Monocrystalline silicon furnace for processing semiconductor raw material wafer

Abstract

The invention relates to a monocrystalline silicon furnace for semiconductor raw material wafer processing, which comprises a base, a furnace body is arranged above the base, damping mechanisms are arranged on both sides of the furnace body, a motor is arranged below the furnace body, the inner wall of the furnace body is fixedly connected with a heat preservation cylinder, and the top end of an output shaft of the motor penetrates through the bottom of the furnace body and is fixedly connected with a turntable; and heating mechanisms are arranged on the two sides of the heat preservation cylinder, pressure relief mechanisms are arranged on the two sides of the top of the heat preservation cylinder, and a furnace cover is installed on the top of the furnace body. According to the single crystal silicon furnace, automatic pressure relief can be achieved to guarantee air pressure balance in the heat preservation barrel, potential safety hazards caused by too large air pressure in the heat preservation barrel are avoided, the quartz crucible can be limited so that the stability of the quartz crucible can be improved, in addition, the damping effect on the furnace body can be achieved so that the working noise of the single crystal silicon furnace can be reduced, and the service life of the single crystal silicon furnace can be prolonged. And meanwhile, parts in the furnace body are effectively prevented from being damaged due to collision caused by vibration.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a single crystal silicon furnace used for processing semiconductor raw material wafers. Background technique [0002] Wafer refers to the silicon wafer used to make silicon semiconductor circuits, and its raw material is silicon. High-purity polysilicon is dissolved and mixed with silicon crystal seeds, which are then slowly pulled out to form cylindrical monocrystalline silicon. The silicon ingot is ground, polished and sliced ​​to form a silicon wafer, that is, a wafer. [0003] A single crystal silicon furnace is a manufacturing equipment for producing single crystal silicon by the Czochralski method. Most of the wafer production and processing are completed by a single crystal silicon furnace. Due to the structural design of the current monocrystalline silicon furnaces on the market, there is a lack of automatic pressure relief measures. When working for a long time,...

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Problems solved by technology

Due to structural design reasons, the current monocrystalline silicon furnaces on the market lack automatic pressure relief measures. After working for a long time, the internal air pressure is often too large. When the silicon furnace is used for the production and processing of single crystal silicon by the Czochralski method, the crucible is prone to shaking after rotation, so that there will be an offset between the center of the single crystal silicon melt in the crucible and the seed crystal, thereby affecting the quality of the single crystal silicon. The quality of the finished product. In addition, the existing monocrystalline silicon furnace is prone to large vibrations during the working process, which will not only make a huge noise, but also cause the parts in the furnace to collide and be damaged due to vibration.

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