SiC/GaN MOSFET drive circuit and integrated circuit

A driving circuit and circuit technology, applied in the direction of high-efficiency power electronic conversion, electrical components, adjusting electric variables, etc., can solve the problems of negative voltage turn-off peaks, voltage instability, etc. The effect of turning off the negative voltage and turning on to keep the voltage stable

Active Publication Date: 2022-05-10
湖南北顺源智能科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] The embodiment of the present invention provides a magnetically isolated SiC/GaN MOSFET drive circuit, aiming to solve the prob

Method used

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  • SiC/GaN MOSFET drive circuit and integrated circuit
  • SiC/GaN MOSFET drive circuit and integrated circuit
  • SiC/GaN MOSFET drive circuit and integrated circuit

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0077] like figure 1 As shown, this embodiment provides a magnetically isolated SiC / GaN MOSFET drive circuit, including an isolation transformer, a first leading-edge pulse turn-on circuit, a second leading-edge pulse turn-on circuit, a first trailing-edge pulse turn-off circuit, a second trailing-edge pulse Pulse turn-off circuit, clamp buffer circuit, pulse front and rear edge generation circuit and SiC / GaN MOSFET;

[0078] The input end of the first leading edge pulse turn-on circuit and the input end of the first trailing edge pulse turn-off circuit are respectively connected to one end of the secondary side of the isolation transformer;

[0079] The input end of the second leading edge pulse turn-on circuit and the input end of the second trailing edge pulse turn-off circuit are respectively connected to the other end of the secondary side of the isolation transformer;

[0080] One end of the clamp buffer circuit is connected to the output end of the first leading edge ...

Embodiment 2

[0109] like Figure 7 As shown, the above secondary side PWM drive signal shaping circuit includes an isolation transformer T1, a first switching tube Q1, a second switching tube Q2 and a driven SiC / GaN switching tube Q3, the first switching tube Q1 and the second switching tube Q2 are both It is a P-channel MOS tube, and the third switching tube Q3 is an N-channel MOS tube; the first diode D1, the second diode D2, the third diode D3, the fourth diode D4, and the fifth and second diodes Diode D5, the sixth diode D6, the seventh diode D7, the eighth diode D8, the ninth diode D9, wherein the first diode D1, the second diode D2, the third and the second The pole diode D3, the fourth diode D4, and the seventh diode D7 are Schottky diodes, and the fifth diode D5, the ninth diode D9, and the eighth diode D8 are respectively the first switching tube Q1 , the body diodes of the second switching tube Q2 and the SiC / GaN switching tube Q3, the sixth diode D6 is a Zener diode; the first ...

Embodiment 3

[0116] like Figure 8 As shown, a secondary side PWM drive signal shaping circuit can adjust the turn-on and turn-off voltage values ​​of the driven SiC / GaN switch, including the isolation transformer T1, the first switch Q1, the second switch Q2 and the driven SiC / GaN switch tube Q3, the first switch tube Q1 and the second switch tube Q2 are N-channel MOS tubes; the first diode D1, the second diode D2, the third diode D3, and the fourth diode Tube D4, fifth diode D5, sixth diode D6, seventh diode D7, eighth diode D8, ninth diode D9, wherein the first diode D1, the second diode The tube D2, the third diode D3, and the fourth diode D4 are Schottky diodes, and the fifth diode D5, the ninth diode D9, and the eighth diode D8 are respectively the second switching tubes Q2, The body diodes of the first switching tube Q1 and the SiC / GaN switching tube Q3, the sixth diode D6 is a Zener diode, and the seventh diode D7 is a Zener diode; the first resistor R1, the second resistor R2, t...

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PUM

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Abstract

The invention provides a SiC/GaN MOSFET drive circuit and an integrated circuit. The SiC/GaN MOSFET drive circuit comprises an isolation transformer, a first leading edge pulse turn-on circuit, a second leading edge pulse turn-on circuit, a first trailing edge pulse turn-off circuit, a second trailing edge pulse turn-off circuit, a clamping buffer circuit, a pulse leading and trailing edge generation circuit and a SiC/GaN MOSFET. The input end of the first leading edge pulse turn-on circuit and the input end of the first trailing edge pulse turn-off circuit are connected with one end of the secondary side of the isolation transformer. The input ends of the second leading edge pulse turn-on circuit and the second trailing edge pulse turn-off circuit are respectively connected with the other end of the secondary side of the isolation transformer; one end of the clamping buffer circuit is connected with the output end of the first leading edge pulse turn-on circuit and the output end of the first trailing edge pulse turn-off circuit. According to the invention, the effect of keeping the stable voltage when the secondary SiC/GaN MOSFET of the isolation transformer is switched on is realized, and the stable clamping turn-off negative voltage can be kept.

Description

technical field [0001] The invention belongs to the technical field of pulse modulation, and in particular relates to a SiC / GaN MOSFET driving circuit and an integrated circuit. Background technique [0002] Silicon carbide (SiC) and gallium nitride (GaN), as the third-generation semiconductors, have gradually highlighted a variety of advantages. Compared with the previous two generations of semiconductor materials, they have wider band gap, higher operating voltage, and higher heat dissipation. Conductivity, higher radiation resistance, higher switching frequency and lower loss, very suitable for high-voltage, high-temperature, high-frequency, radiation-resistant and high-power devices. [0003] Compared with traditional Si MOSFETs, SiC / GaN MOSFETs are easier to work in high frequency and high voltage applications, and the driving threshold voltage of SiC / GaN MOSFETs is lower, so the driving circuit is required to turn off SiC / GaN MOSFETs under negative pressure to prevent ...

Claims

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Application Information

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IPC IPC(8): H02M1/088H02M1/34H02M3/335
CPCH02M1/088H02M1/34H02M3/33576H02M3/33523Y02B70/10
Inventor 宁勇张秀卫漆俊赵振兴徐刚徐毛邓彭建伟
Owner 湖南北顺源智能科技有限公司
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