Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Piezoresistive pressure sensor and preparation method thereof

A pressure sensor and piezoresistive technology, applied in the field of piezoresistive pressure sensor and its preparation, can solve the problems of high sensitivity of flat membrane structure, insufficient structural strength, poor resistance to vibration, etc., and achieve the improvement of insufficient strength, flexible style and sensitivity. improved effect

Pending Publication Date: 2022-03-01
SHENZHEN MEISI XIANRUI ELECTRONICS CO LTD
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] 1. The flat membrane structure has high sensitivity, but poor linearity;
[0006] 2. Insufficient structural strength and poor vibration resistance, not suitable for working conditions with heavy vibration and impact loads

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Piezoresistive pressure sensor and preparation method thereof
  • Piezoresistive pressure sensor and preparation method thereof
  • Piezoresistive pressure sensor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Such as Figure 1-5 As shown, the embodiment of the present invention is provided with a dielectric pressure sensor, including silicon strain films 1, a pressure sensitive resistor strip 2, a heavy doped contact zone 3, an electrode aperture 4, a metal lead 5, and a glass base 8. The silicon strain diaphragm 1 is a silicon wafer to form a silicon wafer to form a honeycomb structure after electrical etching and back etch etching, including four groups, respectively, respectively in silicon strain film 1, respectively. In the middle of the top layer, the metal lead 5 and the heavier contact zone 3 form ohmic contact through the electrode hole 4 on the front side of the silicon strain film 1, which is used for bonding silicon strain film 1.

[0043] Such as Figure 1-5 As shown, the silicon strain film 1 is an N-type silicon-on-insulator silicon wafer.

[0044] Further, the honeycomb structure includes a front groove and a back groove comprising a plurality of, uniformly arrang...

Embodiment 2

[0049] A method of preparing a MEMS dielectric pressure sensor, the steps include:

[0050] S1: Made in the front of the silicon-stranded diaphragm 1, a mutually connected varistor strip and a heavy doped contact area;

[0051] S2: Making lead holes and metal leads on the front surface of the silicon strain diaphragm;

[0052] S3: Ette the front groove in front of the silicon-strained diaphragm;

[0053] S4: etching the back groove corresponding to the front groove on the back photolithography of the silicon-strain diaphragm;

[0054] S5: Remove the back groove to a suitable size;

[0055]S6: The silicon-stranded diaphragm obtained by the honeycomb structure obtained by step S5 is bonded to a hole or a cavity of the glass base bonded to the pressure sensor.

[0056] Further, according to step S1, a pressure sensitive resistor strip and a heavily doped contact zone are produced by ion implantation.

[0057] Further, according to step S2, the metal lead is made of aluminum, chromium...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a piezoresistive pressure sensor and a preparation method thereof, the piezoresistive pressure sensor comprises a silicon strain diaphragm, a piezoresistor strip, a heavily doped contact region, an electrode hole, a metal lead and a glass base, the silicon strain diaphragm is a silicon wafer which is thinned to form a honeycomb structure on the front side and the back side after a silicon wafer is subjected to front side etching and back side etching; the four groups of piezoresistor strips are respectively positioned in the middle parts of four sides of the top layer of the silicon strain diaphragm, the metal leads and the heavily doped contact areas form ohmic contact on the front surface of the silicon strain diaphragm through the electrode holes, and the glass base is used for bonding the silicon strain diaphragm. The honeycomb structure can improve the linearity of the sensor while ensuring the sensitivity of the pressure sensor, can improve the problem of insufficient strength of a flat membrane structure, has excellent performance in the aspect of resisting vibration impact, can adjust the performance of the sensor by adjusting the shape, the number, the spacing and the depth of the grooves, and can improve the reliability of the sensor. Meanwhile, the device is suitable for different ranges.

Description

Technical field [0001] The present invention belongs to the technical field of MEMS pressure sensors, and more particularly to a dielectric pressure sensor and a preparation method thereof. Background technique [0002] The MEMS dielectric pressure sensor is based on the single crystal silicon pressure resistance to convert the external pressure to the corresponding electrical signal, and the measurement of the external pressure is achieved by four equivalent resistance components. MEMS piezoelectric pressure sensors are mainly used in industrial control, automotive electronics, consumer electronics, medical electronics and aerospace and other related fields. The MEMS dielectric pressure sensor is designed and processed by MEMS technology. The internal use of silicon film obtained by silicon wafer as a force sensitive element, four-to-equivalent resistance and low by doping, etching, and other MEMS processes. The interconnection of the resistance is composed of a multi-function l...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01L1/18
CPCG01L1/18
Inventor 许克宇武斌申涛
Owner SHENZHEN MEISI XIANRUI ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com