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Etching solution for ITO/Ag/ITO composite metal layer film

A technology of composite metal layer and etching solution, applied in the field of etching solution, can solve the problems of affecting the etching effect, Ag and ITO residue residues, glycerol and ethylene glycol viscosity increase, etc., so as to slow down the silver etching rate and improve the etching efficiency. Effect

Active Publication Date: 2022-01-25
易安爱富武汉科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in practical applications, the viscosity of glycerin and ethylene glycol is significantly affected by temperature. An increase in temperature will increase the viscosity of glycerin and ethylene glycol, which will lead to the volatilization of local acetic acid and the decomposition of nitrous acid generated, which will affect the etching effect and easily cause Ag and ITO residue residues

Method used

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  • Etching solution for ITO/Ag/ITO composite metal layer film
  • Etching solution for ITO/Ag/ITO composite metal layer film
  • Etching solution for ITO/Ag/ITO composite metal layer film

Examples

Experimental program
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Effect test

Embodiment 1

[0028] The present embodiment provides a kind of etching solution of ITO / Ag / ITO composite metal layer thin film, take weight percentage as 100%, and described etching solution comprises phosphoric acid 20%, nitric acid 8%, sulfuric acid 3%, acetic acid 20%, inhibition 2% detergent, 1.5% cleaning agent and 5% surfactant, and the balance is pure water; the inhibitor includes inorganic potassium salt and organic phosphonic acid sodium salt; the cleaning agent is cellulose cross-linked polymer.

[0029] The inorganic potassium salts are potassium chloride and potassium nitrate.

[0030] The organic phosphonic acid sodium salt is disodium hydroxyethylidene diphosphonate and pentasodium ethylenediamine tetramethylene phosphonate.

[0031] The surfactant is oleic acid amidopropyl dimethyl amine oxide.

[0032] The cellulose cross-linked polymer is obtained by cross-linking cellulose and polycarboxylic acid compounds.

[0033] The cellulose is hydroxyethyl cellulose.

[0034] The p...

Embodiment 2

[0040] The present embodiment provides a kind of etching solution of ITO / Ag / ITO composite metal layer thin film, calculates as 100% by weight percentage, and described etching solution comprises phosphoric acid 50%, nitric acid 3%, sulfuric acid 1%, acetic acid 10%, inhibition 0.5% detergent, 0.1% cleaning agent and 3% surfactant, and the balance is pure water; the inhibitor includes inorganic potassium salt and organic phosphonic acid sodium salt; the cleaning agent is cellulose cross-linked polymer.

[0041] The inorganic potassium salt is one or more combinations of potassium chloride and potassium acetate.

[0042] The organic phosphonic acid sodium salt is pentasodium diethylenetriamine pentamethylene phosphonate and tetrasodium 2-phosphonic acid butane-1,2,4-tricarboxylate.

[0043] The surfactant is oleic amidopropyl dimethyl amine oxide and polyisobutylene succinimide.

[0044] The cellulose cross-linked polymer is obtained by cross-linking cellulose and polycarboxyli...

Embodiment 3

[0052] The present embodiment provides a kind of etching solution of ITO / Ag / ITO composite metal layer thin film, is calculated as 100% by weight percentage, and described etching solution comprises phosphoric acid 30%, nitric acid 4%, sulfuric acid 2%, acetic acid 13%, inhibition 1% detergent, 0.8% cleaning agent and 4% surfactant, and the balance is pure water; the inhibitor includes inorganic potassium salt and organic phosphonic acid sodium salt; the cleaning agent is cellulose cross-linked polymer.

[0053] The inorganic potassium salt is potassium acetate.

[0054]The organic phosphonic acid sodium salts are disodium hydroxyethylidene diphosphonate, pentasodium ethylenediamine tetramethylene phosphonate and tetrasodium 2-phosphonic acid butane-1,2,4-tricarboxylate.

[0055] The surfactant is oleic amidopropyl dimethyl amine oxide, lauryl ether phosphate and polyisobutylene succinimide.

[0056] The cellulose cross-linked polymer is obtained by cross-linking cellulose and...

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Abstract

The invention provides an etching solution for an ITO / Ag / ITO composite metal layer film, which comprises the following components in percentage by weight: 20-50% of phosphoric acid, 3-8% of nitric acid, 1-3% of sulfuric acid, 10-20% of acetic acid, 0.5-2% of an inhibitor, and 0.1-1.5% of a cleaning agent, with the balance being pure water. The inhibitor comprises inorganic potassium salt and organic sodium phosphonate; the cleaning agent is a cellulose cross-linked polymer, and the cellulose cross-linked polymer is obtained by cross-linking cellulose and a polycarboxylic acid compound. The cellulose cross-linked polycarboxylic acid compound contains a large amount of carboxyl, hydroxyl and polymerized olefine acid; on one hand, the cellulose cross-linked polycarboxylic acid compound is chelated with silver ions, so that the silver ions are precipitated, and the silver etching rate can be reduced, and on the other hand, after the cellulose cross-linked polymer is chelated with the silver ions and ITO, metal ions are separated from a solution while precipitates are formed, so that Ag and ITO residues after etching are effectively removed.

Description

technical field [0001] The invention relates to the field of etching solution, in particular to an etching solution for an ITO / Ag / ITO composite metal layer film. Background technique [0002] Transflective high-conductivity films are important electrode materials in the field of liquid crystal displays, and new transflective high-conductivity films have become an indispensable material in the field of flat panel displays. The material is generally a high-performance transflective high-conductivity thin film ITO / Ag / ITO prepared by compounding high-reflection, high-conductivity metal Ag and transparent conductive oxide ITO multilayer. In the existing ITO / Ag / ITO multilayer During the preparation of the thin film, it is necessary to etch the ITO / Ag / ITO to obtain the desired pattern or structural unit. [0003] Due to the slow etching speed of the ITO layer and the fast etching speed of the Ag layer, the etching often occurs incompletely, and the ITO / Ag / ITO composite metal film ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/06
CPCC09K13/06
Inventor 李泰亨申阳高峰苗发虎白晓鹏
Owner 易安爱富武汉科技有限公司