Quantum dot light emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as poor device performance, increased transmission difficulty, and energy level differences

Pending Publication Date: 2022-06-28
TCL CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when metal oxides are used as electron transport layer materials and quantum dot materials to prepare devices, there are differences in energy levels between them, and good ohmic contacts are not formed at their interfaces, which makes charge carriers in the electron transport layer The difficulty of transmission with the light-emitting layer increases, resulting in poor performance and low stability of the device

Method used

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  • Quantum dot light emitting diode and preparation method thereof
  • Quantum dot light emitting diode and preparation method thereof
  • Quantum dot light emitting diode and preparation method thereof

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Embodiment 2

[0073] The preparation steps of the quantum dot light-emitting diode of the present embodiment are as follows:

[0074] 1) First clean the ITO glass, wipe the ITO surface with a cotton swab dipped in a small amount of soapy water to remove visible impurities on the surface, then ultrasonically clean with deionized water, acetone, ethanol, and isopropanol for 15 minutes, and then dry with nitrogen. stand-by.

[0075] 2), obtain solution A after mixing 5ml butyl titanate, 15ml ethanol and 2ml acetic acid, and obtain solution B after mixing 1ml water, 5ml ethanol and 0.1ml nitric acid; respectively, stir the two solutions of A and B for 2h, and make the solution Mix well; then slowly add solution B to solution A under stirring conditions, and stir for 1 h to obtain TiO 2 solution.

[0076] 3), suck 60 microliters of TFB toluene solution (concentration is 25mg / ml) with a pipette, drop it on the surface of the ITO glass, and then spin-coat at 3000rpm, the spin-coating time is con...

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Abstract

The invention discloses a quantum dot light emitting diode and a preparation method thereof, the quantum dot light emitting diode comprises a quantum dot layer, an electron transport layer adjacent to the quantum dot layer, and a lysine layer located between the quantum dot layer and the electron transport layer, and the electron transport layer comprises a metal oxide. According to the invention, the lysine layer is used as an interface modification layer to modify the interface of the electron transport layer and the quantum dot layer, so that the energy levels are better matched, the mobility of carriers is increased, the effective transmission of charges between the interfaces is improved, and the luminous efficiency and stability of the device are further improved; and moreover, due to the addition of lysine, the morphology at the interface can be improved to a certain extent, the interface can be flattened, and the luminous efficiency and the stability of the device are further improved.

Description

technical field [0001] The invention relates to the field of quantum dot devices, in particular to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diodes (QLEDs) have become the best candidates for next-generation display technologies due to their tunable wavelengths, high color saturation, high material stability, and low fabrication costs. The current structure of QLED includes a multi-layer structure such as anode, hole transport layer, quantum dot layer, electron transport layer and cathode. Among them, the electron transport layer plays an extremely important role in QLED. It not only forms an electron-selective contact with the quantum dot layer, improves the extraction efficiency of carriers, and acts as a carrier for electrons to flow to the cathode, but also acts as a blocking layer to block the backflow of holes to recombine with electrons, affecting the device efficiency. Electron tra...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K71/12H10K71/15H10K50/115H10K50/165
Inventor 黄盼宁芦子哲
Owner TCL CORPORATION
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