Magnetic random access memory architecture and manufacturing method thereof

Abstract

The invention provides a magnetic random access memory architecture and a manufacturing method thereof, and the structure of the magnetic random access memory architecture is that at least one of a source line of a memory and a contact point connected with a magnetic tunnel junction is formed through a self-alignment technology, so that the distance between the source line and a word line is effectively reduced, and the memory cell density of the magnetic random access memory architecture is further improved.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a magnetic random access memory structure and a manufacturing method thereof. Background technique [0002] MRAM (Magnetic random access memory, MRAM) is applied to the embedded memory structure, and the silicon chip area occupied per unit capacity is very small, which has a great advantage over SRAM; the number of additional masks required in its manufacturing process is small, compared with Embedded NOR Flash has a greater cost advantage. The performance of MRAM is also quite good, the read and write delay is close to that of SRAM, and the power consumption is much lower than that of flash memory. Moreover, MRAM is not compatible with standard CMOS semiconductor processes like DRAM and Flash. MRAM can be integrated into a chip with logic circuits. [0003] However, MRAM is still limited by the general CMOS process (logic process). CMOS design rules require a certain distance...

AI Technical Summary

Problems solved by technology

This rule also further prevents the miniaturization of memory cells

Images