Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

SiC single crystal substrate and preparation method and application thereof

A single crystal and substrate technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of complex preparation process and high cost of SiC substrate preparation, simplify the preparation process and improve the efficiency of material preparation , the effect of increasing the qualified rate of growth

Active Publication Date: 2022-05-13
SHANDONG UNIV
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the need to use high-energy-density lasers in this method, the preparation cost of SiC substrates with high conductivity and high porosity is relatively high and the preparation process is complicated.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • SiC single crystal substrate and preparation method and application thereof
  • SiC single crystal substrate and preparation method and application thereof
  • SiC single crystal substrate and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0066] The preparation process with better effect, the steps are as follows:

[0067] - Furnace loading: place the SiC source material at the bottom of the growth crucible, place the SiC seed crystal on the top of the crucible, and place the growth crucible in the growth chamber;

[0068] -Chamber pretreatment: use a vacuum pump to evacuate the growth chamber;

[0069] - Nucleation on the surface of the seed crystal: a certain amount of carrier gas is introduced into the growth chamber to maintain a certain pressure in the reaction chamber, and a heating device is used to increase the temperature in the reaction chamber and stabilize it for a period of time, and the SiC seed crystal is pretreated to make the SiC seed crystal The growth surface decomposes to obtain a porous silicon carbide seed crystal template;

[0070] -Single crystal growth: using a heating device to continue to increase the temperature in the growth chamber to the growth temperature, and establish a certai...

Embodiment 1

[0079] A method for preparing a high-conductivity, high-porosity n-type SiC single crystal substrate, specifically comprising the following steps:

[0080] - Furnace loading: Place SiC source material with a C / Si ratio of 1:1 at the bottom of the growth crucible, and place a Dummy-grade 4-inch 4H-SiC seed crystal on the top of the crucible, and place the growth crucible in the growth chamber.

[0081] -Chamber pretreatment: Use a vacuum pump to evacuate the growth chamber to 0.1Pa to remove air and moisture in the reaction chamber.

[0082] - Nucleation on the surface of the seed crystal: 1000 SCCM of high-purity N is passed into the growth chamber 2 , to maintain a pressure of 800mbar in the reaction chamber, and use a medium-frequency induction heating power supply to increase the temperature in the reaction chamber to 2100°C and stabilize it for 2h to pretreat the SiC seed crystal. 2 The high partial pressure leads to the formation of dense micropipes on the surface of the...

Embodiment 2

[0090] A method for preparing a high-conductivity, high-porosity p-type SiC single crystal substrate, specifically comprising the following steps:

[0091] -Furnace loading: SiC source material and Al doping source with a C / Si ratio of 1:1 are placed at the bottom of the growth crucible, wherein the Al doping source accounts for 30% of the mass fraction of the SiC material, and 60% of it is Al doping The source is placed in the high temperature zone of the powder. A commercially available Dummy-grade 2-inch 6H-SiC seed crystal was placed on the top of the crucible, and the growth crucible was placed in the growth chamber.

[0092] -Chamber pretreatment: Use a vacuum pump to evacuate the growth chamber to 0.01Pa to remove air and moisture in the reaction chamber.

[0093] -Nucleation on the surface of the seed crystal: 500SCCM of Ar is introduced into the growth chamber to maintain a pressure of 200mbar in the reaction chamber, and the temperature in the reaction chamber is ra...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
porosityaaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention belongs to the technical field of new materials and crystal growth, and relates to a SiC single crystal substrate and a preparation method and application thereof. The preparation method comprises the following steps: a SiC source material and a SiC seed crystal are arranged in a growth crucible, the SiC seed crystal is located above the SiC source material, then the growth crucible is placed under a vacuum condition, carrier gas is introduced, then heating is performed, seed crystal surface nucleation treatment and single crystal growth treatment are performed in sequence, and cooling is performed; wherein the ratio of C to Si of the SiC source material is (0.5-0.8): 1 or (1.2-1.5): 1; or in the carrier gas atmosphere for seed crystal surface nucleation treatment, the volume of the nitrogen is not less than 50% of the volume of the carrier gas; or a p-type dopant is added into the SiC source material. The SiC single crystal substrate component prepared by the method has high conductivity and high porosity, and is simple to operate and easy for industrial production.

Description

technical field [0001] The invention belongs to the field of new material technology and crystal growth technology, and relates to a SiC single crystal substrate and its preparation method and application. Background technique [0002] The information disclosed in this background section is only intended to increase the understanding of the general background of the present invention, and is not necessarily taken as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to those skilled in the art. [0003] According to the research of the inventors, when SiC materials are used as electrode materials for electrocatalysis and / or energy storage systems, SiC materials are required to satisfy the characteristics of high electrical conductivity and high porosity at the same time. High conductivity ensures a large carrier concentration in SiC materials. High conductivity SiC materials are usually achieved by doping a large number o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/00C30B29/36
CPCC30B25/00C30B29/36
Inventor 谢雪健徐现刚王守志陈秀芳彭燕杨祥龙胡小波
Owner SHANDONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com