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Ultra-clean cleaning method for GaAs wafer

An ultra-clean, wafer technology, applied in cleaning methods and utensils, cleaning methods using liquids, chemical instruments and methods, etc., can solve the problem of incomplete cleaning effect, roughening of the surface of gallium arsenide wafers, and difficulty of metal impurities on the wafer surface. Cleaning and other issues to achieve the effect of thorough cleaning

Pending Publication Date: 2022-07-08
BEIJING TONGMEI XTAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the prior art, the gallium arsenide wafer is mainly cleaned by ultrasonic heating with an organic solvent, but the inventors have found that the cleaning effect is not complete by using this method, which not only roughens the surface of the gallium arsenide wafer, but also roughens the surface of the wafer. Trace metal impurities are also difficult to wash thoroughly

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] An ultra-clean cleaning method for GaAs wafers, comprising the following steps:

[0038] S1. Clean with cleaning solution A containing cleaning agent A and water for 2 min. The volume ratio of cleaning agent A and water is 1:35, and cleaning agent A is composed of polyethyleneimine with a mass ratio of 1:6:1, surface active Mixing agent and solubilizer, the mass percentage concentration of polyethyleneimine is 25-30%;

[0039] S2, wash 60s with the cleaning solution B containing hydrogen peroxide, the cleaning solution B is obtained by mixing hydrogen peroxide and water with a mass ratio of 1:20, and the mass percentage concentration of the hydrogen peroxide is 25%;

[0040] S3. Clean for 30s with cleaning solution C containing cleaning agent C and water, the volume ratio of cleaning agent C to water is 1:30, and cleaning agent C is composed of polyethyleneimine and ethanol whose mass ratio is 1:5:0.8 Mixed with EDTA to obtain;

[0041] S4. Finally, the gallium arseni...

Embodiment 2

[0044] An ultra-clean cleaning method for GaAs wafers, comprising the following steps:

[0045] S1. Clean with cleaning solution A containing cleaning agent A and water for 3 min. The volume ratio of cleaning agent A and water is 1:50, and cleaning agent A is composed of polyethyleneimine with a mass ratio of 1:8:1.5, surface active It is obtained by mixing the agent and the solubilizer, and the mass percentage concentration of polyethyleneimine is 30%;

[0046] S2, wash 80s with the cleaning solution B containing hydrogen peroxide, the cleaning solution B is obtained by mixing hydrogen peroxide and water with a mass ratio of 1:30, and the mass percentage concentration of the hydrogen peroxide is 30%;

[0047]S3. Clean for 60s with a cleaning solution C containing cleaning agent C and water, the volume ratio of cleaning agent C to water is 1:40, and cleaning agent C is composed of polyethyleneimine and ethanol with a mass ratio of 1:6:1 Mixed with EDTA to obtain;

[0048] S4...

Embodiment 3

[0051] An ultra-clean cleaning method for GaAs wafers, comprising the following steps:

[0052] S1. Clean with cleaning solution A containing cleaning agent A and water for 5 min. The volume ratio of cleaning agent A and water is 1:70, and cleaning agent A is composed of polyethyleneimine with a mass ratio of 1:10:2, surface active It is obtained by mixing the agent and the solubilizer, and the mass percentage concentration of polyethyleneimine is 25-30%;

[0053] S2, wash 90s with cleaning solution B containing hydrogen peroxide, and cleaning solution B is obtained by mixing hydrogen peroxide and water with a mass ratio of 1:40, and the mass percentage concentration of hydrogen peroxide is 35%;

[0054] S3. Clean for 90s with a cleaning solution C containing cleaning agent C and water, the volume ratio of cleaning agent C to water is 1:50, and cleaning agent C is composed of polyethyleneimine and ethanol with a mass ratio of 1:7:1.5 Mixed with EDTA to obtain;

[0055] S4. F...

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PUM

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Abstract

The invention relates to the technical field of semiconductors, and particularly discloses a GaAs wafer ultra-clean cleaning method which comprises the following steps: S1, cleaning is performed by using a cleaning solution A containing a cleaning agent A and water, and the cleaning agent A comprises polyethyleneimine, a surfactant and a solubilizer; s2, cleaning with a cleaning solution B containing hydrogen peroxide; s3, cleaning by using a cleaning solution C containing a cleaning agent C and water, wherein the cleaning agent C comprises polyethyleneimine, ethanol and EDTA (Ethylene Diamine Tetraacetic Acid); and S4, finally washing the gallium arsenide wafer with water. According to the cleaning method, the gallium arsenide wafer can be better cleaned, and various metal impurities on the surface of the gallium arsenide wafer are effectively removed.

Description

technical field [0001] The present application relates to the field of semiconductor technology, and more particularly, to a method for ultra-clean cleaning of GaAs wafers. Background technique [0002] Gallium arsenide (GaAs) occupies an important position in the semiconductor industry and is widely used in the manufacture of various devices. As a compound semiconductor, it is widely used due to its high mobility and large band gap. [0003] GaAs wafer is a GaAs single crystal material synthesized from pure arsenic and gallium and obtained by crystal growth. It is made after cutting, grinding, polishing and cleaning. The surface contamination of GaAs will seriously affect semiconductor devices. Therefore, the cleaning process of GaAs wafers is very important for the quality of GaAs wafers. The requirements for the cleaning process of gallium arsenide wafers are to achieve the residual gallium oxide and arsenic oxide on the surface of the wafer and some metals, dirt, oil, ...

Claims

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Application Information

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IPC IPC(8): H01L21/02B08B3/08C11D1/825C11D3/20C11D3/33C11D3/37C11D3/39C11D3/60
CPCH01L21/02057B08B3/08C11D1/825C11D3/3773C11D3/33C11D3/201C11D3/3942C11D1/72C11D1/82Y02P70/50
Inventor 任殿胜王建利张华张帅
Owner BEIJING TONGMEI XTAL TECH CO LTD
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