A kind of soi device resistant to total dose irradiation and preparation method thereof
An anti-total dose and device technology, applied in the direction of electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of limited protection ability, complex coating process, lead toxicity, etc., achieve excellent structural characteristics, simplify Preparation process, effect of shielding total dose effect
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Embodiment 1
[0044] The Mxene etching was completed using method 1 (hydrofluoric acid etching), and then the Mxene was transferred into the chamber of the atomic layer deposition apparatus and subjected to high Z metal oxide HfO 2 Coating modification. The reaction temperature should be controlled at 200 °C, the pressure during the reaction should be controlled at 0.155torr, and the high-Z metal oxide source should be [(CH 3 )C 2 H 5 )N] 4 Hf, the pulse time is 0.15s, and the reaction time is 6s. After the pulse and the reaction are completed, high-purity nitrogen (99.999%) is used to purge the residual reactants and by-products in the pipeline and chamber for 60s. Then high-purity water was used as the oxygen source, the pulse time was 0.015s, and the reaction time was 6s. After the pulse reaction was completed, high-purity nitrogen (99.999%) was used to purge the residual reactants and by-products in the pipeline and chamber for 60s. The high-Z metal oxide source and the oxygen sourc...
Embodiment 2
[0047] Example 2: The Mxene etching was completed by method 2 (HCl+LiF etching), and then the Mxene was transferred to the cavity of the atomic layer deposition device, and the high Z metal oxide HfO was carried out on it. 2 Coating modification. The reaction temperature should be controlled at 150°C, the pressure during the reaction should be controlled at 0.155torr, and the high-Z metal oxide source should be [(CH 3 )C 2 H 5 )N] 4 Hf, the pulse time is 0.15s, and the reaction time is 6s. After the pulse and the reaction are completed, high-purity nitrogen (99.999%) is used to purge the residual reactants and by-products in the pipeline and chamber for 60s. Then high-purity water was used as the oxygen source, the pulse time was 0.015s, and the reaction time was 6s. After the pulse reaction was completed, high-purity nitrogen (99.999%) was used to purge the residual reactants and by-products in the pipeline and chamber for 60s. The high-Z metal oxide source and the oxygen...
Embodiment 3
[0049] Example 3: The Mxene etching was completed by method 3 (NaOH hydrothermal etching), and then the Mxene was transferred to the cavity of the atomic layer deposition device, and the high Z metal oxide HfO was carried out on it. 2 Coating modification. The reaction temperature should be controlled at 180°C, the pressure during the reaction should be controlled at 0.155torr, and the high-Z metal oxide source should be [(CH 3 )C 2 H 5 )N] 4 Hf, the pulse time is 0.15s, and the reaction time is 6s. After the pulse and the reaction are completed, high-purity nitrogen (99.999%) is used to purge the residual reactants and by-products in the pipeline and chamber for 60s. Then high-purity water was used as the oxygen source, the pulse time was 0.015s, and the reaction time was 6s. After the pulse reaction was completed, high-purity nitrogen (99.999%) was used to purge the residual reactants and by-products in the pipeline and chamber for 60s. The high-Z metal oxide source and ...
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