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Polymer and forming method of micro pattern using the same

A polymer and graphic technology, which is applied in the photoengraving process of the pattern surface, photosensitive materials and instruments for opto-mechanical equipment, etc. It can solve the problems of high energy and damage to the lens of the exposure device, and achieve the effect of preventing damage.

Inactive Publication Date: 2004-04-21
HYUNDAI ELECTRONICS IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When using KrF light source, due to the high energy of KrF light, the lens of the exposurer can be damaged

Method used

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  • Polymer and forming method of micro pattern using the same
  • Polymer and forming method of micro pattern using the same
  • Polymer and forming method of micro pattern using the same

Examples

Experimental program
Comparison scheme
Effect test

preparation Embodiment 1

[0101] Synthesis of Poly(N-ethylmaleimide / tert-butyl 5-norbornene-2-carboxylate / (2-hydroxy)ethyl 5-norbornene-2-carboxylate) polymer

[0102] [Formula 5]

[0103]

[0104] N-ethylmaleimide (1mol), tert-butyl 5-norbornene-2-carboxylate (0.5mol) and (2-hydroxyl) ethyl 5-norbornene-2-carboxylate ( 0.5mol) was dissolved in 50-300 grams of tetrahydrofuran (THF), and then 2-15 grams of 2,2'-azobisisobutyronitrile (AIBN) was added thereto, and the resulting solution was heated in a nitrogen atmosphere at 60-70 The reaction was carried out at a temperature between ℃ for 10 hours. After the reaction gave high molecular weight, the resulting product was precipitated with ether or hexane solvent. The collected precipitate was dried to obtain the desired poly(N-ethylmaleimide / 5-norbornene-2-carboxylic acid tert-butyl ester / 5-norbornene-2-carboxylic acid (2- hydroxy) ethyl ester) polymer in about 85% yield. The NMR spectrum of the polymer is as figure 2 shown.

preparation Embodiment 2

[0106] Synthesis of Poly(N-propylmaleimide / tert-butyl 5-norbornene-2-carboxylate / (3-hydroxy)propyl 5-norbornene-2-carboxylate) polymer

[0107] [Formula 6]

[0108]

[0109] N-propylmaleimide (1mol), tert-butyl 5-norbornene-2-carboxylate (0.5mol) and (3-hydroxy)propyl 5-norbornene-2-carboxylate ( 0.5mol) was dissolved in 50-300 grams of tetrahydrofuran (THF), and then 2-15 grams of 2,2'-azobisisobutyronitrile (AIBN) was added thereto, and the resulting solution was heated in a nitrogen atmosphere at 60-70 The reaction was carried out at a temperature between ℃ for 10 hours. After the reaction gave high molecular weight, the resulting product was precipitated with ether or hexane solvent. The collected precipitate was dried to obtain the desired poly(N-propylmaleimide / 5-norbornene-2-carboxylic acid tert-butyl ester / 5-norbornene-2-carboxylic acid (3- hydroxy)propyl ester) polymer in about 82% yield. The NMR spectrum of the polymer is as image 3 shown.

preparation Embodiment 3

[0111] Poly(N-tert-butylmaleimide / bicyclo[2,2,2]oct-5-ene-2-carboxylic acid tert-butyl ester / 5-norbornene-2-carboxylic acid (2-hydroxy) Ethyl ester) polymer synthesis

[0112] [Formula 7]

[0113]

[0114] N-tert-butylmaleimide (1mol), bicyclo[2,2,2]oct-5-ene-2-carboxylic acid tert-butyl ester (0.5mol) and 5-norbornene-2-carboxylate Acid (2-hydroxy) ethyl ester (0.5mol) is dissolved in 50-300 gram tetrahydrofuran (THF), then adds 2-15 gram 2 thereto, 2 '- azobisisobutyronitrile (AIBN), makes the obtained The solution was reacted at a temperature between 60-70° C. for 10 hours in a nitrogen atmosphere. After the reaction gave high molecular weight, the resulting product was precipitated with ether or hexane solvent. The collected precipitate was dried to give the desired poly(N-tert-butylmaleimide / bicyclo[2,2,2]oct-5-ene-2-carboxylic acid tert-butyl ester / 5-norbornyl (2-hydroxy)ethyl-ene-2-carboxylate) polymer in about 75% yield.

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Abstract

The present invention relates to a polymer represented by following Formula 1 and a method of forming a micro pattern using the same:wherein R1 is a C1-C10 straight- or branched-chain substituted alkyl group, or a benzyl group; R2 is C1-C10 primary, secondary or tertiary alcohol group; m and n independently represent a number from 1 to 3; and X, Y and Z are the respective polymerization ratios of the co-monomers.The photoresist polymer according to the present invention is suitable for forming an ultra-micro pattern such as used in 4 G or 16 G DRAM semiconductor devices using a light source such as ArF, an e-beam, EUV, or an ion-beam.

Description

technical field [0001] The present invention relates to polymers useful as photoresists in the lithography of fabricating semiconductor devices and methods of forming microscopic patterns using the polymers. In particular, the present invention relates to polymers in photoresist compositions useful for forming ultramicroscopic patterns using short-wave light sources such as KrF (248nm), ArF (193nm), E - Rays or ion rays are formed during the preparation of 4G and 16G DRAM semiconductor chips. The polymers of the present invention are particularly useful in the preparation of photoresist compositions utilizing silylation for top surface image (TSI) processing, or may be used in the preparation of monolayer photoresists. Background technique [0002] In the process of manufacturing semiconductor elements, photoresists are generally used in a fixed form to form patterns on semiconductor elements. In order to obtain the required photoresist pattern, the photoresist solution is...

Claims

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Application Information

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IPC IPC(8): H01L21/027C08F222/06C08F222/40C08F232/04C08F232/08G03F7/004G03F7/038G03F7/039G03F7/38
CPCC08F232/04G03F7/0045G03F7/039C08F222/40G03F7/38C08F222/402C08F222/06
Inventor 郑载昌卢致亨卜喆圭金明洙李根守白基镐金亨基郑旼镐
Owner HYUNDAI ELECTRONICS IND CO LTD
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