Multi-cavity PVD-RTA mixed film deposition system

A PVD-RTA, thin film deposition technology, applied in the field of ion sputtering deposition system, can solve the problem of not being able to give full play to the role of RTA, reduce equipment use and maintenance costs, reduce temperature requirements, and improve the effect of thin film crystal structure

Pending Publication Date: 2022-05-31

浙江艾微普科技有限公司

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AI-Extracted Technical Summary

Problems solved by technology

[0011] However, the existing RTA is an independent annealing equipment for process operation under atmospheric pressure or protective gas; and it is not connecte...

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Method used

1) usually lower electrode layer is made of Ti/Pt two-layer thin film, and Ti can improve Pt and SiO well The binding force of/Si wafer 6, simultaneously, because the reason of thin film interlayer diffusion, Ti can pass through diffusion To the surface of Pt, improve the crystallization of PZT film, Ti also plays an important role in the process of controlling the ratio of Pb/(Zr+Ti); usually, the ratio of Ti/Pt is between 0.02-0.17 to assist PZT to form perovskite Mine (Perovskite) structure. The main role of Pt lies in its chemical stability, excellent electrical conductivity and crystal lattice parameters similar to PZT, which help PZT form a perovskite (Perovskite) structure.

3. The second wafer table 331 is used to carry the wafer 6, and there is a reflector 335 u...

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Abstract

The invention discloses a multi-cavity PVD-RTA (Physical Vapor Deposition-Resin Transfer Analysis) mixed thin film deposition system, which comprises a transport cavity, an RTA (Resin Transfer Angle) and a control system, the uploading cavity is arranged beside the transportation cavity, a first vacuum valve is arranged between the uploading cavity and the transportation cavity, and a third vacuum valve is directly arranged between the uploading cavity and the outside; the process cavity comprises a thin film deposition cavity, an etching cavity and a vacuum rapid annealing cavity which are distributed beside the transport cavity, and a second vacuum valve is arranged between the process cavity and the transport cavity. PVD and RTA are combined, so that the thin film deposition, etching and heat treatment processes of the wafer are all in vacuum, and the wafer does not need to be in contact with the atmosphere, and therefore, the production efficiency is greatly improved, and the production cost is reduced. Not only is the process efficiency improved, but also the performance and quality of the film are improved.

Application Domain

Polycrystalline material growthAfter-treatment details +6

Technology Topic

Thin membranePhysical vapor deposition +4

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Examples

Experimental program(1)

Example Embodiment

Referring to Fig. 1 to Fig. 6, the embodiment of the multi-chamber PVD-RTA hybrid film deposition system of the present invention is further explained

The device or element must have a specific orientation, be constructed and operated in a specific orientation, and should not be construed as limiting the specific warranty of the present invention.

One or more of the features, in the description of the present invention, "several" and "several" mean two or more, unless otherwise

Fig. 1 is the structural representation of multi-chamber PVD-RTA hybrid film deposition system of the present invention;

[0048] The transport cavity 1 is provided with a manipulator 11 inside;

[0049] The loading cavity 2 is arranged beside the transport cavity 1, and is provided with a first vacuum valve between the transport cavity 1, and

[0050] The process chamber includes a thin film deposition chamber 31, an etching chamber 32 and a vacuum fast chamber distributed beside the transport chamber 1

In this embodiment, all cavities are connected with a vacuum pump, and each cavity can be pumped to a vacuum state by the vacuum pump

The body has five, and the five process chambers include a vacuum rapid annealing chamber 33, an etching chamber 32 and three thin film deposition chambers.

The wafer 6 is transported to the transport chamber 1. After the second vacuum valve is opened, the robot arm 11 that has loaded the wafer 6 extends into the process.

[0054] As shown in FIG. 2, it shows the structure of the thin film deposition chamber 31, specifically:

1. The film deposition chamber 31 has a first vacuum suction port 315, which is connected to a vacuum pump through the first vacuum suction port 315

2. Meanwhile, the thin film deposition chamber 31 has at least one process gas inlet 314 for introducing process gas,

3. The first wafer stage 311 is used to carry the wafer 6, and the first wafer stage 311 can be heated and cooled according to specific needs.

