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Bismuth-based liquid metal with melting point lower than 50 DEG C and preparation method thereof

A liquid metal, bismuth-based technology is applied in the field of bismuth-based liquid metal and its preparation, which can solve the problems of unreachable, and achieve the effects of clear components and simple experiments.

Inactive Publication Date: 2022-01-25
YANSHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the melting point of bismuth-based liquid metals is far from being able to adapt to various complex applications, so the development of bismuth-based liquid metals with lower melting points is an urgent requirement

Method used

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  • Bismuth-based liquid metal with melting point lower than 50 DEG C and preparation method thereof
  • Bismuth-based liquid metal with melting point lower than 50 DEG C and preparation method thereof
  • Bismuth-based liquid metal with melting point lower than 50 DEG C and preparation method thereof

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preparation example Construction

[0036] The preparation method of the liquid metal in following embodiment, comparative example, comprises the following steps:

[0037] (1) Weigh a suitable pure metal sample, the selected pure metal sample purity is 99.99%, then polish the surface oxide layer with 800# sandpaper, then it is packed into the sample bag filled with dehydrated alcohol, Put it into Jiemeng JP-010S ultrasonic cleaning machine for cleaning. The cleaned samples were dried and then put into reaction vessels in the order of cadmium, zinc, bismuth, lead and indium.

[0038] (2) Fill high-purity nitrogen into the reaction vessel (a quartz test tube with an inner diameter of 9 mm, an outer diameter of 12 mm, and a height of 29 cm), and use a sealing machine [Partulab MRVS-1002; purchased from Bailibo Technology (China)] to vacuum seal tube processing. The specific operation is: put the test tube containing the sample into the tube sealing machine, turn on the mechanical pump, then turn on the vacuum pum...

Embodiment 1

[0043] Liquid metal is (Bi 43 sn 15.4 In 21.6 Pb 20 ) 93 Cd 7 (mass parts: 40.0 parts of bismuth, 20.1 parts of indium, 18.6 parts of lead, 14.3 parts of tin, 7 parts of cadmium), its preparation method comprises the following steps:

[0044] (1) Weigh a pure metal sample with a total mass of about 5g, then polish the surface oxide layer with 800# sandpaper, put it into a sample bag filled with absolute ethanol, and put it into an ultrasonic cleaner for cleaning. Dry and clean the samples, and then put them into the reaction vessel in the order of cadmium, zinc, bismuth, lead, and indium.

[0045] (2) Inert gas is filled into the reaction vessel (a quartz test tube with an inner diameter of 9mm, an outer diameter of 12mm, and a height of 29cm), and a tube sealing machine is used to vacuumize and seal the tube with a vacuum degree of 0.01Pa. Gas scrubbing was repeated at least 3 times, and high-purity nitrogen was filled after scrubbing to build a protective atmosphere; t...

Embodiment 2

[0050] Liquid metal is (Bi 43 sn 15.4 In 21.6 Pb 20 ) 90 Cd 10 (mass parts: 38.7 parts of bismuth, 19.4 parts of indium, 18 parts of lead, 13.9 parts of tin, 10 parts of cadmium), its preparation method comprises the following steps:

[0051] (1) Weigh a pure metal sample with a total mass of about 5g, then polish the surface oxide layer with 800# sandpaper, put it into a sample bag filled with absolute ethanol, and put it into an ultrasonic cleaner for cleaning. Dry and clean the samples, and then put them into the reaction vessel in the order of cadmium, zinc, bismuth, lead, and indium.

[0052] (2) Inert gas is filled into the reaction vessel (a quartz test tube with an inner diameter of 9mm, an outer diameter of 12mm, and a height of 29cm), and a tube sealing machine is used to vacuumize and seal the tube with a vacuum degree of 0.01Pa. Gas scrubbing was repeated at least 3 times, and high-purity nitrogen was filled after scrubbing to build a protective atmosphere; t...

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Abstract

The invention discloses bismuth-based liquid metal with the melting point lower than 50 DEG C and a preparation method thereof. The bismuth-based liquid metal comprises the following components including, by mass, 35-40 parts of bismuth, 10-15 parts of tin, 15-21 parts of indium, 15-20 parts of lead and 5-10 parts of cadmium. The proportion of alloy components is adjusted in an alloying manner, the quinary bismuth-based liquid metal BiSnInPbCd is prepared, and the component proportion is clear. The alloy is subjected to simple vacuum melting through the pipe sealing technology so that the alloy can be evenly melted, it can be guaranteed that the component proportion of the smelted alloy is consistent with the initial adding proportion, the preparation mode is simple and convenient and is a preparation mode which can guarantee good performance and high repeatability of the liquid metal, and the melting point of the bismuth-based liquid metal is 46-47 DEG C.

Description

technical field [0001] The invention relates to the technical field of bismuth-based liquid metal, in particular to a bismuth-based liquid metal with a melting point lower than 50°C and a preparation method thereof. Background technique [0002] With the development of science and technology, liquid metals are developing rapidly, especially in electronic printing, high-density heat dissipation, flexible antennas, liquid robots, etc., which have significant advantages. Among them, bismuth (Bi)-based liquid metal has gradually appeared in people's field of vision as a new type of multifunctional material, because it takes into account the characteristics of metal and liquid and has a higher melting point than gallium, making it suitable for electrical and thermal conductivity and 3D printing applications. Show unparalleled advantages. Compared with gallium-based liquid metals, bismuth-based liquid metals have a higher melting point and are solid at room temperature, which mak...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C30/04C22C1/02
CPCC22C12/00C22C30/04C22C1/02
Inventor 冯士东王利民杜前湫关子横
Owner YANSHAN UNIV
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