Preparation method of diamond self-supporting film and diamond self-supporting film
A self-supporting film and diamond technology, applied in the field of diamond, can solve the problems of uneven grain size, uneven areal density, small size of diamond self-supporting film, etc., to achieve complete crystal morphology, uniform areal density, and improve utilization. Effect
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[0042] see figure 1 , a method for preparing a diamond self-supporting film provided in an embodiment of the present invention, comprising the following steps:
[0043] (1) The protective layer 20 is grown on the substrate 10 such that the protective layer 20 is grown on at least the circumferential side surface 101 of the substrate 10 .
[0044] In step (1), the substrate 10 has a peripheral side 101 , an upper surface 102 and a lower surface 103 , the peripheral side 101 extends from the edge of the lower surface 103 to the upper surface 102 and connects with the edge of the upper surface 102 .
[0045] Exemplarily, see figure 2 , when the shape of the base material 10 is a cylinder, the circumferential side 101 of the base material 10 is the side of the cylinder; when the shape of the base material 10 is a cuboid, the circumferential side 101 of the base material 10 is the four sides of the cuboid ; When the substrate 10 is a triangular prism, the peripheral side 101 of ...
Embodiment 1
[0098] A preparation method of diamond self-supporting film, such as image 3 As shown, the specific steps are as follows:
[0099] (1) Provide a cylindrical Si substrate 10 with a roughness Ra of 1 μm, a diameter d and a thickness δ of 120 mm and 5 mm, respectively.
[0100] (2) Growth thickness δ 0 800nm SiO 2 For the protective layer 20, the specific method is to oxidize the surface of the Si substrate 10 by using a silicon thermal oxidation process.
[0101] (3) The SiO on the upper surface 102 of the Si substrate 10 is removed by HF etching with a mass fraction of 15% 2 Floor.
[0102](4) Perform pretreatment on the upper surface 102 of the Si substrate 10 to form the diamond crystal nucleus 30 on the upper surface 102 of the Si substrate 10 . The specific method is that diamond powder with a particle size of 5 μm is mixed with ethanol to prepare a suspension with a concentration of 200 mg / L, and the formed suspension is ultrasonically treated on the upper surface ...
Embodiment 2
[0115] A preparation method of diamond self-supporting film, such as Figure 4 As shown, the specific steps are as follows:
[0116] (1) Provide a cuboid Si substrate 10 with a roughness Ra of 3 μm, a length L, a width W, and a thickness δ of 150 mm, 130 mm, and 8 mm, respectively.
[0117] (2) The thickness δ is grown on the upper surface 102 of the Si substrate 10 by magnetron sputtering deposition method 1 The C layer 201 is 2 μm, and the width W of the C layer 201 on the upper surface 102 of the Si substrate 10 is 50 μm.
[0118] (3) Using the magnetron sputtering deposition method to grow a thickness δ on the upper surface of the C layer 201 2 The metal layer 202 is 2 μm, the grown metal layer 202 is a Ni layer, and the width W of the metal layer 202 on the upper surface of the C layer 201 is 50 μm.
[0119] (4) Perform pretreatment on the upper surface 102 of the Si substrate 10 to form the diamond crystal nucleus 30 on the upper surface 102 of the Si substrate 10 . ...
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