Multi-cavity PVD-RTA mixed film deposition system

A PVD-RTA, thin film deposition technology, applied in the field of ion sputtering deposition system, can solve the problem of not being able to give full play to the role of RTA, reduce equipment use and maintenance costs, reduce temperature requirements, and improve the effect of thin film crystal structure

Pending Publication Date: 2022-05-31
浙江艾微普科技有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] However, the existing RTA is an independent annealing equipment for process operation under atmospheric pressure or protective gas; and it is not connecte

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Multi-cavity PVD-RTA mixed film deposition system
  • Multi-cavity PVD-RTA mixed film deposition system
  • Multi-cavity PVD-RTA mixed film deposition system

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

Referring to Fig. 1 to Fig. 6, the embodiment of the multi-chamber PVD-RTA hybrid film deposition system of the present invention is further explained

The device or element must have a specific orientation, be constructed and operated in a specific orientation, and should not be construed as limiting the specific warranty of the present invention.

One or more of the features, in the description of the present invention, "several" and "several" mean two or more, unless otherwise

Fig. 1 is the structural representation of multi-chamber PVD-RTA hybrid film deposition system of the present invention;

[0048] The transport cavity 1 is provided with a manipulator 11 inside;

[0049] The loading cavity 2 is arranged beside the transport cavity 1, and is provided with a first vacuum valve between the transport cavity 1, and

[0050] The process chamber includes a thin film deposition chamber 31, an etching chamber 32 and a vacuum fast chamber distributed beside the transport chamber...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a multi-cavity PVD-RTA (Physical Vapor Deposition-Resin Transfer Analysis) mixed thin film deposition system, which comprises a transport cavity, an RTA (Resin Transfer Angle) and a control system, the uploading cavity is arranged beside the transportation cavity, a first vacuum valve is arranged between the uploading cavity and the transportation cavity, and a third vacuum valve is directly arranged between the uploading cavity and the outside; the process cavity comprises a thin film deposition cavity, an etching cavity and a vacuum rapid annealing cavity which are distributed beside the transport cavity, and a second vacuum valve is arranged between the process cavity and the transport cavity. PVD and RTA are combined, so that the thin film deposition, etching and heat treatment processes of the wafer are all in vacuum, and the wafer does not need to be in contact with the atmosphere, and therefore, the production efficiency is greatly improved, and the production cost is reduced. Not only is the process efficiency improved, but also the performance and quality of the film are improved.

Description

technical field [0001] The invention belongs to the technical field of ion sputtering deposition systems, and more specifically relates to a multi-cavity PVD-RTA hybrid thin film deposition system. Background technique [0002] Lead zirconate titanate Pb(Zr 0.53 Ti 0.47 )O 3 (PZT) piezoelectric thin films have a wide range of applications, 5G communications, personal voice assistants, consumer wearable devices, fingerprint recognition, and medical equipment are all applications of piezoelectric devices. [0003] PZT piezoelectric film is the key technology for MEMS sensors and actuators. At present, the use of semiconductor technology (including MEMS technology) to prepare PZT piezoelectric thin films can make devices miniaturized, highly integrated, low cost, lower power consumption and higher performance to meet the massive demand for consumer products such as smartphones. [0004] Magnetron sputtering technology and equipment are the basic technology and equipment of ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23C14/08C23C14/58C23C14/56C23C14/35C23C14/18C30B29/32C30B25/02C30B33/02C30B33/08
CPCC23C14/088C23C14/5806C23C14/566C23C14/568C23C14/35C23C14/5873C23C14/185C30B29/32C30B25/02C30B33/02C30B33/08Y02P70/50
Inventor 唐云俊王昱翔
Owner 浙江艾微普科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products