A kind of soi device resistant to total dose irradiation and preparation method thereof

An anti-total dose and device technology, applied in the direction of electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of limited protection ability, complex coating process, lead toxicity, etc., achieve excellent structural characteristics, simplify Preparation process, effect of shielding total dose effect

Active Publication Date: 2022-07-12
HARBIN INST OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the total dose effect shielding is usually completed by metals such as lead or materials alternately laminated with some low-Z metals. However, due to its high density and high mass, lead increases the load of the overall structure in some applications. At the same time, lead has certain toxicity and is harmful to humans and the environment.
However, the current high-low-Z alternate lamination coating process is complex, requiring multiple coatings and drying, which takes a long time and has limited protection capabilities.
Moreover, another limitation of the materials currently used is that they basically have a certain shape and strength, and it may not be possible to achieve some flexibility if they want to

Method used

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  • A kind of soi device resistant to total dose irradiation and preparation method thereof
  • A kind of soi device resistant to total dose irradiation and preparation method thereof
  • A kind of soi device resistant to total dose irradiation and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0044] The Mxene etching was completed using method 1 (hydrofluoric acid etching), and then the Mxene was transferred into the chamber of the atomic layer deposition apparatus and subjected to high Z metal oxide HfO 2 Coating modification. The reaction temperature should be controlled at 200 °C, the pressure during the reaction should be controlled at 0.155torr, and the high-Z metal oxide source should be [(CH 3 )C 2 H 5 )N] 4 Hf, the pulse time is 0.15s, and the reaction time is 6s. After the pulse and the reaction are completed, high-purity nitrogen (99.999%) is used to purge the residual reactants and by-products in the pipeline and chamber for 60s. Then high-purity water was used as the oxygen source, the pulse time was 0.015s, and the reaction time was 6s. After the pulse reaction was completed, high-purity nitrogen (99.999%) was used to purge the residual reactants and by-products in the pipeline and chamber for 60s. The high-Z metal oxide source and the oxygen sourc...

Embodiment 2

[0047] Example 2: The Mxene etching was completed by method 2 (HCl+LiF etching), and then the Mxene was transferred to the cavity of the atomic layer deposition device, and the high Z metal oxide HfO was carried out on it. 2 Coating modification. The reaction temperature should be controlled at 150°C, the pressure during the reaction should be controlled at 0.155torr, and the high-Z metal oxide source should be [(CH 3 )C 2 H 5 )N] 4 Hf, the pulse time is 0.15s, and the reaction time is 6s. After the pulse and the reaction are completed, high-purity nitrogen (99.999%) is used to purge the residual reactants and by-products in the pipeline and chamber for 60s. Then high-purity water was used as the oxygen source, the pulse time was 0.015s, and the reaction time was 6s. After the pulse reaction was completed, high-purity nitrogen (99.999%) was used to purge the residual reactants and by-products in the pipeline and chamber for 60s. The high-Z metal oxide source and the oxygen...

Embodiment 3

[0049] Example 3: The Mxene etching was completed by method 3 (NaOH hydrothermal etching), and then the Mxene was transferred to the cavity of the atomic layer deposition device, and the high Z metal oxide HfO was carried out on it. 2 Coating modification. The reaction temperature should be controlled at 180°C, the pressure during the reaction should be controlled at 0.155torr, and the high-Z metal oxide source should be [(CH 3 )C 2 H 5 )N] 4 Hf, the pulse time is 0.15s, and the reaction time is 6s. After the pulse and the reaction are completed, high-purity nitrogen (99.999%) is used to purge the residual reactants and by-products in the pipeline and chamber for 60s. Then high-purity water was used as the oxygen source, the pulse time was 0.015s, and the reaction time was 6s. After the pulse reaction was completed, high-purity nitrogen (99.999%) was used to purge the residual reactants and by-products in the pipeline and chamber for 60s. The high-Z metal oxide source and ...

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Abstract

An SOI device resistant to total dose irradiation and a preparation method thereof belong to the field of radiation protection materials. The present invention solves the problems that the current high and low Z alternately laminated coating process is complicated, needs to be coated and dried for many times, takes a long time, and has limited protection capability; it also cannot realize the technical problem of flexibility. In the present invention, the MAX phase ceramic matrix is ​​etched to obtain a layered structure of Ti 3 C 2 T x Then, the high-Z metal is deposited into the Mxene layered structure by atomic layer deposition technology to obtain the composite material, and the composite material is mixed with the resin matrix and then coated on the surface of the SOI device to obtain the radiation protection coating. The material of the present invention can be used for radiation protection suits in daily life, medical aspects, and required and protective fields in nuclear reactions.

Description

technical field [0001] The invention belongs to the field of radiation protection materials, and in particular relates to an SOI device resistant to total dose irradiation and a preparation method thereof. Background technique [0002] The total dose effect refers to the degradation of device performance due to trapped charges induced in the oxide layer by radiation. For SOI devices, radiation not only generates trapped charges and interface state charges in the gate oxide, but also in other dielectrics such as field isolation oxides and buried oxides. These radiation-induced charges will increase the off-state leakage and edge leakage of the device, resulting in increased static power consumption and even functional failure of the integrated circuit. Therefore, only by solving the problem of total dose-resistance reinforcement of SOI materials and devices can we remove obstacles for the military application of SOI technology and better apply it in radiation-hardened microe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/552G21F1/02G21F1/12
CPCH01L23/552G21F1/02G21F1/12
Inventor 吴晓宏李杨秦伟卢松涛洪杨
Owner HARBIN INST OF TECH
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