Light emitting diode epitaxial structure with N-type current expansion layer

Abstract

The invention discloses a light-emitting diode epitaxial structure with an N-type current expansion layer structure, which comprises a substrate, a buffer layer, a U-type semiconductor layer, an N-type semiconductor layer, an active layer and a P-type semiconductor layer which are grown on a lower lug, and is characterized in that the N-type semiconductor layer comprises a first N-type semiconductor layer, an N-type current expansion layer and a second N-type semiconductor layer which are grown from bottom to top; the N-type current expansion layer comprises a Si-lightly-doped Al < x > Ga < 1-x > N layer, a Si-overly-doped N-type GaN layer and a Si-lightly-doped Al < x > In < y > Ga < 1-x-y > N / GaN superlattice layer which grow from bottom to top. By adding the Al < x > Ga < 1-x > N layer lightly doped with Si, the flowing direction of electrons is restrained by the barrier effect of the high energy level of Al in the layer, and transverse expansion of the electrons is promoted. The problems that when an N-type semiconductor layer serves as a chip electrode, current expansion is insufficient, voltage is too high, and electric leakage is too large are solved. And the effects of increasing current expansion and reducing voltage are achieved.

Description

Technical field [0001] The invention involves the field of semiconductor lighting, and specially involves a light -emitting diode and its preparation methods with a new composite electronic blocking layer. Background technique [0002] Due to the advantages of enhancing energy conservation and environmental protection, dexterous design, long life and other advantages, it has developed rapidly in recent years.In particular, the success of the III-V nitride Semiconductor LED technology in the field of blue light directly promoted LED lighting into millions of households.The structure of the existing technology light -emitting diode chip is: substrate, buffer layer, U semiconductor, N -type semiconductor, source layer and P -shaped semiconductor that grow from the bottom to the bottom.Under the effect of adding an electric field, the electron and the empty cave are compounded, but when the current flows from the N electrode to the P electrode, the current will be closer.The distribu...

AI Technical Summary

Problems solved by technology

Under the action of an external electric field, electrons and holes recombine, but when the current flows from the N electrode to the P electrode, it will be biased towards a closer route, which will cause a part of the current density to be too large, thereby forming a "current crowding" phenomenon, and the current distribution of the entire epitaxial layer Unevenness, resulting in high forward working voltage and low luminous efficiency of LED

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