Photoelectric integrated device and preparation method

Abstract

The invention discloses a photoelectric integrated device and a manufacturing method thereof, and the device comprises a plurality of basic units which are arranged in order, and each basic unit comprises a multi-quantum well MicroLED and a vertical structure GaN MOSFET; the top layer of the sapphire substrate is provided with a bonding dielectric layer, and the bottom layer of the sapphire substrate is a light emitting surface of the device; the multi-quantum well Micro LED is arranged on the top layer of the bonding dielectric layer; the GaN MOSFET with the vertical structure is arranged above the multi-quantum well Micro LED, and a drain region of the GaN MOSFET with the vertical structure is connected in series with an N region of the multi-quantum well Micro LED through a shared diode N-GaN structure layer; the light-emitting device and the driving electronic device are manufactured on the same chip, batch manufacturing can be achieved through an existing GaN process platform, the production cost is reduced, and the light-emitting device and the driving electronic device have the remarkable advantages of being small in size, high in speed and high in reliability. The GaN MOSFET adopts a novel vertical structure design, so that the channel length of a driving transistor can be greatly shortened, and the GaN MOSFET has important significance in improving the performance and the integration level of an integrated device.

Description

technical field [0001] The invention relates to an optoelectronic integrated device and a preparation method, belonging to the technical field of integrated optoelectronics. Background technique [0002] The band gaps of III-V semiconductors GaN and its alloys cover the spectral range from infrared to visible light, and have achieved great success in solid-state lighting, displays, high-density storage, and underwater communications. At the same time, GaN-based transistor technology has also received attention from the industry in recent years, and has developed rapidly, showing attractive application prospects in high-power and high-frequency devices. At present, the research of GaN in optoelectronic technology and electronic technology is independent of each other, and in practical applications, optoelectronic technology is inseparable and interdependent with electronic technology. For example, GaN light-emitting diodes (LEDs) must be driven by electronic transistor circui...

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide an optoelectronic integrated device and its preparation method, so as to solve the defect that the existing electronic transistor circuits are all based on the silicon-based platform and have a large volume.

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