Crystal silicon solar cell variable-temperature diffusion furnace

Abstract

The invention discloses a crystal silicon solar cell variable-temperature diffusion furnace, and relates to the technical field of diffusion furnaces. The crystal silicon solar cell variable-temperature diffusion furnace comprises a furnace body, a furnace opening is formed in the furnace body, a furnace door used for sealing the furnace opening is hinged to the portion, on one side of the furnace opening, of the furnace body, the furnace opening is arranged in a circular shape, a sealing piece, an auxiliary isolation piece and a locking piece are arranged on the furnace door, and the sealing piece comprises a fixing ring formed on the furnace door. The fixing ring is externally connected with a sealing ring with the same shape as the furnace opening in a slip connection manner, and the sealing ring is used for slipping and clamping the furnace opening and sealing the furnace opening when the furnace door is sealed. According to the diffusion furnace, when the furnace door of the diffusion furnace is closed, the sealing mechanism is driven by the linkage piece to synchronously seal the furnace opening, on one hand, the heat insulation performance when the furnace opening is sealed is improved, heat dissipation is avoided, it is guaranteed that the temperature in the furnace body rapidly increases and maintains balance, on the other hand, the air tightness of the furnace opening position can be improved, and therefore leakage of harmful gas generated by silicon wafers or other elements after high temperature treatment in the furnace body is prevented.

Description

technical field [0001] The invention relates to the technical field of diffusion furnaces, in particular to a temperature-variable diffusion furnace for crystalline silicon solar cells. Background technique [0002] Diffusion furnace is one of the important process equipment in the pre-process of semiconductor production line. It is used for diffusion, oxidation, annealing, alloying and sintering processes in industries such as large-scale integrated circuits, discrete devices, power electronics, optoelectronic devices and optical fibers. Its main purpose is to dope semiconductors, that is, to diffuse dopant materials into silicon wafers under high temperature conditions, so as to change and control the type, concentration and distribution of impurities in semiconductors, so as to establish regions with different electrical characteristics. [0003] Although some processes can be doped by ion implantation, thermal diffusion is still the most important and common doping metho...

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Problems solved by technology

[0006] Although this silicon wafer heating diffusion furnace can achieve the effect of heat preservation on the furnace mouth and the furnace tail, preventing its heat dissipation from causing the furnace mouth, but when this diffusion furnace is in use, the furnace mouth is not closed well enough due to the existence of the furnace door. It is easy to cause heat dissipation during the production process. At the same time, due to high temperature conditions, silicon wafers are prone to generate harmful gases and leak from the furnace door, which will cause certain damage to the health of operators.

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