Silicon-free high-temperature-resistant protective adhesive film and preparation method thereof

A high temperature resistant and adhesive film technology, applied in the direction of adhesives, polymer adhesive additives, film/sheet adhesives, etc., can solve the problems of film performance stability and mechanical properties that need to be further improved, to avoid Effects of silicon transfer, improvement of physical properties, and ease of operation

Pending Publication Date: 2022-07-12
苏州市新广益电子股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the film performance stability and mechanical properties need to be further improved

Method used

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  • Silicon-free high-temperature-resistant protective adhesive film and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] A silicon-free high temperature resistant protective adhesive film comprises a base material layer, an adhesive layer and a silicon-free release film layer in sequence from top to bottom; the base material layer is a polybenzimidazole film layer; the adhesive The layer is made of the following components in parts by weight: 30 parts of hyperbranched polybenzimidazoles whose end groups are amino groups, 5 parts of acetylated modified polyphenylene sulfide, 2,2-bis(3-amino- 4-hydroxyphenyl) hexafluoropropane 2 parts, titanate coupling agent 1 part, acetic acid 1 part, molecular sieve 3 parts, solvent 60 parts.

[0024] The titanate coupling agent is titanate coupling agent NXH-501; the molecular sieve is type 3A molecular sieve; the solvent is N,N-dimethylformamide; the silicon-free release film layer is Made of silicon-free release film RF3220.

[0025] A preparation method of the silicon-free high temperature resistant protective adhesive film, comprising the following...

Embodiment 2

[0027] A silicon-free high temperature resistant protective adhesive film comprises a base material layer, an adhesive layer and a silicon-free release film layer in sequence from top to bottom; the base material layer is a polybenzimidazole film layer; the adhesive The layer is made of the following components in parts by weight: 33 parts of hyperbranched polybenzimidazoles whose end groups are amino groups, 6 parts of acetylated modified polyphenylene sulfide, 2,2-bis(3-amino- 2.5 parts of 4-hydroxyphenyl) hexafluoropropane, 1.2 parts of titanate coupling agent, 1.3 parts of acetic acid, 3.5 parts of molecular sieves, and 65 parts of solvent.

[0028] The titanate coupling agent is titanate coupling agent 201; the molecular sieve is type 4A molecular sieve; the solvent is N,N-dimethylacetamide; the silicon-free release film layer is made of Any of silicon release film RF3220 and PET non-silicon release film GT-989.

[0029] Another object of the present invention is to prov...

Embodiment 3

[0031] A silicon-free high temperature resistant protective adhesive film comprises a base material layer, an adhesive layer and a silicon-free release film layer in sequence from top to bottom; the base material layer is a polybenzimidazole film layer; the adhesive The layer is made of the following components in parts by weight: 35 parts of hyperbranched polybenzimidazole with amino end groups, 7.5 parts of acetylated modified polyphenylene sulfide, 2,2-bis(3-amino- 4-hydroxyphenyl) hexafluoropropane 3 parts, titanate coupling agent 1.5 parts, acetic acid 1.5 parts, molecular sieve 4 parts, solvent 70 parts.

[0032] The titanate coupling agent is titanate coupling agent NXH-501; the molecular sieve is type 5A molecular sieve; the solvent is N-methylpyrrolidone; the silicon-free release film layer is made of PET non-silicon The release film is made of GT-989.

[0033] A preparation method of the silicon-free high temperature resistant protective adhesive film, comprising th...

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Abstract

The invention discloses a silicon-free high-temperature-resistant protective adhesive film which sequentially comprises a base material layer, an adhesive layer and a silicon-free release film layer from top to bottom, the base material layer is a polybenzimidazole film layer; the adhesive layer is prepared from the following components in parts by weight: 30 to 40 parts of hyperbranched polybenzimidazole with an amino terminal group, 5 to 10 parts of acetylated modified polyphenylene sulfide, 2 to 4 parts of 2, 2-bis (3-amino-4-hydroxyphenyl) hexafluoropropane, 1 to 2 parts of a titanate coupling agent, 1 to 2 parts of acetic acid, 3 to 5 parts of a molecular sieve and 60 to 80 parts of a solvent. The invention also discloses a preparation method of the silicon-free high-temperature-resistant protective adhesive film. The silicon-free high-temperature-resistant protective adhesive film disclosed by the invention is excellent in high-temperature resistance, good in thermal stability and mechanical property, high in roller peel strength and capable of effectively avoiding silicon transfer.

Description

technical field [0001] The invention relates to the technical field of adhesives, in particular to a silicon-free high temperature resistant protective adhesive film and a preparation method thereof. Background technique [0002] In recent years, the high-frequency and high-speed wireless communication industry represented by 5G mobile phones is promoting the rapid development of radio frequency circuits in the direction of flexibility, miniaturization, thinning, high performance and multi-functionality. The demand for flexible circuit boards has suddenly risen. The performance requirements of the protective film for masking in the flexible circuit board manufacturing process are also getting higher and higher. The ideal protective film used in the flexible circuit board manufacturing process needs to have the characteristics of good initial adhesion, high adhesion in long-term high-temperature process and acid-base process, and long service life. [0003] The traditional p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09J7/30C09J179/04C09J181/02C09J11/06C09J11/08C09J7/25
CPCC09J7/30C09J179/04C09J11/06C09J11/08C09J7/25C09J2301/122C08L2205/04C08L2201/08C08L81/02C08K5/18Y02E60/10
Inventor 李永胜高曦赵国钧
Owner 苏州市新广益电子股份有限公司
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