Silicon carbide single crystal and growth device and preparation method thereof

Abstract

The invention discloses a silicon carbide single crystal and a growth device and a preparation method thereof. The growth device of the silicon carbide single crystal comprises a growth crucible, an inner crucible and a flow guide cylinder. A seed crystal is arranged at the top of the growth crucible. The inner crucible is positioned at the bottom in the growth crucible, and the cross sectional area of the inner crucible is reduced from top to bottom. The flow guide cylinder is arranged in the growth crucible and located between the inner crucible and the seed crystal, the flow guide cylinder is arranged around the inner wall of the growth crucible, the inner wall of the flow guide cylinder is in an arc shape, and the inner crucible and the flow guide cylinder are matched to form a gas transmission drainage channel. Therefore, by adopting the growth device, the edge defect of a silicon carbide single crystal can be effectively improved, so that a high-quality silicon carbide single crystal is obtained.

Description

technical field [0001] The invention belongs to the field of single crystals, and in particular relates to a silicon carbide single crystal, a growth device and a preparation method thereof. Background technique [0002] Silicon carbide (SiC) single crystal material is a relatively mature wide-bandgap semiconductor material, which is widely used in high-voltage, high-frequency, high-power and high-temperature-resistant fields. At present, the proportion of silicon carbide power devices used in new energy vehicles, photovoltaic inverters, rail transit, UHV power grids and 5G communications is increasing year by year. In the near future, silicon carbide single crystal materials will become one of the most important electronic materials. [0003] The most commonly used method for growing SiC single crystals is Physical Vapor Transport (PVT), which involves placing high-purity SiC powder and seed crystals on the bottom and top of a graphite crucible, respectively, and heating t...

AI Technical Summary

Problems solved by technology

The traditional PVT method is affected by the uneven gas phase transmission in the process of growing silicon carbide single crystal, so that the interface of the grown silicon carbide single crystal is mostly a convex interface, which will lead to the appearance of coarse steps, stacking faults, Inclusions of exotic polytypes and other defects

[0004] Therefore, the existing technology for preparing silicon carbide single crystal needs to be improved

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