Formation method of semiconductor structure

Abstract

The invention discloses a method for forming a semiconductor structure. The method comprises the following steps of: forming source and drain layers in fin parts on two sides of a gate structure; forming a first side wall on the side wall of the gate structure, wherein the first side wall is also located on the side wall and the top surface of a part of the source-drain layer; a first protection layer and a mask layer located on the first protection layer are formed on the surface of the source-drain layer on the first region, and first doping ions are arranged in the first protection layer so that the first doping ions can be doped into the top surface of the source-drain layer on the first region; and injecting second doping ions into the top surface of the source drain layer on the second region by taking the mask layer as a mask. The first side wall can prevent the first doped ions or the second doped ions from entering the channel from the position where the grid electrode structure and the source drain layer are not tightly combined, the influence of the first doped ions or the second doped ions on the concentration of the doped ions in the channel is avoided, and the performance of the formed device is improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular, to a method for forming a semiconductor structure. Background technique [0002] In the existing semiconductor field, the fin field effect transistor (FinFET) is an emerging multi-gate device. Compared with the planar metal-oxide semiconductor field effect transistor (MOSFET), the fin field effect transistor has more It has strong short-channel suppression ability and stronger working current, and has been widely used in various semiconductor devices. [0003] With the continuous development of semiconductor technology, the gate size of fin field effect transistors is also continuously reduced. At this time, the distribution width of boron and phosphorus doping ions becomes an important factor affecting the short channel effect (SCE) of the fin field effect transistor. At the same time, the diffusion of boron and phosphorus doping ions caused by tr...

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Problems solved by technology

At the same time, the diffusion of boron and phosphorus dopant ions caused by transient enhanced diffusion (TED) not only affects the short channel effect, but also affects the transistor channel mobility, junction capacitance, and leakage performance.

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