Diamond through hole array structure and preparation method and application thereof

Abstract

The invention discloses a diamond through hole array structure as well as a preparation method and application thereof. The diamond through hole array structure comprises diamonds with a preset thickness; the diamond is provided with a through hole array, through holes of the through hole array are filled with electrodes, and the electrodes are used for achieving short vertical electrical interconnection of the upper surface and the lower surface of the diamond. According to the structure, the heat dissipation performance of the device can be improved by utilizing the characteristic of ultrahigh heat conductivity of the diamond, short vertical interconnection of the upper chip layer and the lower chip layer can be realized by injecting an electrode material into the through holes of the diamond, and better electrical performance and integration density of the diamond chip are improved.

Description

technical field [0001] The invention belongs to the technical field of materials and microelectronics, relates to the technical field of three-dimensional packaging of devices, and in particular relates to a diamond through-hole array structure and a preparation method and application thereof. Background technique [0002] With the rapid development of microelectronics technology and the entry of communication technology into the 5G era, electronic devices are gradually deepening in the direction of high frequency, high temperature, high power, and high integration; among them, improving the integration of electronic devices and improving the heat dissipation of devices are the current research and development of semiconductor device technology There are two major problems to focus on. Limited by physical limits, three-dimensional integrated packaging technology represented by through-silicon via (TSV) technology has become the mainstream technology for improving the integra...

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Problems solved by technology

[0003] The existing diamond substrate devices can only realize the electrical interconnection between chips through the long lead interconnection in 2D packaging. The electrical performance and integration density of diamond chips are poor; at the same time, due to its high hardness and corrosion resistance, diamond is very difficult Difficult to fabricate through-hole microstructures with high efficiency and high quality

At present, the common methods for preparing diamond vias include dry etching methods such as focused ion beam etching and reactive ion etching, and continuous laser processing; however, dry etching technology has expensive equipment, low processing efficiency, and complicated processing steps; continuous laser processing generally The pore structure has defects such as rough morphology

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