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Gallium arsenide solar cell with gradient tunnel junction and manufacturing method of gallium arsenide solar cell

A technology for solar cells and manufacturing methods, which is applied to circuits, photovoltaic power generation, electrical components, etc., can solve the problems of reducing the current density of solar cells, reducing the crystal quality of top cells, and narrowing the production process window, so as to reduce light absorption capacity and improve tunneling. Penetration ability, the effect of improving crystal quality

Active Publication Date: 2022-04-12
NANCHANG KAIXUN PHOTOELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For N-GaAs / P-GaAs tunneling junction, the fabrication method is simple, but there will be light absorption phenomenon, which reduces the current density of solar cells; for N-GaInP / P-AlGaAs, the structure has high tunneling current and light transmission, which is the Currently the most used structure in commercialization, but the problem with this structure is that when AlGaAs is grown on GaInP, P / As will diffuse, and the production process window is narrow. If the control is not good, it is easy to reduce the crystal quality of the top cell. invalidate the product

Method used

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  • Gallium arsenide solar cell with gradient tunnel junction and manufacturing method of gallium arsenide solar cell

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Embodiment 1

[0047] A gallium arsenide solar cell with a graded tunnel junction, from bottom to top is Ge substrate, bottom cell, buffer layer, first tunnel junction, DBR, middle cell, second tunnel junction, top cell and A capping layer; wherein, the first tunnel junction and the second tunnel junction have the same structure, and both adopt a graded tunnel junction structure.

[0048] The specific manufacturing method of the gallium arsenide solar cell is as follows:

[0049] S1. On a P-type Ge substrate, pass PH at high temperature 3 In the form of diffusion, the emitter region of the bottom cell is formed, and then the GaInP nucleation layer is grown, and the nucleation layer serves as the window layer of the bottom cell at the same time;

[0050] S2. Then grow In on the bottom cell 0.01 GaAs buffer layer, where In 0.01 GaAs buffer layer thickness is 0.1μm;

[0051] S3. Then grow a first tunnel junction on the buffer layer, the first tunnel junction is N ++ Al x1 Ga y1 InP / P ++...

Embodiment 2

[0058] A gallium arsenide solar cell with a graded tunnel junction, from bottom to top is Ge substrate, bottom cell, buffer layer, first tunnel junction, DBR, middle cell, second tunnel junction, top cell and A capping layer; wherein, the first tunnel junction and the second tunnel junction have the same structure, and both adopt a graded tunnel junction structure.

[0059] The specific manufacturing method of the gallium arsenide solar cell is as follows:

[0060] S1. On a P-type Ge substrate, pass PH at high temperature 3 In the form of diffusion, the emitter region of the bottom cell is formed, and then the GaInP nucleation layer is grown, and the nucleation layer serves as the window layer of the bottom cell at the same time;

[0061] S2. Then grow In on the bottom cell 0.01 GaAs buffer layer, where In 0.01 GaAs buffer layer thickness is 0.5μm;

[0062] S3. Then grow a first tunnel junction on the buffer layer, the first tunnel junction is N ++ Al x1 Ga y1 InP / P ++...

Embodiment 3

[0069] A gallium arsenide solar cell with a graded tunnel junction, from bottom to top is Ge substrate, bottom cell, buffer layer, first tunnel junction, DBR, middle cell, second tunnel junction, top cell and A capping layer; wherein, the first tunnel junction and the second tunnel junction have the same structure, and both adopt a graded tunnel junction structure.

[0070] The specific manufacturing method of the gallium arsenide solar cell is as follows:

[0071] S1. On a P-type Ge substrate, pass PH at high temperature 3 In the form of diffusion, the emitter region of the bottom cell is formed, and then the GaInP nucleation layer is grown, and the nucleation layer serves as the window layer of the bottom cell at the same time;

[0072] S2. Then grow In on the bottom cell 0.01 GaAs buffer layer, where In 0.01 GaAs buffer layer thickness is 0.8μm;

[0073] S3. Then grow a first tunnel junction on the buffer layer, the first tunnel junction is N ++ Al x1 Ga y1 InP / P ++...

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Abstract

The invention relates to the technical field of gallium arsenide solar cells, in particular to a gallium arsenide solar cell with a gradient tunnel junction and a manufacturing method thereof, and the cell sequentially comprises a Ge substrate, a bottom cell, a buffer layer, a first tunnel junction, a DBR, a middle cell, a second tunnel junction, a top cell and a cap layer from bottom to top; the first tunnel junction and the second tunnel junction are the same in structure and both adopt a gradient tunnel junction structure N < + > + Al < x > < 1 > Ga < y > < 1 > InP / P < + > + Al < x > < 2 > Ga < y > < 2 > As, the range of x1 and y1 is 0-0.51, the range of x2 is 0-0.5, and the range of y2 is 0.5-1. The solar cell provided by the invention adopts a gradually-changed tunnel junction structure, so that the tunneling capability of the tunnel junction can be improved, the voltage drop at two sides of the tunnel junction can be reduced, the light absorption capability of the tunnel junction can be reduced, the current density of the solar cell can be improved, the crystal quality of a tunnel junction interface can be improved, and the stability of a solar cell product can be improved.

Description

technical field [0001] The invention relates to the technical field of gallium arsenide solar cells, in particular to a gallium arsenide solar cell with a graded tunnel junction and a manufacturing method thereof. Background technique [0002] Due to the advantages of high conversion efficiency, strong radiation resistance and small temperature coefficient, triple-junction gallium arsenide solar cells are widely used in various aerospace equipment to provide continuous energy supply for these equipment. The triple-junction GaAs solar cell is composed of top, middle and bottom three-junction sub-cells connected in series through a tunnel junction. The tunneling performance of the tunnel junction will directly affect the performance of the triple-junction GaAs solar cell. Currently commonly used tunnel junctions generally adopt N-GaAs / P-GaAs or N-GaInP / P-AlGaAs structures. For N-GaAs / P-GaAs tunneling junction, the fabrication method is simple, but there will be light absorpti...

Claims

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Application Information

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IPC IPC(8): H01L31/0352H01L31/0687H01L31/18
CPCY02P70/50
Inventor 徐培强李俊承林晓珊潘彬王向武
Owner NANCHANG KAIXUN PHOTOELECTRIC CO LTD
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