Preparation method of high-resolution structural color device

A technology with high resolution and structural color, which is applied to the photolithographic process of patterned surface, photolithographic process coating equipment, instruments, etc., can solve the problem that the photoresist distribution uniformity and quality cannot be further improved by spin coating and drying efficiency. and other problems, to achieve the effect of improving spin coating drying efficiency, high saturation, and high resolution

Pending Publication Date: 2022-05-24
JIANGSU TRANSIMAGE TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a preparation method of a high-resolution structural color device, which is used to solve the problem that the display quality of the structural color cannot be further improved through active regulation

Method used

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  • Preparation method of high-resolution structural color device
  • Preparation method of high-resolution structural color device
  • Preparation method of high-resolution structural color device

Examples

Experimental program
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Example Embodiment

[0038] Example 1

[0039] The present embodiment provides a method for preparing a high-resolution structural color device, comprising the following steps:

[0040] S1, depositing a phase change material on the substrate, and annealing to obtain a substrate with a film layer of the phase change material; wherein, the material of the substrate is selected from one of silicon, silicon dioxide, silicon carbide, silicon nitride, and sapphire or A variety of mixtures; the phase change material is selected from vanadium dioxide; the magnetron sputtering deposition method is used for deposition, the target material selected for the magnetron sputtering deposition method is a metal target, the sputtering power is 112W, the pressure is 6.8mTorr, and the growth temperature is 605°C; annealing was carried out in an annealing furnace under an argon / hydrogen atmosphere, the annealing temperature was 446°C, the annealing time was 4.2 hours, and the flow rates of argon and hydrogen were 78 s...

Example Embodiment

[0044] Example 2

[0045] The present embodiment provides a method for preparing a high-resolution structural color device, comprising the following steps:

[0046] S1, depositing a phase change material on the substrate, and annealing to obtain a substrate with a film layer of the phase change material; wherein, the material of the substrate is selected from one of silicon, silicon dioxide, silicon carbide, silicon nitride, and sapphire or A variety of mixtures; the phase change material is selected from vanadium dioxide; the magnetron sputtering deposition method is used for deposition, the target material selected for the magnetron sputtering deposition method is a metal target, the sputtering power is 115W, the pressure is 6.8mTorr, and the growth temperature is 608°C; annealing was carried out in an annealing furnace under an argon / hydrogen atmosphere, the annealing temperature was 450°C, the annealing time was 4.6 hours, and the flow rates of argon and hydrogen were 80 s...

Example Embodiment

[0050] Example 3

[0051] The present embodiment provides a method for preparing a high-resolution structural color device, comprising the following steps:

[0052] S1, depositing a phase change material on the substrate, and annealing to obtain a substrate with a film layer of the phase change material; wherein, the material of the substrate is selected from one of silicon, silicon dioxide, silicon carbide, silicon nitride, and sapphire or A variety of mixtures; the phase change material is selected from vanadium dioxide; the magnetron sputtering deposition method is used for deposition, the target material selected for the magnetron sputtering deposition method is a metal target, the sputtering power is 120W, the pressure is 7.6mTorr, and the growth temperature is 608°C; annealing using an annealing furnace in an argon / hydrogen atmosphere, the annealing temperature is 452°C, the annealing time is 4.8 hours, and the flow rates of argon and hydrogen are 82 sccm and 5 sccm, res...

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Abstract

The invention discloses a preparation method of a high-resolution structural color device, and relates to the technical field of structural color devices. The preparation method comprises the following steps: firstly, depositing a phase change material on a substrate, and annealing to obtain a substrate with a phase change material film layer; spin-coating photoresist on the upper surface of the phase change material film layer through spin-coating, trimming and drying equipment, drying, trimming, transferring a preset metasurface reverse structure pattern to the photoresist, and developing and exposing to obtain a metasurface structure pattern; a metal film is deposited on the metasurface structure pattern, and a mask structure is obtained through desolvation; and etching the mask structure, and removing the residual metal mask material to obtain the high-resolution structural color device with the metasurface structure. High-resolution, high-saturation and wide-color-gamut color display of the structural color device is achieved, the structural color display quality of the metasurface is improved, and the metasurface is not prone to being damaged and falling off; the method is suitable for the technical fields of multifunctional display, CMOS image sensors, ink-free color printing, information encryption and the like.

Description

technical field [0001] The invention relates to the technical field of structural color devices, in particular to a preparation method of a high-resolution structural color device. Background technique [0002] At present, the existing research on structural color devices at home and abroad focuses on improving the saturation, efficiency and wide viewing angle of structural color devices, which can only provide static colors, that is, once the device structure is fabricated, the resulting color will remain unchanged, which cannot satisfy Current requirements for color display technology. At present, the nanophotonic structures used to realize the generation of structural colors mainly include two categories: thin film structures based on thin film interference and grating structures based on guided wave resonance modes. A widely adopted thin-film structure consists of a Fabry-Perot resonant cavity based on a metal-dielectric-metal three-layer thin film. The working mode of...

Claims

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Application Information

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IPC IPC(8): G02B5/18G03F7/00G03F7/16
CPCG02B5/1857G03F7/0005G03F7/162G03F7/168
Inventor 邹伟民岳文静刘林邹嘉逸
Owner JIANGSU TRANSIMAGE TECH CO LTD
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