GaN HEMTs and top-layer hydrogen terminal diamond MOSFETs integrated structure and preparation method thereof

Abstract

The invention discloses a GaN HEMTs and top hydrogen terminal diamond MOSFETs integrated structure and a preparation method thereof, and the method comprises the steps: providing an epitaxial product, and growing a SiN dielectric layer and a diamond layer on an AlGaN barrier layer; after part of the diamond layer is removed through etching, a source electrode groove and a drain electrode groove are etched in the SiN dielectric layer, and a first source electrode and a first drain electrode of the HEMT device are manufactured; hydrogen terminal processing is carried out on the diamond layer, and a second source electrode and a second drain electrode of the MOSFET device are manufactured on hydrogen terminal diamond; depositing Al2O3 on the hydrogen terminal diamond to form a gate dielectric layer; manufacturing a first gate electrode of the HEMT device on the SiN dielectric layer; and manufacturing a second gate electrode of the MOSFET device on the gate dielectric layer. Heterogeneous integration of the n-type GaN HEMT and the p-type diamond MOSFET is achieved, the size of the device is reduced, the integration degree is improved, and a solution is provided for high-temperature CMOS application. And meanwhile, the heat generation distribution of the GaN HEMTs is modulated, and the heat dissipation capability of the device is improved.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to an integrated structure of GaN HEMTs and top-layer hydrogen-terminated diamond MOSFETs and a preparation method thereof. Background technique [0002] In recent years, the third-generation semiconductor material GaN has the advantages of wide bandgap, high breakdown electric field, and high electron saturation velocity, so it has unique advantages in high-frequency and high-power fields such as military, aerospace, and communications. However, when ultra-high integration of semiconductor devices and GaN-based devices are used in high-frequency fields, the accompanying high heat generation phenomenon cannot be ignored. The accumulation of self-heating effects of devices will not only reduce the basic performance of devices such as saturation current and transconductance, but also In severe cases, the device may fail. [0003] The thermal conductivity of GaN its...

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Problems solved by technology

Among them, even if the SiC substrate with high thermal conductivity is used, its heat dissipation performance is far from meeting the application of GaN effect tubes in the microwave high-power field.

In addition, the current maximum operating temperature of silicon-based MOSFET devices in logic circuits is 125°C. The electrical performance of silicon-based devices exceeding this operating temperature will be greatly degraded or even completely invalid, while the operating temperature of devices used in high-frequency and high-power fields is much higher. at 125°C

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