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Laser enhanced ultrasonic electrolysis combined machining method and device for preparing array holes in semiconductor material

A processing device and semiconductor technology, applied in electric processing equipment, sustainable manufacturing/processing, manufacturing tools, etc., can solve problems such as difficulty in processing large depth-diameter ratio deep holes, achieve small macroscopic forces, improve speed, and thermal impact small effect

Pending Publication Date: 2022-05-24
JIANGSU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the specific characteristics of thermal diffusion and electrolytic stray corrosion, it is difficult to process deep holes with large depth-to-diameter ratio.

Method used

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  • Laser enhanced ultrasonic electrolysis combined machining method and device for preparing array holes in semiconductor material
  • Laser enhanced ultrasonic electrolysis combined machining method and device for preparing array holes in semiconductor material
  • Laser enhanced ultrasonic electrolysis combined machining method and device for preparing array holes in semiconductor material

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Embodiment Construction

[0031] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0032]In describing the present invention, it is to be understood that the terms "central", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "axial", The orientation or positional relationship indicated by "radial", "vertical", "horizontal", "inner", "outer", etc. is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present invention and simplifying the description , rather than indicating or implying that the device or eleme...

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PUM

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Abstract

The invention discloses a laser enhanced ultrasonic electrolysis combined machining method and device for preparing array holes in a semiconductor material, and belongs to the technical field of non-traditional machining. An ultrasonic machining head is used for driving suspended micro-abrasive particles in electrolyte to impact the semiconductor material through high-frequency vibration so as to remove the material at a specified position; and meanwhile, the ultrasonic machining head serves as a cathode to conduct electrolytic machining on the semiconductor material, and ultrasonic-electrolytic localized combined machining is achieved. According to the method, the micropore structure is rapidly machined on the back face of the workpiece through ultrasonic vibration, abrasive particles, electrochemistry and laser. The device is used for achieving the method, and the machining system is complete in function and easy to assemble and achieve. The designed cathode and anode position adjusting device is simple in structure and easy to install and maintain.

Description

technical field [0001] The invention relates to the field of semiconductor material processing in special processing technology, in particular to a laser-enhanced ultrasonic electrolysis composite processing method and device for preparing array holes on semiconductor materials. Background technique [0002] Semiconductor materials represented by silicon and germanium have been widely used in integrated circuits, solar cells, large-scale optical devices, micro-electromechanical systems and other fields. requirements. Taking integrated circuit manufacturing as an example, through-silicon via technology (TSV) is a new technical solution for the interconnection of stacked chips in three-dimensional integrated circuits. The shortest line, the smallest size, and greatly improved chip speed and low power consumption have become the most eye-catching technology in electronic packaging technology. Through-hole processing on the wafer is the core of TSV technology. Currently, there...

Claims

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Application Information

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IPC IPC(8): B23H5/08B23H11/00
CPCB23H5/08B23H11/00Y02P70/50
Inventor 朱浩王超杜文武张敏其他发明人请求不公开姓名
Owner JIANGSU UNIV
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