Preparation method of high-Q-value single crystal film bulk acoustic resonator
A bulk acoustic wave resonator and single crystal thin film technology, applied in electrical components, impedance networks, etc., can solve problems such as high defect density and poor film quality, and achieve the effects of optimizing leakage, improving Q value, and reducing leakage
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Embodiment 1
[0043] A method for preparing a high-Q single crystal thin film bulk acoustic resonator, the specific steps are as follows:
[0044] (1) all use acetone and isopropanol to carry out ultrasonic washing to substrate 100 and base 108; The material of substrate and base is one or more in glass, silicon, silicon carbide, silicon nitride or ceramics Than combination.
[0045] (2) if figure 1 As shown, a metal organic compound chemical vapor deposition process (MOCVD) is used to deposit a peeling layer 114 on one side of the substrate 100; the material of the peeling layer 114 is GaN; Deposition by precipitation process) the piezoelectric layer 101 has a thickness of 10nm-4000nm.
[0046] (3) if figure 2 As shown, on the surface of one side of the substrate 108, the layer-109 to be bonded is deposited by low-pressure chemical vapor deposition (LPCVD), and the surface of the layer-109 to be bonded is smoothed by chemical mechanical polishing. The material of -109 is one of silico...
Embodiment 2
[0069] A method for preparing a high-Q single-crystal thin-film bulk acoustic resonator, based on steps (1) to (12) of Embodiment 1, the following steps are carried out:
[0070] (13) if Figure 17 As shown, metal is deposited on the surface of passivation layer 3 111 by thermal evaporation or magnetron sputtering, and patterned by plasma or wet etching to form an upper annular structure 115;
[0071] (14) if Figure 17 As shown, the piezoelectric layer 101 other than the upper electrode 110 is thinned by plasma etching or wet etching.
[0072] (15) if Figure 17 As shown, a through hole is formed on the piezoelectric layer 101 by using a plasma etching or wet etching process; the through hole runs through the lower electrode 102 and the passivation layer 112, and the bottom opens on the surface of the sacrificial layer 105; the diameter of the through hole is 5um- Take the value within the range of 50um. Then, the sacrificial layer 105 is removed by using a wet etching pr...
Embodiment 3
[0074] In this embodiment, a method for preparing a high-Q single crystal thin-film bulk acoustic resonator, such as Figure 18 As shown, the difference from Example 1 is that step (5) only forms the lower annular structure 103, and does not form the lower annular structure 104; step (6) only deposits the passivation layer 1 112 and the lower electrode 102 on the surface of the lower electrode 102. A passivation layer 2 113 is deposited on the surface of the ring structure 1 103 ; step (7) the sacrificial layer 105 wraps the passivation layer 2 113 and the lower ring structure 1 103 .
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