4. The target 312 is typically connected to an external power source, which can be direct current (DC), radio frequency (RF), alternating current (AC), pulse

Tube 313, magnetron 313 is generally composed of permanent magnet material and soft iron, which can indicate the formation of a magnetic field on the target 312 and control the target 312

[0060] As shown in FIG. 3, it shows the structure of the vacuum rapid annealing chamber 33, specifically:

1. The vacuum rapid annealing chamber 33 has a second vacuum suction port 337, which is connected to a vacuum forming device such as a vacuum pump

2. Meanwhile, the vacuum rapid annealing chamber 33 has at least one gas inlet 338 for introducing gas, usually argon,

3. The second wafer stage 331 is used to carry the wafer 6, and there is a reflector 335 under the wafer 6, which is used for reflecting the heating lamp to generate

4. There is a transparent quartz window 333 above the second wafer stage 331, which is sealed with the vacuum rapid annealing chamber 33 to form

5. Above the quartz window 333, there is an infrared heating element 332 (infrared heating lamp), and after it is powered on, it forms a photothermal

6. There is also a reflective plate 335 on the back of the quartz window 333 for reflecting the heat generated by the infrared heating element 332 to improve the

7. Usually, there is a water cooling device 334, which surrounds the infrared heating element 332 and the back of the reflector 335 above it to further

8. Usually, an infrared thermometer 336 is installed to measure the temperature of the surface of the wafer 6, and it is fed back to the computer control system,

Also includes utilizing this system to carry out the method for growing PZT piezoelectric thin film, usually adopts Si/SiO Wafer 6 as raw material [0069]

As shown in Figure 4, method is as follows:

[0083] 2) The robotic arm 11 takes out the wafer 6 on which the deposition process has been completed from the piezoelectric layer deposition chamber, and sends it to the RTA chamber.

S2: deposit lower electrode layer, adopt DC magnetron sputtering in Ti deposition cavity, wafer is heated to between 300-400 ℃, Ti

Similar crystal lattice parameters to PZT, which help PZT to form a perovskite (Perovskite) structure.

2) DC magnetron sputtering is usually used, the substrate is heated to between 300-400°C, typically 400°C, and the thickness of Ti is

S3. deposit buffer layer:

[0076] 1) The buffer layer is usually composed of thin film materials such as SrRuO3, PbTiO3, La0.7Sr0.3MnO, IrO2, and TiOx. slow

[0077] 2) RF sputtering is usually employed. The manipulator 11 takes out the crystal that has completed the lower electrode deposition process from the Pt deposition chamber.

S4. deposition piezoelectric layer:

1) The composition of the piezoelectric layer target 312 is usually Pb(Zr0.52Ti0.48)O3, and the Pd content is usually increased by 0-10%, to

[0083] 2) The robotic arm 11 takes out the wafer 6 on which the deposition process has been completed from the piezoelectric layer deposition chamber, and sends it to the RTA chamber.

S5. vacuum rapid thermal annealing:

1) vacuum RTA process under PVD-RTA mixing system, can improve the performance and productivity of thin film, help to form

[0083] 2) The robotic arm 11 takes out the wafer 6 on which the deposition process has been completed from the piezoelectric layer deposition chamber, and sends it to the RTA chamber.

[0084] (1) The heating rate is usually 2-100°C/s; the typical heating rate is 20-30°C/s.

It undergoes the process of heating, isothermal temperature and cooling, wherein the heating rate is 2‑100℃/S, the isothermal time is between 30‑600S, and the cooling

(3) when cooling, also can pass into argon gas to assist to improve cooling rate, and argon gas pressure is usually between 0-500mTorr

[0087] RTA may comprise one or more elevated, isothermal processes. As shown in Fig. 5, the wafer 6 is heated from room temperature at 25°C/sec

6. Deposit upper electrode layer:

[0089] 1) Usually the upper electrode layer is Pt, which has excellent chemical stability and electrical conductivity.

[0090] 2) Usually DC magnetron sputtering is used. The robot 11 then takes the wafer 6 out of the RTA chamber and sends it to the Pt deposition chamber.

7. Download wafer 6:

The wafer 6 is transported to the transport chamber 1. After the second vacuum valve is opened, the robot arm 11 that has loaded the wafer 6 extends into the process.

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Description & Claims & Application Information

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Classification and recommendation of technical efficacy words

Improve quality and performance
Improve process efficiency

Multi-cavity PVD-RTA mixed film deposition system

AI-Extracted Technical Summary

Problems solved by technology

Method used

Abstract

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Examples

Example Embodiment

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Description & Claims & Application Information

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