such as poor blue light absorption, wide half-maximum width, and poor stability, which limits its application.

Method used

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  • Core-shell structure quantum dot, preparation method thereof and display device comprising core-shell structure quantum dot
  • Core-shell structure quantum dot, preparation method thereof and display device comprising core-shell structure quantum dot
  • Core-shell structure quantum dot, preparation method thereof and display device comprising core-shell structure quantum dot

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preparation example Construction

[0041] The present application also provides a method for preparing quantum dots with a core-shell structure, comprising the steps of:

[0042] S1. Provide a core body or an initial quantum dot, wherein the initial quantum dot includes a core body and a first shell covering the outer surface of the core body;

[0043] It should be noted that the core body and the first shell layer can be prepared by conventional methods in the prior art, which is not limited in this application.

[0044] S2. After mixing the indium precursor with the nuclei or the initial quantum dots, add a selenium precursor or a selenium precursor and a sulfur precursor at 140-320° C. A light-absorbing shell layer is formed on the point, and the light-absorbing shell layer is a compound containing indium element and selenium element.

[0045] Coating the light-absorbing shell layer of the compound containing indium element and selenium element on the core body can significantly improve the OD450 of the cor...

Embodiment 1

[0058] Take 0.5g of green light InP quantum dot core, add it to 20mL of oleylamine, vacuumize at 120°C for 30 minutes, convert to argon, raise the temperature to 180°C, add 10mL of oleylamine solution containing 0.2M triethylindium, drop Add TOP-Se, 2mL / h, dropwise in 30 minutes. Raise the temperature to 240°C, add 20mL octadecene solution containing 0.4M zinc stearate, add TOP-Se dropwise, 4mL / h, dropwise in 60 minutes, raise the temperature to 320°C, add 20mL stearic acid containing 0.4M Zinc octadecene solution, drop TOP-S, 4mL / h, 60 minutes to complete the dropwise addition. Cool down to 240°C, add 40mL octadecene solution containing 0.4M zinc stearate, add dodecyl mercaptan dropwise, 4mL / h, add dropwise in 120 minutes, and obtain InP / In after cooling down and purification 2 Se 3 / ZnSe / ZnS core-shell quantum dots, where In 2 Se 3 The weight percent composition is 13%.

Embodiment 2

[0059] Embodiment 2 (increase the amount of triethyl indium)

[0060] Take 0.5g of green light InP quantum dot core, add it to 20mL of oleylamine, vacuumize at 120°C for 30 minutes, turn it into argon, raise the temperature to 180°C, add 20mL of oleylamine solution containing 0.2M triethylindium, drop Add TOP-Se, 4mL / h, and add dropwise in 30 minutes. Raise the temperature to 240°C, add 20mL octadecene solution containing 0.4M zinc stearate, add TOP-Se dropwise, 4mL / h, dropwise in 60 minutes, raise the temperature to 320°C, add 20mL stearin containing 0.4M Zinc acid octadecene solution, drop TOP-S, 4mL / h, 60 minutes to complete the dropwise addition. Cool down to 240°C, add 40mL octadecene solution containing 0.4M zinc stearate, add dodecyl mercaptan dropwise, 4mL / h, add dropwise in 120 minutes, and obtain InP / In after cooling down and purification 2 Se 3 / ZnSe / ZnS core-shell quantum dots, where In 2 Se 3 The weight percent composition is 26%.

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Abstract

The invention provides a core-shell structure quantum dot, a preparation method thereof and a display device comprising the core-shell structure quantum dot, the core-shell structure quantum dot comprises a core body and a light absorption shell layer, and the light absorption shell layer is a compound containing an indium element and a selenium element; according to the core-shell structure quantum dot, the blue light absorbance can be effectively enhanced, the quantum efficiency of the core-shell structure quantum dot can be improved, and the low half-peak width is reduced.

Description

technical field [0001] The application belongs to the technical field of quantum dots, and in particular relates to a quantum dot with a core-shell structure, a preparation method thereof, and a display device including the quantum dot. Background technique [0002] Quantum dots, also known as semiconductor nanocrystals, are a new type of semiconductor nanomaterial with a size of 1-10nm. Due to the quantum size effect and dielectric confinement effect, they have unique photoluminescence (PL) and electroluminescence (EL) properties. Compared with traditional organic fluorescent dyes, quantum dots have high quantum yield, high photochemical stability, not easy to photolysis, wide excitation, narrow emission, high color purity, luminous color can be adjusted by controlling the size of quantum dots, etc. Optical properties have broad application prospects in the field of display technology. [0003] At present, cadmium-based quantum dots have gradually begun to be commercializ...

Claims

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Application Information

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IPC IPC(8): C09K11/88B82Y20/00B82Y40/00B82Y30/00H01L51/50
CPCC09K11/883B82Y20/00B82Y40/00B82Y30/00H10K50/115
Inventor 曹越峰单玉亮曹佳佳杨涵妮乔登清张思源
Owner SUZHOU XINGSHUO NANOTECH CO LTD
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